• The korean journal of orthodontics
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• v.36 no.6
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• pp.412-421
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• 2006

Objective: The result of finite element analysis depends on material properties, structural expression, density of element, and boundar or loading conditions. To represent proper elastic behavior, a finite element model was made using Hounsfield unit (HU) values in CT images. Methods: A 13 year 6 month old male was used as the subject. A 3 dimensional visualizing program, Mimics, was used to build a 3D object from the DICOM file which was acquired from the CT images. Model 1 was established by giving 24 material properties according to HU. Model 2 was constructed by the conventional method which provides 2 material properties. Protraction force of 500g was applied at a 45 degree downward angle from Frankfort horizontal (FH) plane. Results: Model 1 showed a more flexible response on the first premolar region which had more forward and downward movement of the maxillary anterior segment. Maxilla was bent on the sagittal plane and frontal plane. Model 2 revealed less movement in all directions. It moved downward on the anterior part and upward on the posterior part, which is clockwise rotation of the maxilla. Conclusion: These results signify that different outcomes of finite element analysis can occur according to the given material properties and it is recommended to use HU values for more accurate results.

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.42-54
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• 1995

$Ta_2O_5$ thin film IS a promising material for the high dielectrics of ULSI DRAM. In this study, $Ta_2O_5$ thin film was grown on p-type( 100) Si wafer by thermal metal organic chemical vapo deposition ( MCCVD) method and the effect of operating varialbles including substrate temperature( $T_s$), bubbler temperature( $T_ \sigma$), reactor pressure( P ) was investigated in detail. $Ta_2O_5$ thin film were analyzed by SEM, XRD, XPS, FT-IR, AES, TEM and AFM. In addition, the effect of various anneal methods was examined and compared. Anneal methods were furnace annealing( FA) and rapid thermal annealing( RTA) in $N_{2}$ or $O_{2}$ ambients. Growth rate was evidently classified into two different regimes. : (1) surface reaction rate-limited reglme in the range of $T_s$=300 ~ $400 ^{\circ}C$ and (2: mass transport-limited regime in the range of $T_s$=400 ~ $450^{\circ}C$.It was found that the effective activation energies were 18.46kcal/mol and 1.9kcal/mol, respectively. As the bubbler temperature increases, the growth rate became maximum at $T_ \sigma$=$140^{\circ}C$. With increasing pressure, the growth rate became maximum at P=3torr but the refractive index which is close to the bulk value of 2.1 was obtained in the range of 0.1 ~ 1 torr. Good step coverage of 85. 71% was obtained at $T_s$=$400 ^{\circ}C$ and sticking coefficient was 0.06 by comparison with Monte Carlo simulation result. From the results of AES, FT-IR and E M , the degree of SiO, formation at the interface between Si and TazO, was larger in the order of FA-$O_{2}$ > RTA-$O_{2}$, FA-$N_{2}$ > RTA-$N_{2}$. However, the $N_{2}$ ambient annealing resulted in more severe Weficiency in the $Ta_2O_5$ thin film than the TEX>$O_{2}$ ambient.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.277-277
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• 2007

$(Bi,La)_4Ti_3O_{12}$ (BLT) 물질은 결정 방향에 따른 강한 이방성의 강유전 특성을 나타낸다. 따라서 BLT 박막을 이용하여 FeRAM 소자 등을 제작하기 위해서는 결정의 방향성을 세심하게 제어하는 것이 매우 중요하다. 현재까지 연구된 BLT 박막의 방향성 조절 결과를 보면, BLT 박막을 스핀 코팅 법 (spin coating method)으로 중착하고, 핵생성 열처리 단계를 조절하여 무작위 방향성 (random orientation)을 갖는 박막을 제조하는 방법이 일반적이었다. 그런데 이러한 스핀 코팅법에서의 핵생성 단계의 제어는 공정 조건 확보가 너무 어려운 단점이 있다. 이러한 어려움을 극복할 수 있는 대안은 스퍼터링 증착법 (sputtering deposition method), PLD법 (pulsed laser deposition method) 등과 같은 PVD (physical vapor deposition) 법의 증착방법을 적용하는 것이다. PVD 법으로 증착하는 경우에는 이미 박막 내에 무수한 결정핵이 존재하기 때문에 핵생성 단계가 필요 없게 된다. PVD 증착법의 적용을 위해서는 타겟 (target)의 제조 및 평가 실험이 선행되어야 한다. 그런데 벌크 BLT 재료의 소결공정 조건과 전기적 특성에 관한 연구 결과는 거의 발표 되지 않고 있다. 본 실험에서는 $Bi_2O_3$, $TiO_2$ and $La_2O_3$ 분말을 이용하여 최적의 조성을 구하기 위하여 Bi양을 변화시키며 타겟을 제조 하였다. 혼합된 분말을 하소 후 pallet 형태로 성형하여 소결을 실시하였다. 시편을 1mm 두께로 연마하고, 표면에 silver 전극을 인쇄하여 전기적 특성을 측정하였다. Bi양이 3.28몰 첨가된 조성에서 최대의 잔류분극 (2Pr) 값을 얻었고, 이때의 값은 약 $18{\mu}C/cm^2$ 정도였다. 최적화된 조성 ($Bi_{3.28}La_{0.75}Ti_3O_{12}$)으로 BLT 타겟을 제조하여 PLD법으로 박막을 제조하였다. 박막 제조 시 압력은 $1{\times}10^{-1}\;{\sim}\;1{\times}10^{-4}\;Torr$ 범위에서 변화시켰다. $1{\times}10^{-1}\;Torr$ 압력을 제외하고는 모든 압력에서 BLT 박막이 증착되었다. 중착된 박막을 $650\;{\sim}\;800^{\circ}C$에서 30분간 열처리를 실시하고 전기적 특성을 평가한 결과, $1{\times}10^{-2}\;Torr$에서 증착한 박막에서 양호한 P-V (polarization-voltage) 이력곡선을 얻을 수 있었고, 이때의 잔류분극 (2Pr) 값은 약 $6\;{\mu}C/cm^2$ 이었다. 주사전자현미경 (SEM)을 이용하여 BLT 박막 표면의 미세구조도 관찰하였는데, 스핀코팅 법으로 증착한 경우에 관찰되었던 조대화된 입자들은 관찰되지 않았고, 상당히 양호한 입자 크기 균일도를 나타내었다.

• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.916-920
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• 2003

The change of structure and morphology in ( $U_{0.913}$G $d_{0.087}$) $O_2$ during oxidation at 475$^{\circ}C$ and heat treatment at 130$0^{\circ}C$ in air were investigated using XRD, SEM, and EPMA. The ( $U_{0.913}$G $d_{0.087}$) $O_2$ cubic phase converted to ( $U_{0.913}$G $d_{0.087}$)$_3$ $O_{8}$ orthorhombic phase by oxidation at 475$^{\circ}C$ in air. The XRD and EPMA result of the 130$0^{\circ}C$ heat treated powder revealed that ( $U_{0.913}$G $d_{0.087}$)$_3$ $O_{8}$ orthorhombic phase was separated into $U_3$ $O_{8}$ and ( $U_{0.67}$G $d_{0.33}$) $O_{2+}$x/ cubic phase. The weight variations of (U,Gd) $O_2$ with various Gd contents were measured using TGA at the same heat treated condition. The weight variation during the heat treatment of Gd dissolve (U,Gd) $O_2$ in air can be expressed in terms of phase reaction equations related with oxidation and phase separation. Based on these phase reaction, a initial content of Gd dissolved in (U,Gd) $O_2$ can be exactly calculated by measuring the weight change during the heat treatment.

• The Journal of Natural Sciences
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• v.15 no.1
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• pp.35-46
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• 2005

$LaFeO_3$ and substituted $LaFeO_3$ mixed oxides were prepared by Citrate and Cyanide method in air $850^{\circ}C$/24h. These oxides of orthorhombic perovskite were characterized by XRD and IR, but substituted $LaFeO_3$ with 0.5mol Cu at B site was not obtained single phase. Also, reduction reaction of un-substituted $LaFeO_3.17$ were two steps but each site substituted oxides were three steps reactions. These means that new reduction step of each site substituted oxides were atributed tot dopant.

• Korean Journal of Food Science and Technology
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• v.23 no.5
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• pp.627-632
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• 1991

The heat treatment indicators such as HMF contents, lactulose contents and whey protein denaturation rates were measured to refer to the heat treatment intensity of domestic market infant formulae. The HMF contents showed $21.0{\sim}43.9{\mu}mol/l:$ in the case of powder types, the HMF contents in enriched nutrient products(ii) were higher whereas in the case of liquid types they were packed in cans(i). The lactulose contents showed $2.5{\sim}11.4mg/100ml$ in the powder type and $27.0{\sim}164.8mg/100ml$ in the liquid type. There was much difference in the lactulose contents according to the product types. Compared with the ADPI standards, most of infant formulae were considered to be medium-heat class. The whey protein denaturation rates were $1.1{\sim}69.4%$ in the powder type and $37.4{\sim}71.3%$ in the liquid type.

• Korean Journal of Food Science and Technology
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• v.34 no.4
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• pp.565-569
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• 2002

This study was carried out to estimate the effects of preservatives (alcohol, adipic acid) and heat treatment $(40^{\circ}C,\;60^{\circ}C)$ for the prolongation of shelf-life on low-salt Kimchi. Low-salt Kimchi was prepared with salt replacements (NaCl 50%, KCl 36%, $MgSO_4$ 10%, $CaSO_4$ 3%, glutamic acid 0.2%). Chemical characteristics and microbiological parameters were monitored during fermentation at $20^{\circ}C$. When three kinds of preservative which were alcohol 2.0%, adipic acid 0.1% and their mixture were added to low-salt Kimchi, shelf-life of them were prolonged. To extend the shelf-life of low-salt Kimchi, when the heat treatment at $40^{\circ}C$ and $60^{\circ}C$ were tried, heat treatment at $60^{\circ}C$ was superior than at $40^{\circ}C$. In sensory evaluation of low-salt Kimchi, the control was showed the best quality in the overall acceptability. And low-salt Kimchi treated at $40^{\circ}C$ showed the most similar characteristics to the control Kimchi.

• Electrical & Electronic Materials
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• v.4 no.3
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• pp.201-210
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• 1991

본 논문에서는 (B $i_{1-x}$ P $b_{x}$)$_{2}$S $r_{2}$C $a_{2}$C $u_{3.6}$ $O_{y}$ (x=0~0.5)로 조성된 분말의 최적 하소온도를 결정하고 시편의 최적 소결온도를 규명하기 위하여 열분석을 하였다. 또 단일상의 고온 초전도체를 제작하기 위하여 열처리 온도, 시간 및 Pb 함량 변화에 따라 제작된 시편의 미세구조, 조성, 전기저항 및 전류밀도를 측정하여 상호 연관성을 종합적으로 분석, 검토하여 상변이에 관한 원인을 규명하고자 하였다. 또한 실용화 전 단계로서 임계특성 해석을 위하여 성형조건을 변화시켜 시편을 제작, 전류밀도값을 측정하였다.였다.다.

• Journal of the Korea Organic Resources Recycling Association
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• v.9 no.1
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• pp.90-98
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• 2001

The slow degradation rate of sewage sludge in anaerobic digesters is due to the rate limiting step of sludge hydrolysis. Therefore, the pre-treatment process had been carried out using acidic(pH 1.5, 3, 4, 5) and alkaline(pH9, 10, 13), thermal(50, 100, 150, $200^{\circ}C$) and ultrasonic treatment(400W, 20kHz, 15, 20, 25, 30, 35, 40, 50, 60min). In the best conditions of each treatment, the SCOD ratio(%) of treated/untreared samples were increased 102% in acid(pH5), 986% in alkali(pH13), 959% in thermal($200^{\circ}C$) and 1123% in ultrasonic(35min) treatment. As the result, the ultrasonic treatment was most effective, followed by alkali, thermal, acidic treatment. In the effects of total gas productivity, the thermal($200^{\circ}C$) pretreatment was the highest, followed by thermal($150^{\circ}C$), ultrasonic(90min), alkaline(pH9) and ultrasonic(50min).

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.47.2-47.2
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• 2011

광전환 효율 20% (AM1.5G) 이상의 고효율 화합물 박막태양전지의 광흡수층으로 많은 관심을 받고 있는 $Cu(In,Ga)Se_2$ (CIGS) 태양전지의 광흡수층은 다양한 공정에 의해 제조가 가능하다. 현재 고효율 CIGS 셀 생성을 위해 널리 사용되고 있는 CIGS 흡수층 성장공정은 "co-evaporation (동시증발법)"과 2-step 공정이라 불리는 "precursorselenization(전구체-셀렌화)" 방법이다. 동시증발법은 개별원소 Cu, In, Ga, Se들을 고진공 분위기에서 고온(550~600$^{\circ}C$) 기판위에 증착하는 방법으로 소면적에서 가장 좋은 효율(~20%)을 보이는 공정이다. 하지만, 고온, 고진공 공정조건과 대면적 증착시 온도 및 조성 불균일 등의 문제점 등으로 상용화에 어려움이 있다. 전구체-셀렌화 공정은 1단계에서 다양한 방식(예: 스퍼터링, 전기도금, 프린팅 등) 방식으로 CuGaIn 전구체를 증착하고, 2단계에서 고온(550~600$^{\circ}C$)하에 H2Se gas 혹은 Se vapor와 반응시켜 CIGS를 생성한다. 일본의 Showa Shell와 Honda Soltec 등에 의해 이미 상업화 되었듯이, 저비용 대면적으로 상업화 가능성이 높은 공정으로 평가되고 있다. 하지만, 2단계에서 사용되는 H2Se 및 Se vapor의 유독성, 기상 Se과 금속전구체 간의 느린 셀렌화 반응속도, 셀렌화반응 후 생성된 CIGS 박막 두께방향으로의 Ga 불균일 분포, 생성된 CIGS/Mo 계면 접착력 저하 등의 문제점들이 개선, 해결되어야만 상업화에 성공할 수 있을 것이다. 본 연구에서는 Se layer가 코팅된 금속전구체의 셀렌화 반응메카니즘을 in-situ high-temperature XRD를 이용하여 연구하였다. 금속전구체는 스퍼터링, 스프레이 등 다양한 방법으로 제조되었고, 반응메카니즘 연구결과를 바탕으로 Se 코팅된 금속전구체를 이용한 급속열처리 공정의 최적화를 시도하였다.