• International Journal of Precision Engineering and Manufacturing
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• v.7 no.1
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• pp.51-56
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• 2006

A computer code was developed to simulate both the thermal stresses introduced during the post-filling stage and the in-plane deformation after ejection process by finite element method based on the plane stress theory. The computer simulation was applied to the mold design of a 2 inch light guide plate (LGP) for thin film transistor (TFT)-liquid crystal displays (LCD). With injection molding experiments based on the design of experiments (DOE) technique, the influences of the processing conditions in injection molding on brightness and uniformity of the LGP were investigated, and the optimal processing parameters were selected to increase the brightness and uniformity. The verification experiment showed that the brightness and uniformity of the LGP were increased dramatically under the selected optimal processing conditions.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.476-479
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• 2005

We developed a plastic bistable LCD based on the suspension of sub-micron ferroelectric particles in a cholesteric liquid crystal. 2.5 inch $160{\times}160$ pixel display with enhanced contrast and improved electro-optical characteristics was achieved. The display is extremely light and possesses good flexibility, demonstrating multifold bending in a radius about 1.5 cm.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.562-566
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• 2005

Toshiba Matsushita Display Technology (TMD) has firstly succeeded in mass production of OCB (Optically Compensated Bend) mode liquid crystal display panels which have excellent moving picture quality almost the same as CRT. We have newly developed 32 -inch diagonal HD ($1366{\times}768\;pixels$) panels using OCB mode and low temperature p-Si TFT (LTPS) array substrates. High performance of brightness of $600cd/m^2$ and contrast ratio of 600 : 1 was obtained by using pseudo-impulse driving method to insert a black period between continuous two frames, and also by using blinking backlight method. Furthermore, moving picture response time (MPRT) 6.5ms has been obtained by optimization of black insert driving and backlight blinking, without the great sacrifices of contrast ratio and luminance.

• Journal of the Korean Ceramic Society
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• v.40 no.11
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• pp.1047-1057
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• 2003

A sub-nanometer resolution Scanning Nonlinear Dielectric Microscope (SNDM) was developed for observing ferroelectric polarization. We also demonstrate that the resolution of SNDM is higher than that of a conventional piezo-response imaging. Secondly, we report new SNDM technique detecting higher nonlinear dielectric constants $\varepsilon$$\_$3333/ and $\varepsilon$$\_$33333/. Higher order nonlinear dielectric imaging provides higher lateral and depth resolution. Finally, the formation of artificial small inverted domain is reported to demonstrate that SNDM system is very useful as a nano-domain engineering tool. The nano-size domain dots were successfully formed in LiTaO$_3$ single crystal. This means that we can obtain a very high density ferroelectric data storage with the density above 1T-bits/inch$^2$.

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.73-80
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• 1996

The single crystal growth has been carried out with the newly designed 1-T HB(single temperature zone horizontal Bridgman) system for GaAs crystals of 2 inch diameter doped with Si, Zn or undoped. With this method, incidence probability of single crystallinity was shown to be 0.73. Lattice defects evaluated from EPD(etch pit density) measurement were in the range of 5,000-20,000/cm2, dependent upon the doping condition. For the undoped GaAs crystals, carrier concentrations from the Hall measurement were ∼1×1016/cm3 at the seed part, which were less than half the concentrations of double of triple temperature zone(2-T, 3-T) HB grown crystals. By the 1-T HB method, therefore, GaAs crystals can be grown successfully with better yield and higher purity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.4
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• pp.164-167
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• 2010

Bulk GaN single crystal with 1.5 mm thickness was successfully grown by hydride vapor phase epitaxy (HVPE) technique. Free-standing GaN substrates of $10{\times}10,\;15{\times}15$ mm size were fabricate after lift-off of sapphire substrate and their optical properties were characterized properties for device applications. X-ray diffraction patterns showed (002) and (004) peak, and the FWHM of the X-ray rocking curve (XRC) measurement in (002) was 98 arcsec. A sharp photoluminescence spectrum at 363 nm was observed and defect spectrum at visible range was not detected. The hexagonal-shaped etch-pits are formed on the GaN surface in $200^{\circ}C\;H_3PO_4$ at 5 minutes. The defect density calculated from observed etch-pits on surface was around $5{\times}10^6/cm^2$. This indicates that the fabricated GaN substrates can be used for applications in the field of optodevice, and high power electronics.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.829-833
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• 1996

Superconducting YBaCuO thin films were deposited on MgO (100) single crystal substrate by rf reactive sputtering method. Sputtering target was prepared by mixing the original powders of $Y_2O_3$, $BaCO_3$, and CuO at $830^{\circ}C$, and its composition was $YBa_2Cu_{3.3}O_x$ adding the excess CuO to compensate for the loss of Cu in the deposition process. The sputtering conditions for a high quality of YBCO thin film were: substrate temperature of 13$0^{\circ}C$; gas pressure of 10 mTorr; gas mixture ($O_2$: Ar =10: 90); distance of 2.5 inch; and rf power density of 4.87 W /$\textrm{cm}^2$. The deposition rate was 2.4~2.6 nm/min. From the RBS results, it was found that Cu and Ba contents in thin films decreased with the increase of substrate temperature. The increase of gas pressure resulted in significant deficiency of Ba elements.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.100-103
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• 2019

The change in vanadium amount according to the growth direction of vanadium-doped semi-insulated (SI) SiC single crystals using high-purity SiC powder was investigated. High-purity SiC powder and a porous graphite (PG) inner crucible were placed on opposite sides of SiC seed crystals. SI SiC crystals were grown on 2 inch 6H-SiC Si-face seeds at a temperature of $2,300^{\circ}C$ and growth pressure of 10~30 mbar of argon atmosphere, using the physical vapor transport (PVT) method. The sliced SiC single crystals were polished using diamond slurry. We analyzed the polytype and quality of the SiC crystals using high-resolution X-ray diffraction (XRD) and Raman spectroscopy. The resistivity of the SI SiC crystals was analyzed using contactless resistivity mapping (COREMA) measurements.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.2
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• pp.106-112
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• 2010

In order to compete with other flat display devices such as Liquid Crystal Displays (LCDs) and organic light emitting diodes (OLEDs), Plasma Display Panels (PDPs) require to have high performances like high image quality, low power consumption and high speed driving. In this paper, Fe doped MgO protective layer was introduced for higher performance. Both the surface characteristics of the deposited thin films and the electro-optical properties of 4 inch test panels were investigated. It has been demonstrated experimentally that ac PDP with Fe doped MgO protective layer has lower discharge voltage than that of undoped MgO film, which corresponds to measured secondary electron emission coefficients. The crystallinity and surface roughness of thin films were determined by XRD patterns and AFM images. In addition, ac PDP with Fe doped MgO protective layer has improved address discharge time lag for high speed driving.

• Transactions on Electrical and Electronic Materials
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• v.11 no.2
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• pp.61-64
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• 2010

In this paper, we investigate the quality difference of SiC crystals grown by a conventional physical vapor transport method using various SiC powders. While the growth rate was revealed to be dependent upon the particle size of the SiC powder, the growth rate of SiC bulk crystals grown using SiC powder with a smaller particle size (20 nm) was definitely higher than those using lager particle sizes with $0.1-0.2\;{\mu}m$ and $1-10\;{\mu}m$, respectively. All grown 2 inch SiC single crystals were proven to be the polytype of 6H-SiC and the carrier concentration levels of about $10^{17}\;cm^3$ were determined from Hall measurements. It was revealed that the particle size and process method of SiC powder played an important role in obtaining a good quality, high growth rate, and to reduce growth temperature.