• Journal of information and communication convergence engineering
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• 제7권2호
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• pp.164-169
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• 2009

An RFID system consists of radio frequency tags attached to objects that need to be identified and one or more electromagnetic readers. Unlike the traditional bar code system, the great benefit of RFID technology is that it allows information to be read without requiring contact between the tag and the reader. For this contact-less feature, RFID technology in the near future will become an attractive alternative to bar code in many application fields. In almost all the 13.56MHz RFID systems, FSA (Framed Slot ALOHA) algorithm is used for identifying multiple tags in the reader's identification range. In FSA algorithm, the tag identification time and system efficiency depend mainly on the number of tags and frame size. In this paper, we propose a tag number estimation scheme and a dynamic frame size allocation scheme based on the estimated number of tags.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권11호
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• pp.508-511
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• 2003

In this paper, electrical characteristics of inductively coupled plasma in an electrodeless fluorescent lamp were investigated using a Langmuir probe with a variation of argon gas pressure. The RF output was applied in the range of 5 ∼ 50 (W) at 13.56 (MHz). The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of -100 (V) ∼+100 (V). When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from l0W to 30 〔W〕. Also, when the RF power was increased, electron density was increase. This implies that this method can be used to find an optimal RF rower for efficient light illumination in an electrodeless fluorescent lamp.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.20-24
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• 1998

Thin films of diamond-like carbon(DLC) can be successfully deposited by using a magnetron plasma chemical vapor deposition (CVD) method with an rf(13.56 MHz) plasma of $C_dH_8$. Plasma characteristics are analyzed as a function of the magnetic field. As the magnetic field increases, both electron temperature ($T_e$) and density ($n_e$)increase, but the negative dc self-bias voltage (-$V_{ab}$) decreases, irrespective of gas pressures in the range of 1~7 mTorr. High deposition rates have been obtained even at low gas pressures, which may be attributed to the increased mean free path of electrons in the magentron plasma. Effects of rf power and additive gas on the structural properties of DLC films aer also examined by using various technique namely, TED(transmissio electron diffraction) microanalysis, FTIR, and Raman spectroscopies.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2004년도 추계학술발표대회 논문집
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• pp.96-99
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• 2004

Silica fillers were coated by plasma polymer coatings of 1,3-diaminopropane, allylamine, pyrrole, 1,2-epoxy-5-hexene, allyl mercaptan and allyl alcohol using RF plasma (13.56 MHz). The coated fillers were then mixed with biphenyl epoxy, phenol novolac (curing agent) and/or triphenylphosphine (catalyst), and subjected to DSC analyses in order to elucidate the chemical reaction between functional moieties in the plasma polymer coatings and the epoxy resin. Only the samples with 1,3-diaminopropane and allylamine plasma polymer coated silica fillers showed heat of reaction peaks when they were mixed with biphenyl epoxy resin only, while these samples as well as the samples with 1,3-diaminopropane, allylamine and pyrrole plasma polymer coated silica fillers exhibited heat of reaction peaks when mixed with both biphenyl epoxy and phenol novolac (curing agent).

• 한국의학물리학회:학술대회논문집
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• 한국의학물리학회 2006년도 제33회 추계학술대회 발표논문집
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• pp.27-27
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• 2006

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2008년도 춘계학술대회논문집
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• pp.852-855
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• 2008

In this paper, we proposed a new type's PZT actuator using surface acoustic wave. This actuator uses Rayleigh wave as an operational traveling wave. For the development of the actuator, each components of surface acoustic wave motor like PZT substrate, slider and IDT was studied theoretically and fabricated. For the measurement of transfer function of PZT substrate and operation of surface acoustic wave motor, network analyzer and 13.56MHz RF generator were used. Also the model which expresses the driving characteristic best was suggested and simulation was executed for the suggested model. And the future research works for improvement of SAW actuator was suggested.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1838-1840
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• 1996

In order to study the relationship between the physical properties of glow discharge plasma and the physical behavior of TiN thin film, electrical characteristics of RF discharge plasma driven at 13.56MHz in a parallel-plate electrode system were measured. Plasma parameters, such as electron density and temperature, are also studied since they may be considered as one of the very important factors deciding the physical properties of TiN thin film under given conditions of applied biasd voltage and pressure. The TiN thin film were fabricated over a wide range of discharge conditions, and some of the general relationships between the measured plasma parameters and the properties of TiN thin film were discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.259.2-259.2
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• 2014

Multi-crystal Silicon wafer를 대기압에서 리모트타입의 RF-DBD를 이용하여 에칭을 하였다. DBD소스의 전극으로 알루미늄을 사용하였고 유전체로는 알루미나를 사용하였다(전극 갭을 기록). 전원공급은 13.56 MHz RF 전원장치를 이용하였으며 아르곤과 SF6 유량을 변수로 하여 실험하였다. Ar 유량은 2~10 slm, SF6는 0.2~1 slm으로 변화를 주어 최적화 조건을 찾았다. 결론적으로 SF6의 유량이 증가할수록 Si 에칭율이 증가하였다. 그러나 SF6의 유량이 2 lm일 때 에칭율이 감소하였다. 그리고 scan time이 45초일 때 $2.3{\mu}m/min$로 최대 에칭율을 얻었다.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2013년도 춘계학술대회
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• pp.513-514
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• 2013

최근 스마트 폰의 보급과 서비스 분야의 확대로 다양한 서비스와 모델들이 연구 개발되어 지고 있다. 그 중 RFID 종류 중 하나로, 13.56Mhz 주파수 대역에서 비 접촉식으로 근거리 통신 종류 하나인 NFC(Near Field Communication)는 기존 모바일 전자태그(RFID)를 확장시킨 응용개념으로 초단거리 무선통신 기술로 스마트폰 사용자에게 다양한 정보를 제공 한다. 본 논문에서는 NFC를 활용하여 박물관 시스템을 제안 하고자 하며, NFC 태그를 통하여 박물관 배주 전시 작품들에 대한 정보를 스마트폰으로 제공하며 작가의 관련 작품이나 기타 유용한 다른 작품에 대한 정보를 제공하는 서비스를 구현하여 NFC의 활용도를 제시하고자 한다.

• 한국통신학회논문지
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• 제26권12B호
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• pp.1733-1740
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• 2001

A monolithic 5 GHz image reject mixer using a 0.5-m GaAs MESFET technology is designed and simulated. The Mixer exhibits a 13.56 dB down-conversion gain, a SSB (Single SideBand) noise figure of 11.91 dB, an input IP3 (third order intercept point) of -3.73 dBm and a PldB (1-dB compression point) of -11.0 dBm. The critical issue in the image reject mixer is the phase accuracy and magnitude balance of the 90 phase shifting network. The proposed image reject mixer realizes a 90 phase shifter on chip. This phase shifting network does not need any phase adjusting to achieve the phase error specification of 3 over a frequency range from 800 MHz to 1GHz. The simulated overall image rejection ratio is better than 50 dB.