• 접착 및 계면
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• 제7권1호
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• pp.23-29
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• 2006

Polymer thin films of pentafluorostyrene (PFS) were prepared by RF plasma (13.56 MHz) polymerization in continuous wave (CW) mode, as a function of plasma power and monomer pressure. Conditions for film preparation were optimized by measuring the solvent resistance of plasma polymer thin films in DMAc, NMP, THF, acetone and chloroform, as well as by evaluating the optical clarity via UV-VIS measurements. Pulsed mode plasma polymerization was also utilized to enhance the optical properties of the films by varying the period of on-time and duty cycle. Finally, the films were subjected to refractive index measurements and analyzed by ${\alpha}$-step, TGA and FT-IR.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.302-305
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• 2000

It is important to control the electron energy distribution to have high quality plasma process. A conventional inductively coupled plasma(ICP) source with 13.56MHz power is not adequate for low damage sub-half micron patterning process due to higher electron temperature. Only the pulsed plasma technique seems to provide low electron temperature, and thus low process damage. Recently, a novel method proposed by us, named as ‘Enhanced-ICP’, which uses periodic weak axial magnetic field added to a normal ICP source, has shown great improvement in etch characteristics. changes of plasma characteristics according to the frequency of time-varying axial magnetic field have been observed by probe-time-averaged Langmuir probe.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1528-1529
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• 2011

플라즈마 변수를 측정하기 위한 가장 일반적인 방법은 정전탐침(Langmuir Probe)을 이용하는 것이다. 정전탐침은 RF 플라즈마 내에 삽입될 경우 탐침의 전위가 플라즈마 전위에 의해 진동하여 탐침전류의 왜곡이 발생하여 정확한 플라즈마 변수 측정이 어렵다. 탐침 전위의 변동을 최소화하기 위해 임피던스가 큰 인덕터를 탐침 회로 내에 삽입한다. 본 연구에서는 자기 공명 주파수가 13.56MHz 근방의 인덕터 3종류를 선정하여 간단한 RF 보상 정전탐침을 제작하여 유도결합형 플라즈마의 특성을 측정하였다. RF 보상 정전탐침에 의해 구해진 플라즈마의 전자 온도 및 플라즈마 전위는 감소하며, 플라즈마의 전자 밀도는 증가함을 알 수 있었다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.210-214
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• 2007

Silicon nanoparticles are widely studied as a material with great potential for wide applications. For application to present industry, it should be easy to control the characteristics of nanoparticle including the size and structure. In this paper, we investigated the formation of Si nanoparticle using pulse plasma technology. Plasma technology is already quite common in device industry and the size of nanoparticle can be easily controlled according to plasma pulse duration. An inductively-coupled plasma chamber with RF power (13.56 MHz) was used with DC-biased grid $(-200\sim+200\;V)$ installed above the substrate. In order to measure the shape and size of nanoparticle, TEM was used. It was found that the size of nanoparticles can be controlled well with the plasma pulse duration and the collection efficiency is increased with the use of either negative or positive DC-bias.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.540-540
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• 2013

In this studying, we investigated the basic properties of N-doped plasma polymer. The N-doped ethylcyclohexane plasma polymer thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Ethylcyclohexenewas used as organic precursor (carbon source) with hydrogen gas as the precursor bubbler gas. Additionally, ammonia gas [NH3] was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, FE-SEM, and water contact angle measurement. The ellipsometry results showed the refractive index change of the N-doped ethylcyclohexene plasma polymer film. The FT-IR spectrashowed that the N-doped ethylcyclohexene plasma polymer films were completely fragmented and polymerized from ethylcyclohexane.

• 대한전기학회논문지
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• 제35권5호
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• pp.199-204
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• 1986

The breakdown phenomena of N2 gas by 13.56MHz electric field are very different from those under steady field. In this paper we analyzed the breakdown phenomena by using electron distribution function and diffusion equation. The second-order differential equation derived from the Boltzmann equation is solved for the electron distribution function. The ionization rate and diffusion coefficient are calculated using kinetic theory formulas. The breakdown condition is that the number of electrons produced by ionization equal the number diffusing to the walls of the discharge chamber. Theses theoretical breakdown electric fields are calculated by the computer and compared with the experimental values.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권3호
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• pp.133-136
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• 2004

Low-Pressure inductively coupled RF discharge sources have important industrial applications mainly because they can provide a high-density electrodeless plasma source with low ion energy and low power loss. In an inductive discharge, the RF power is coupled to the plasma by an electromagnetic interaction with the current flowing in a coil. In this paper, the experiments have been focussed on the electric characteristic and carried out using a single Langmuir probe. The internal electric characteristics of inductively coupled Ar RF discharge at 13.56(MHz) have been measured over a wide range of power at gas pressure ranging from 1∼70(mTorr).

• 한국철도학회논문집
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• 제4권4호
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• pp.155-161
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• 2001

In this paper, the method is suggested to prevent data collision or damage on RFID(Radio Frequency Identification) system, in case a reader reading multi-tag simultaneously, using binary-search algorithm and Time-domain anti-collision procedure at reader and tag, respectively. The RFID system is designed that Reader enable to communicate with Tag on 13.56MHz bandwidth which is ISM(Industrial Science Medical) bandwidth, antennas of Tag part are designed using MCRF335 Chip. When RF communication is achieved between reader and tag, in case that data is transmitted to reader pass through multiple tags simultaneously, a study on the anti-collision method for the situation that the data collision occurs is performed.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.118-122
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• 2007

회전대칭성을 향상시키기 위해서 3턴 교차 안테나론 제작하였다. 3턴의 구조는 안테나를 병렬 type으로 제작하였으며, 플라즈마 밀도는 13.56MHz RF 전력에서 $10^{11}{\sim}10^{12}\;cm^{-3}$ 고밀도 플라즈마가 발생되었으며 균일도는 200mm 기준 10% 이내로 나왔다. 병렬 구조로 낮은 인덕턴스로 인해 안테나 양단의 걸리는 전압이 알곤 압력 10mTorr, 100W에서 약 227V로 낮은 값을 가졌다. 축전결합 효과가 작을 것으로 기대된다. 그리고 회전대칭성은 최대 7% 이내로 매우 우수한 특성을 갖는 것을 확인할 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.218-221
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• 2008

Bottom-gate microcrystalline silicon thin film transistors (${\mu}c$-Si:H TFTs) were fabricated on glass and transparent polyimide substrates by conventional 13.56 MHz RF plasma enhanced chemical vapor deposition at $200^{\circ}C$. The deposition rate of the ${\mu}c$-Si:H film is 24 nm/min and the amorphous incubation layer near the ${\mu}c$-Si:H/silicon nitride interface is unobvious. The threshold voltage of ${\mu}c$-Si:H TFTs can be improved by $H_2$ or $NH_3$ plasma pretreatment silicon nitride film.