• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.371-374
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• 2004

In this paper, Ni Germane-silicide formed on undoped $Si_{0.8}Ge_{0.2}$ as well as source/drain dopants doped $Si_{0.8}Ge_{0.2}$ was characterized by the four-point probe for sheet resistance. x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscope (FESEM). Low resistive NiSiGe is formed by one step RTP (Rapid thermal processing) with temperature range at $500{\~}700^{\circ}C$. To enhance the thermal stability of Ni Germane-silicide, Ni/Co/TiN structure with different Co concentration were studied in this work. Low sheet resistance was obtained by Ni/Co/TiN structure with high Co concentration using 2-step RTP and it almost keeps the same low sheet resistance even after furnace annealing at $650^{\circ}C$ for 30 min.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.48-56
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• 1999

In this paper, we have investigated experimentally the effects of initial oxygen concentration on oxygen pileup phenomenon and the diffusion of implanted impurities. 1.2 MeV $^{11}B^{+}$ and 2.2 MeV $^{31}P^{+}$ ions were implanted into p-type (100) Si wafers with a dose of 1${\times}10^{15}$ / $\textrm{cm}^2$. Secondary ion mass spectrometry(SIMS) measurements were carried out to obtain depth distribution profiles for implanted impurities and oxygen atoms after two-step annealing of $700^{\circ}C$(20 hours)+$1000^{\circ}C$(10 hours). Residual secondary defect distribution and annealing behabiour were also studied by cross-sectional transmission electron microscopy(TEM) observations. Oxygen pileup nearly $R_p$(projected range) were observed by SIMS measurements and considerable amount of residual secondary defect layer were observed by TEM observations. It can be seen that oxygen atoms are trapped at the secondary defects by the experimental results. Enhanced diffusions of boron and phosphorus to the bulk direction were observed with the increasing of initial oxygen concentration.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.150-150
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• 2010

질화물 기반의 LED의 경우 c-plane 사파이어에 GaN을 성장 하는 방법이 많이 연구되어 왔다. 그러나 c-plane 위에 성장시킨 LED는 분극현상이 발생하여 양자효율의 저하와 발광파장의 적색 편이를 야기한다[1]. 이런 문제를 해결하기 위하여 a-plane (11-20), m-plane (10-10) 등의 비극성면을 갖는 GaN을 성장을 통해 분극문제를 해결하고자 하는 방법이 제안되었다 [2] 하지만, 현재 비극성 면을 갖는 고품질의 박막을 성장시키기 어렵다는 단점이 존재한다. 고품질의 박막을 성장시키는 방법으로는 ELO와 다중 버퍼층의 사용처럼 여러가지 방법이 연구되고 있다. 하지만 사파이어의 tilt와 열처리에 따른 표면 개질에 대한 연구는 많이 진행되어지고 있지 않다. 본 연구에서는 사파이어에 열처리를 통하여 표면의 특성 변화를 관찰하고 이를 이용하여 고품위 GaN 박막의 품질을 높이려 하였다. r-plane 사파이어에 유기금속화학증착법(MOCVD)을 이용하여 a-plane GaN을 성장하였다. 이 공정에서 사용한 pre-treatment는off-axis angle을 가진 기판의 표면 열처리이다A-plane GaN 성장전에 m-direction으로 off-axis angle을 가진 r-plane 사파이어 기판을 1300도로 가열한 후 각각의 다른 시간에서 열처리를 진행하였다. Off-axis angle을 가진 사파이어는 표면에 step구조를 가지고 있으며, 이 step의 width를 비롯한 표면의 morphology는 off-axis angle에 따라 달라진다. Off-axis angle을 변화시킨 사파이어를 1300도에서 1시간, 3시간, 5시간 annealing하여 표면을 AFM을 사용하여 관측한 결과 step width가 증가하고 step의 형태가 뚜렷해지며 rms-roughness가 변화한 것을 관찰할 수 있었다. 그리고 이 각각의 기판을 동일한 조건으로 a-plane GaN을 성장하여 박막의 특성을 측정하였다. 본 발표에서는 사파이어 기판의 표면 처리에 따른 비극성 GaN의 특성 변화에 대한 분석 결과를 논의할 것이다.

• Bulletin of the Korean Chemical Society
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• v.34 no.7
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• pp.2067-2072
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• 2013

Hydrogen ($H_2$) treatment using a two-step $TiO_2$ nanotube (TONT) film was performed under various annealing temperatures from $350^{\circ}C$ to $550^{\circ}C$ and significantly influenced the extent of hydrogen treatment in the film. Compared with pure TONT films, the hydrogen-treated TONT (H:TONT) film showed substantial improvement of material features from structural, optical and electronic aspects. In particular, the extent of enhancement was remarkable with increasing annealing temperature. Light absorption by the H:TONT film extended toward the visible region, which was attributable to the formation of sub-band-gap states between the conduction and valence bands, resulting from oxygen vacancies due to the $H_2$ treatment. This increased donor concentration about 1.5 times higher and improved electrical conductivity of the TONT films. Based on these analyses and results, photoelectrochemical (PEC) performance was evaluated and showed that the H:TONT film prepared at $550^{\circ}C$ exhibited optimal PEC performance. Approximately twice higher photocurrent density of 0.967 $mA/cm^2$ at 0.32 V vs. NHE was achieved for the H:TONT film ($550^{\circ}C$) versus 0.43 $mA/cm^2$ for the pure TONT film. Moreover, the solar-to-hydrogen efficiency (STH, ${\eta}$) of the H:TONT film was 0.95%, whereas a 0.52% STH efficiency was acquired for the TONT film. These results demonstrate that hydrogen treatment of TONT film is a simple and effective tool to enhance PEC performance with modifying the properties of the original material.

• Journal of Magnetics
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• v.9 no.4
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• pp.101-104
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• 2004

The crystallization behaviours of nanocomposite made by a function of quenching rate (roller speed) were studied. The results showed that there was one step c$\mathbb{r}$ystallization process for the alloy quenched at roller speed of 32 m/s, which could be shown as, Am (amorphouse) + ${\alpha}-Fe/Nd_2Fe_{14}B$ ${\rightarrow}$ ${\alpha}-Fe/Nd_2Fe_{14}B$ . For the alloy quenched at roller speed of 40 m/s, there was steps crystallization process taking place at different temperatures, which could be shown as, Am ${\rightarrow}$ ${\alpha}-Fe/Nd_2Fe_{23}B_3+Nd_2Fe_{14}B+Am`$ ${\rightarrow}$ ${\alpha}-Fe/Nd_2Fe_{14}B$. The presence of transition phase ($Nd_2Fe_{23}B_3$) was harmful to get fine and uniform grain size during crystallization process. Uniform microstructures and high magnetic properties could be attained for the as-quenched alloy containing less amorphous phase and no presence of transition phase during annealing treatment. For the alloy prepared at roller speed of 32 m/s, the following properties were obtained, $B_r= 0.904 T,_iH_c = 801 kA/m, (BH)_{max} = 122 kJ/m^3 and M_r/M_s = 0.6$.

• Resources Recycling
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• v.9 no.2
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• pp.46-52
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• 2000

Aluminum can to can recycling was divided into two stpes. The first step was composed of the processes such as collection of used beverage cans (UBC), shredding, magnetic separation, De-laquiring, melting and casting. The second one was remelting and casting, heat treating, hot and cold rolling, annealing, and can making. In this study, the effect of alloying elements on the microstructure and texture of the secondary ingots made by Al UBC was investigated. In aluminum can to can recycling, the second phase particles appeared in the solidification stage must be controlled by heat treatment. The optimum heat treatment condition was $615^{\circ}C$ for 5hrs. the texture in hot rolled sheet was depressed with increasing Mn content, on the other hand, Si and Fe elements promoted the texture development. The textures of can-body sheet should be controlled in the hot rolling and annealing stage because can was formed from cold rolled sheet without heat treatment.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.19-23
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• 2009

We have studied dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was introduced with the flow rates from 24 sccm to 32 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. Then, SiOCH thin film deposited at room temperature was annealed at temperature of $400^{\circ}C$ and $500^{\circ}C$ for 30 minutes in vacuum. The vibrational groups of SiOCH thin films were analyzed by FT/IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. With the result that FTIR analysis, as BTMSM flow rate increase, relative carbon content of SiOCH thin film increased from 29.5% to 32.2%, and increased by 32.8% in 26 sccm specimen after $500^{\circ}C$ annealing. Dielectric constant was lowest by 2.32 in 26 sccm specimen, and decreased more by 2.05 after $500^{\circ}C$ annealing. Also, leakage current is lowest by $8.7{\times}10^{-9}A/cm^2$ in this specimen. In the result, shift phenomenon of chemical bond appeared in SiOCH thin film that BTMSM flow rate is deposited by 26 sccms, and relative carbon content was highest in this specimen and dielectric constant also was lowest value

• Progress in Superconductivity
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• v.3 no.2
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• pp.247-251
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• 2002

In general, the bubbling, generated during the fabrication of the tapes, breaks the superconducting filament, and critical current of the tapes will be decreased. Heat-treatment schemes of Bi-2223/Ag HTS tapes were modified, such as pre-annealing of multi-stacked billet, 2-step main sintering and ramp rate etc. The generation of bubbling was drastically decreased from 20 bubbles/m to 0 ~ 1 bubble/m by the modified heat-treatment. Therefore, the value of critical current of the tapes without bubbling was increased almost twice higher than that of already existing tapes. Critical current up to 42 A in 40 m length Bi-22231Ag tapes have been measured at 77K, self-field, 1$mutextrm{V}$/cm criterion. It could be confirmed that elimination of bubbling is effective to maintain the superconducting property along the tape length.

• Korean Journal of Microbiology
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• v.43 no.4
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• pp.264-272
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• 2007

For the detection of human immunodeficiency virus (HIV), ultra-rapid real-time PCR methods were developed. The target DNA sequences were used 495 bp HIV-1-specific env gene (gi_1184090) and 294 bp HIV-2-specific env gene (gi_1332355). Ultra-rapid real-time PCR was peformed by $Genspector^{TM}$ (Samsung, Korea) using microchip-based, $6\;{\mu}l$ of reaction volume with extremely short running time in only 2 steps (denaturation, annealing/extension) in each cycle of PCR. Total reaction for 30 cycled ultra-rapid PCR detection including melting temperature analysis was completed in 7 min and 30 sec. The HIV-1-specific 117 bp-long or HIV-2-spe-cific 119 bp-long PCR products were successfully amplified from the minimum of template, $2.3{\times}10^3$ copies of each euv gene using 30 cycled two-steps ultra-rapid PCR. This kind of ultra-rapid real-time PCR method would be useful not only for the rapid-detection of HIV, but also rapid-detection of other pathogens.

• Journal of Magnetics
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• v.11 no.2
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• pp.70-73
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• 2006

The magnetization angle and thickness dependence of magnetic anisotropy in the exchange-biased [Pd/Co]${\times}$5/FeMn multilayers with an out-of-plane anisotropy were investigated to determine the origin of perpendicular exchange biasing. As the Co thickness increased to 1.5 nm in the [Pd(0.8 nm)/Co(t)]${\times}$5/FeMn(120 nm) films, the hysteresis loops were converted from square loops at a thin Co (<0.4 nm) to complicated round ones at a thick Co. The irregularly asymmetric step (IAS) at the left top of the loop appeared in the loop of the 0.6-nm Co film due to an inhomogeneity in the exchange anisotropy. As the Pd thickness increased to 1.6 nm, the step disappeared, and the perpendicular magnetic anisotropy was maximized in the Co thickness between 0.6 and 0.9 nm. The conversion of the magnetization loop along the magnetization angle coincided with the equation $H_{(eff)}=H_o\;cos{\theta}$. The IAS of the 0.8-nm Pd film disappeared after thermal annealing up to $200^{\circ}C$ under an external magnetic field.