• Transactions on Electrical and Electronic Materials
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• v.5 no.6
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• pp.237-240
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• 2004

In this paper, a CMOS bridge rectifier for HF and microwave RFID systems is presented. The proposed RFID CMOS bridge rectifier is designed with two NMOSs and two PMOSs whose gates are connected to the antenna, and it is operated as a full wave bridge rectifier. The simulation results obtained with SPICE show the well rectified and high enough DC output voltages for the operating frequencies of 13.56 MHz, 915 MHz, and 2.45 GHz which are used in various RFID systems. The obtained DC output voltages are sufficiently high for driving the low power microchip in RFID transponder for the frequency range of HF and microwave.

• Transactions on Electrical and Electronic Materials
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• v.7 no.3
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• pp.103-107
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• 2006

In this paper, a CMOS complementary bridge rectifier for driving RFID transponder chips is presented. The proposed RFID CMOS complementary bridge rectifier is designed with two NMOSs at the input, which are configured by cross-connected gate structures, and two PMOSs and two NMOSs at the output, which are configured by diode-connected MOS structures. Output characteristics of the proposed rectifier are analyzed with the high frequency small-signal equivalent circuit and verified with SPICE for RFID operating frequencies of 13.56 MHz HF for ISO 18000-3, 915MHz UHF for ISO 18000-6, and 2.45 GHz microwave for ISO 18000-4. Simulation results show well-rectified and high enough DC output voltages for driving the low power microchip in the RFID transponder for the frequency range from HF to microwave. DC output voltages are dropped by only around 0.7 V from the input peak-to-peak voltages.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.244-245
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• 2007

The RF inductive discharge of inductively couples plasma (ICP) continues to attract growing attention as an effective plasma source in many industrial applications, the best known of which are plasma processing and lighting technology. Although most practical ICPs operate at 13.56 [MHz] and 2.65 [MHz], the trend to reduce the operating frequency is clearly recognizable from recent ICP developments. in and electrodeless fluorescent lamp, the use of a lower operating frequency simplifies and reduces cost of RF matching systems and RF generators and can eliminate capacitive coupling between the inductor coil and plasma, which could be a strong factor in wall erosion and plasma contamination. In this study, electric and optical characteristics of electrodeless fluorescent lamp by changing ferrite position is discussed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.171-175
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• 2006

RFID는 전자TAG를 사물에 부착하여, 사물이 주위 상황을 인지하고 기존 IT 시스템과 실시간으로 정보교환과 처리할 수 있는 기술이다. 바코드나 Smart Card에 비하여 우수한 특성에 의해 다양한 응용이 가능하며, 향후 900MHZ 대역 제품이 현재의 13.56MHZ 대역을 대신하여 주력 제품이 될 것이라고 예상되고 있다. 현재 RFID가 도입되어 사용되는 T-Money(버스카드)와 출입통제 등 여러가지 분야에서 활용되고 있다. 하지만 RFID는 비접촉식 수신거리에 최대 장점을 가지고 있지만 반대로 수신거리의 문제로 추적이 가능하다는 문제를 가지고 있다. 이것은 사용자의 프라이버시가 될 수 있으며 위조나 변조에 대해서 매우 취약하다는 것에 문제가 있다. 이 논문에서는 보안위협과 제시된 보안기법을 보고 활용성에 대한 고찰을 보겠다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.74-74
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• 2009

The ArF PR mask was. developed to overcome the limit. of sub 40nm patterning technology with KrF PR. But ArF PR difficult to meet the required PR selectivity by thin PR thickness. So need to the multi-stack mask such as amorphous carbon layer (ACL). Generally capacitively coupled plasma (CCP) etcher difficult to make the high density plasma and inductively coupled plasma (ICP) type etcher is more suitable for multi stack mask etching. Hybrid Coupled Plasma source (HCPs) etcher using the 13.56MHz RF power for ICP source and 2MHz and 27.12MHz for bias power was adopted to improve the process capability and controllability of ion density and energy independently. In the study, the oxide trench which has the multi stack layer process was investigated with the HCPs etcher (iGeminus-600 model DMS Corporation). The results were analyzed by scanning electron microscope (SEM) and it was found that etching characteristic of oxide trench profile depend on the multi-stack mask.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1147-1150
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• 2003

The RF inductive discharge or inductively coupled plasma (ICP) continues to attract growing attention as an effective plasma source in many industrial applications, the best known of which are plasma processing and lighting technology Although most practical ICPs operate at 13.56 (MHz) and 2.65 (MHz), the trend to reduce the operating frequency is clearly recognizable from recent ICP developments. In an electrodeless fluorescent lamp, the use of a lower operating frequency simplifies and reduces cost of rf matching systems and rf generators and can eliminate capacitive coupling between the inductor coil and plasma, which could be a strong factor in wall erosion and plasma contamination. In this study, the configuration of ferrite and fixture which operates at the frequency of 2.65 (MHz) will be discussed, by using the electromagnetic simulation (Maxwell 2D).

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.134.2-134.2
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• 2017

최근 고성능, 저 전력 반도체 소자를 위한 미세 공정 기술이 발전함에 따라, gate oxide의 두께 및 선폭이 감소하고, aspect ratio가 증가하고 있는 추세이다. 따라서 얇아진 gate oxide를 통한 채널 물질로의 boron 확산을 막기 위한 고농도 질화 막 증착의 필요성이 높아지고 있으며, high aspect ratio의 gate oxide에 적용 가능한 우수한 step coverage의 질화막 또한 요구되고 있다. 이러한 요구조건을 만족시키기 위해 일반적인 13.56MHz의 플라즈마 소스를 이용한 질화연구들이 선행되어져 왔으나, 높은 binding energy(~24 eV)를 가지고 있는 N2 molecule gas를 효과적으로 dissociation 하지 못해 충분한 질화공정이 수행되어질 수 없었을 뿐만 아니라 높은 공정온도($>200^{\circ}C$에서 진행되어 반도체소자에 손상을 줄 수 있다. 본 연구에서는 이러한 문제들을 해결하기 위해 VHF (162MHz)를 이용한 플라즈마를 통해 고밀도에서 낮은 전자온도와 높은 진동온도의 플라즈마를 구현하여 20%이상의 높은 질화율을 얻을 수 있었고, multi-tile push-pull 플라즈마 소스를 통해 VHF 사용 시 나타나는 standing wave effect를 제어하여 high aspect ratio의 gate sidewall spacer에 우수한 step coverage의 질화막을 형성시킬 수 있었다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.05a
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• pp.75-76
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• 2016

Even if ICS(Interference Cancellation System) repeater is used in wireless communication system, it has the disadvantage that it must have enough distance between Donor and Service antenna to be isolated. In this paper, new ICS repeater integrated antenna with high insolation characteristics is designed. The proposed antenna is fabricated for 800MHz and measured. Bandwidth and gain are optimized by changing the stub lengths near main patch and power divider, and also by changing the size of parasitic patch. This antenna has a return loss less than -13 dB, a gain over 3 dBi, and an isolation between the donor and the server antennas less than -56 dB from 824~894 MHz for CDMA mobile communication. Therefore, the proposed antenna structure can be applied to eliminate the shadow area and to expand the coverage area for any other wireless communication bands.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.3
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• pp.343-354
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• 2012

In this paper, various spiral zeroth-order resonators are proposed for wireless power transmission. Since a zerothorder resonance(ZOR) mode of meta-material transmission lines has the characteristic of an infinite wavelength, its frequency is independent of physical length. Also, to obtain high transmission efficiencies high-Q resonators and strong coupling coefficient between coupled resonators are required. Therefore, the resonators consist of spiral inductor and lumped capacitor to use the ZOR mode and they are optimized via parametric study and circuit analysis for a high-Q resonator design. The optimized resonators are simulated and compared with a conventional spiral resonator and one of them was fabricated and measured. The fabricated one has a dimension of $20cm{\times}20cm{\times}8cm$($0.009{\lambda}_0{\times}0.009_{\lambda}_0{\times}0.004{\lambda}_0$) and the transmission efficiency of 80 % is measured at 13.56 MHz at transmitted distance of 40 cm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1091-1097
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• 2013

This paper presents a rectifier with comparator using unbalanced body biasing in $0.11{\mu}m$ RF CMOS process. It is composed of MOSFETs and two comparators. The comparator is used to reduce reverse leakage current which occurs when the load voltage is higher than input voltage. For the comparator, unbalanced body biasing is devised. By using unbalanced body biasing, reference voltage for comparator changing from high state to low state is increased, and it reduces time interval for leakage current to flow. 13.56 MHz 2 Vpp signal is used for input and $1k{\Omega}$ resistor and 1 nF capacitor are used for output load for simulation and experimental environment. In simulation environment, voltage conversion efficiency(VCE) is 87.5 % and Power conversion efficiency(PCE) is 50 %. When the rectifier is measured, VCE shows 90.203 % and PCE shows 45 %.