• 한국소음진동공학회논문집
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• 제24권8호
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• pp.651-658
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• 2014

Notification 2013-611 of MOLIT has come into effect. It relates primarily to new standard impact source. In this study, an in-depth experimental analysis of the difference between a bang machine and an impact ball was performed via field testing of shear wall and flat plate structure at 51 sites. This paper focuses on the difference in single number quantities between a bang machine and an impact ball. At wall thicknesses of 180 and 210 mm in shear wall structure, the single number quantities exhibited differences of 3.1 and 4.5 dB, respectively, and at thicknesses exceeding 250 mm in flat plate structure, the difference was constant at 4.6 dB. With regard to flat plate structures, the single-index difference increased up to 11 dB as the thickness of the floor slab increased. In general, the highest level of contribution for the bang machine was 63 Hz, irrespective of thickness determining bandwidth. The highest level for the impact ball were 63 Hz and 125 Hz. In future research, when reviewing additional field performance measurement data, it will be necessary to consider a detailed examination instead of the current method of uniformly adding 3 dB for all thicknesses and types of structures.

• 대한전자공학회논문지SD
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• 제42권8호
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• pp.53-60
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• 2005

최근 낮은 기가비트급 광통신 집적회로의 구현에 sub-micron CMOS 공정이 적용되고 있다. 본 논문에서는 표준 0.35mm CMOS 공정을 이용하여 4채널 3.125Gb/s 차동 전치증폭기 어레이를 구현하였다. 설계한 각 채널의 전치증폭기는 차동구조로 regulated cascode (RGC) 설계 기법을 이용하였고, 액티브 인덕터를 이용한 인덕티브 피킹 기술을 이용하여 대역폭 확장을 하였다 Post-layout 시뮬레이션 결과, 각 채널 당 59.3dBW의 트랜스임피던스 이득, 0.5pF 기생 포토다이오드 캐패시턴스에 대해 2.450Hz의 -3dB 대역폭, 그리고 18.4pA/sqrt(Hz)의 평균 노이즈 전류 스펙트럼 밀도를 보였다. 전치증폭기 어레이의 공급전원은 단일전압 3.3V 이고, 전력소모는 92mw이다. 이는 4채널 RGC 전치증폭기 어레이가 저전력, 초고속 광인터컨넥트 분야에 적합함을 보여준다.

• Journal of Electrical Engineering and information Science
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• 제3권2호
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• pp.239-244
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• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 합동 추계학술대회 논문집 정보 및 제어부문
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• pp.237-240
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• 2002

We have studied a RF energy transformation. In this paper, we introduced proximity sensor using RF energy transformation. We used 125kHz RF signal as carrier frequency and BPSK circuit, PNP proximity sensor and designed circuit to transmit to the reader through the antenna with data which sensor had acquired. Micro-controller, oscillator, power amp, FSK Modulation module are included in the circuit. Max 323 chip is applied to analog switch and used to HYP-30R10NA sensor chip.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 G
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• pp.3117-3119
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• 1999

In this paper, a new phase detector which can detect phase difference of variable input frequency and represent as a DC voltage is designed. The proposed phase detector has detection range from $-180^{\circ}$ to $180^{\circ}$. It is implemented by digital electronic circuit. It operates from 125 kHz to 4 MHz frequency of input signal and it's maximum phase error is $360/256^{\circ}$.

• 한국운동역학회지
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• 제26권1호
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• pp.31-37
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• 2016

Purpose: The purpose of this study was to investigate the differences in FT (free-torque) components between non-fatigue and fatigue conditions induced by prolonged running. Methods: Fifteen healthy runners with no previous lower-extremity fractures ($22.0{\pm}2.1$ years of age) participated in this study. Ground reaction force data were collected for the right-stance phase for 10 strides of 5 and 125-min running periods at 1,000 Hz using an instrumented force platform (instrumented dual-belt treadmills, Bertec, USA) while the subjects ran on it. The running speed was set according to the preferences of the subjects, which were determined before the experiment. FT variables were calculated from the components of the moment and force output from the force platform. A repeated-measures one-way ANOVA was used to test for significant differences between the two conditions. The alpha level for all the statistical tests was 0.05. Results: The absolute FT at the peak braking force was significantly greater after 5 mins of running than after 125 mins of running-which was regarded as a fatigued state-but there were no significant differences in the absolute peak FT or impulse between the conditions. Conclusion: The FT variables in the fatigue condition during prolonged running hardly affect the tibial stress syndrome.

• ETRI Journal
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• 제33권1호
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• pp.125-127
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• 2011

This letter presents a new type of resonator, namely, the split quarterwave microstrip resonator (SQMR), to improve the poor harmonic suppression and low Q-factors in conventional quarterwave microstrip resonators. An oscillator incorporating the proposed SQMR is designed, fabricated, and tested to demonstrate that, not only the second harmonic suppression, but also the phase noise of the oscillator can be improved. The oscillator with the SQMR shows improved second harmonic suppression of -74.59 dBc and phase noise figure of merit of -169.77 dBc/Hz at 1 MHz offset.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 B
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• pp.1263-1265
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• 2004

RF-ID system is one of the very interesting field not only in a technical and economical point of view but also that people are still trying to realize lossless power transmission. This paper has a purpose on the efficient power transmission at the passive type IDcard by using wireless power transmission system. The most difficult but important part of the passive type RF-ID system is building the system that supplies power from Reader-antenna to IDcard-antenna. To check what is the most efficient way to deliver power depending on what kind of specifications of the power-amp in reader, antenna and antenna in IDcard is for operating IDcard circuit efficiently receiving the power from reader-antenna. For this, we used 125kHz sinewave for RF signal as a basic specification, OP-amp for amplifying signal and power-amp for amplifying power, loop type antenna.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2009년도 춘계학술대회 논문집
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• pp.64-67
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• 2009

Vibrational micro-forming of pyramidal shape patterns was conducted for an Al superplastic alloy, Al 5083 and a Zr-based bulk metallic glass, $Zr_{62}Cu_{17}Ni_{13}Al_8$. A vibrational micro-forming system was specially designed for generating vibrational load by combining a PZT actuator with a signal generator. Single crystal Si micro dies with wet-etched pyramidal patterns were used as master dies for vibrational micro-forming. The micro-formed pattern height was increasing with increasing the frequency of the vibrational load. In particular, the vibrationally-microformed pattern height was similar or even higher than the statically-microformed pattern height when the load frequency exceeded about 125 kHz. It was also observed that the crystal grains affect the surface quality of the microformed pattern and the distribution of the pattern height in the die cavity array.

• 전력전자학회논문지
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• 제22권2호
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• pp.118-125
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• 2017

In this paper, we propose a smart transformer for a smart transformer miniature model, which can replace a 60 [Hz] single-phase transformer installed in an electric vehicle. The proposed smart transformer is lighter than a conventional transformer, can control instantaneous voltage, and can be expected to improve power quality through harmonic compensation. The proposed intelligent transformer consists of an incoming part, an AC/DC converter, and a dual active bridge. Only the incoming part and the AC/DC converter are described in this paper. The proposed intelligent transformer has 75 kVA 3.3 kV input and 750 V DC output, which are verified by simulation and experiment.