• Journal of the Korean Institute of Telematics and Electronics
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• v.4 no.2
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• pp.3-15
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• 1967

In the design of a portable Gamma-ray transistorized steel pipe thickness gauge, a pulse height discriminator and an anti-coincidence circuit could be eliminated by using a thin, less than 1/2inch, NaI(Tl) scintillation crystal in the detecting probe. This method could provide an economic design and fabrication of a gamma-ray back-scattering gauge allowing allmost the same accuracy and stability compared with the exsisting method. A gauge had been designed and fabricated with the above method and its accuracy was experimentall tested for the 200$^{\circ}C$ high temperature steel pipes. The result showed that the thermal drift was less than y percent which was acceptabel in the practical applications.

• Transactions of Materials Processing
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• v.16 no.1 s.91
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• pp.48-53
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• 2007

LCD-BLU(Liquid Crystal Display - Back Light Unit) consists of several optical sheets: LGP(Light Guiding Plate), light source and mold frame. The LGP of LCD-BLU is usually manufactured by etching process and forming numerous dots with $50{\mu}m$ in diameter on the surface. But the surface roughness of LGP with etched dots is very high, so there is much loss of light. In order to overcome the limit of current etched dot patterned LGP, optical pattern design with microlens of $50{\mu}m$ diameter was applied in the present study. The microlens pattern fabricated by modified LiGA with thermal reflow process was applied to the optical design of LGP and optical simulation was carried out to know tendency of microlens patterned LGP simultaneously. The attention was paid to the effects of different aspect ratio(i.e. $0.2\sim0.5$) of optical pattern conditions to the brightness distribution of BLU with microlens patterned LGP. Finally, high aspect ratio microlens patterned LGP showed superior results to the one made by low aspect ratio in average luminance.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.2
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• pp.51-55
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• 2015

The present research is focused on the effect of porous graphite what is influenced on the 4H-SiC crystal growth by PVT method. We expect that it produces more C-rich and a change of temperature gradient for polytype stability of 4H-SiC crystal as adding the porous graphite in the growth cell. The SiC seeds and high purity SiC source materials were placed on opposite side in a sealed graphite crucible which was surrounded by graphite insulator. The growth temperature was around $2100{\sim}2300^{\circ}C$ and the growth pressure was 10~30 Torr of an argon pressure with 5~15 % nitrogen. 2 inch $4^{\circ}$ off-axis 4H-SiC with C-face (000-1) was used as a seed material. The porous graphite plate was inserted on SiC powder source to produce a more C-rich for polytype stability of 4H-SiC crystal and uniform radial temperature gradient. While in case of the conventional crucible, various polytypes such as 6H-, 15R-SiC were observed on SiC wafers, only 4H-SiC polytype was observed on SiC wafers prepared in porous graphite inserted crucible. The defect level such as MP and EP density of SiC crystal grown in the conventional crucible was observed to be higher than that of porous graphite inserted crucible. The better crystal quality of SiC grown using porous graphite plate was also confirmed by rocking curve measurement and Raman spectra analysis.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.205-207
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• 2008

The new process for hybrid silicon thin film transistor (TFT) using DPSS laser has been developed for realizing both low-temperature poly-Si (LTPS) TFT and a-Si:H TFT on the same substrate as a backplane of active matrix liquid crystal display. LTPS TFTs are integrated on the peripheral area of the panel for gate driver integrated circuit and a-Si:H TFTs are used as a switching device for pixel in the active area. The technology has been developed based on the current a-Si:H TFT fabrication process without introducing ion-doping and activation process and the field effect mobility of $4{\sim}5\;cm^2/V{\cdot}s$ and $0.5\;cm^2/V{\cdot}s$ for each TFT was obtained. The low power consumption, high reliability, and low photosensitivity are realized compared with amorphous silicon gate driver circuit and are demonstrated on the 14.1 inch WXGA+ ($1440{\times}900$) LCD Panel.

• Transactions on Electrical and Electronic Materials
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• v.2 no.2
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• pp.26-31
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• 2001

This paper presents the electrochemical etch-stop characteristics of single-crystal Si(001) wafers in tetramethyl ammonium hydroxide(TMAH):isopropyl alcohol(IPA):pyrazine solutions. The addition of pyrazine to TMAH:IPA solutions increased the etch rate of (100) Si, thus the etching time required by the etch-stop process shortened. The current-voltage(I-V) characteristics of n- and p-type Si in TMAH:IPA:pyrazine solutions were obtained, respectively. Open circuit potential(OCP) and passivation potential(PP) of n- and p-type Si, respectively, were obtained and applied potential was selected between n- and p-type Si PPs. The electrochemical etch-stop method was used to fabricate 801 microdiaphragms of 20 ${\mu}{\textrm}{m}$ thickness on a 5-inch Si wafer. The average thickness of fabricated 801 microdiaphragms on one Si wafer was 20.03 ${\mu}{\textrm}{m}$ and the standard deviation was $\pm$0.26 ${\mu}{\textrm}{m}$. The Si surface of the etch-stopped microdiaphragm was extremely flat with no noticeable taper or nonuniformity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.123-126
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• 2005

Eye Glass Display (EGD) with microdisplay to realize the virtual display can make the large screen, so virtual image has been developed by using microdisplay panel. This paper shows study of low cost lens design and simulation for microdisplay system with 0.6"LCoS panel. Lens design optimized consider to spherical aberration, astigmatism, distortion, and chromatic aberration. Code V is used and it designed an aspheric lens about exit pupil 6mm, eye relief 20mm and 35 degree of field of view (FOV). With the application this aspheric lens to liquid crystal on silicon (LCOS) type's microdisplay, virtual image showed 50 inch at 2m. One side of the aspheric lens was constituted from diffractive optical element (DOE) for the improvement in a performance. It had less than 2.5% of distortion value and modulation transfer function in axial had 20% of resolution with 32 lp/mm spatial frequency. The optical system is suitable for display of 15.6 mm-diagonal with SVGA.

• Nuclear Engineering and Technology
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• v.38 no.7
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• pp.675-680
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• 2006

The neutron transmutation doping of silicon (NTD), as a method to produce a high quality semiconductor, utilizes the transmutation of a silicon element into phosphorus by neutron absorption in a silicon single crystal. In this paper, we present the design of a neutron screen for a 6' Si ingot irradiation in the NTD2 hole of HANARO. The goal of the design is to achieve an even flat axial distribution of the resistivity, or $Si^{30}(n,{\gamma})Si^{31}$ reaction rate, in the irradiated Si ingot. We used the MCNP4C code to simulate the neutron screen and to calculate the reaction rate distribution in the Si ingot. The fluctuations in the axial distribution were estimated to be within ${\pm}2.0%$ from the average for the final neutron screen design; thus, they satisfy the customers' requirement for uniform irradiation. On the other hand, we determined the optimal insertion depths of the Si ingots by varying the critical control rod position, which greatly affects the axial flux distribution.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.1
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• pp.9-13
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• 2018

In this work, we investigated the variation of optical characteristics with the thickness of bulk GaN grown by hydride vapor phase epitaxy(HVPE) to evaluate applicability as GaN substrates in fabrication of high-brightness optical devices and high-power devices. We fabricated 2-inch GaN substrates by using HVPE method of various thickness (0.4, 0.9, 1.5 mm) and characterized the optical property with the variation of defect density and the residual stress using chemical wet etching, Raman spectroscopy and photoluminescence. As a result, we confirmed the correlation of optical properties with GaN crystal thickness and applicability of high performance optical devices via fabrication of homoepitaxial substrate.

• Journal of Information Display
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• v.12 no.4
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• pp.167-171
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• 2011

The angular distribution of the luminance on each optical component of 40-inch light-emitting diode backlight was measured and studied, using the optical-simulation method. Several scattering functions were investigated as the reflection distribution function of the scattering dots printed on the bottom surface of the light guide plate (LGP). It was found that both the diffuse Lambertian and near-specular Gaussian scattering functions were necessary for the successful reproduction of the experimental angular distribution of the luminance. The optimization of the scattering parameters included in these scattering functions led to almost the same luminance distribution as that obtained from the experiment. This approach may be an effective way of indirectly estimating the reflection distribution function of the scattering dots of the LGP, which cannot be made accessible through any other experimental method.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.341-346
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• 2010

In this paper, anti-reflection coating was investigated for decreasing the reflection in visible range of 400~650 [nm] through four staked layers of $Si_xO_y$ and $Si_xN_y$ thin films prepared by reactive sputtering method. Si single crystal of 6 [inch] diameter was used as a sputtering target. Ar and $O_2$ gases were used as sputtering gases for reactive sputtering for the $Si_xO_y$ thin film, and Ar and $N_2$ gases were used for reactive sputtering for the $Si_xN_y$ thin film. DC pulse power of 1900 [W] was used for the reactive sputtering. Refractive index and deposition rate were 1.50 and 2.3 [nm/sec] for the $Si_xO_y$, and 1.94 and 1.8 [nm/sec] for the $Si_xN_y$ thin film, respectively. Considering the simulation of the four layer anti-reflection coating structure with the above mentioned films, the $Si_xO_y-Si_xN_y$ stacked four-layer structure was prepared. The reflection measurement result for that structure showed that a "W" shaped anti-reflection was obtained successfully with a reflection of 1.7 [%] at 550 [nm] region and a reflection of 1 [%] at 400~650 [nm] range.