• Journal of the Korean Ceramic Society
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• v.54 no.3
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• pp.249-256
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• 2017

We design Ge-Al multilayer assemblies as anode materials for Li-ion batteries, in which Ge and Al thin films are alternately deposited by a radio sputtering method. By sandwiching Ge layers between Al layer, the cyclability, rate capability, and capacity of Ge are improved significantly. The success of the Ge-Al multilayer is attributed to the Al films. To maintain the integrity of electrical contact, Al acts as an elastic layer, which can expand or shrink with the Ge film upon lithiation or delithiation. In addition, the presence of the Al film on the surface can prevent direct contact of Ge and electrolyte, thereby reducing the growth of a SEI layer. Importantly, with high electrical and ionic conductivities, the Al film provides efficient electrical and ionic routes for electrons and Li-ions to access the Ge film, promoting a high specific capacity and high rate capability for Ge.

• Journal of the Korean Magnetics Society
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• v.19 no.5
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• pp.157-160
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• 2009

We have studied electronic structures and magnetic properties of one dimensional Ge chain nanoclusters using OpenMX method based on densty functional method. The calculation results show the strong antiferromagnetic interaction between Cr and Ge atoms. The magnetic interaction between Ge and Ge atoms are almost antiferromagnetic behaviors. The magnetic exchange interaction are occurred over the sevaral Ge atom layers. The magnitude of this interaction depends number of Ge atom.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.918-922
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• 2006

Chalcogenide Phase change memory has the high performance necessary for next-generation memory, because it is a nonvolatile memory with high programming speed, low programming voltage, high sensing margin, low power consumption and long cycle duration. To minimize the power consumption and the program voltage, the new composition material which shows the better phase-change properties than conventional $Ge_2Sb_2Te_5$ device has to be needed by accurate material engineering. In the present work, we investigate the basic thermal and the electrical properties due to phase-change compared with chalcogenide-based new composition $Ge_1Se_1Te_2$ material thin film and convetional $Ge_2Sb_2Te_5$ PRAM thin film. The fabricated new composition $Ge_1Se_1Te_2$ thin film exhibited a successful switching between an amorphous and a crystalline phase by applying a 950 ns -6.2 V set pulse and a 90 ns -8.2 V reset pulse. It is expected that the new composition $Ge_1Se_1Te_2$ material thin film device will be possible to applicable to overcome the Set/Reset problem for the nonvolatile memory device element of PRAM instead of conventional $Ge_2Sb_2Te_5$ device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.629-637
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• 2008

We report several experimental data capable of evaluating the amorphous-to-crystalline (a-c) phase transformation in $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ (x = 0, 0.05, 0.1) thin films prepared by a thermal evaporation. The isothermal a-c structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of $800{\sim}3000$ nm using a UV-vis-IR spectrophotometer. A speed of the a-c transition was evaluated by detecting the reflection response signals using a nano-pulse scanner with 658 nm laser diode (power P = $1{\sim}17$ mW, pulse duration t = $10{\sim}460$ ns). The surface morphology and roughness of the films were imaged by AFM. It was found that the crystallization speed was so enhanced with an increase of Ag content. While the sheet resistance of c-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was similar to that of c-phase $Ge_2Sb_2Te_5$ (i.e., $R_c{\sim}10{\Omega}/{\square}$), the sheet resistance of a-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was found to be lager than that of a-phase $Ge_2Sb_2Te_5$, $R_a{\sim}5{\times}10^6{\Omega}{/\square}$. For example, the ratios of $R_a/R_c$ for $Ge_2Sb_2Te_5$ and $(Ag)_{0.1}(Ge_2Sb_2Te_5)_{0.9}$ were approximately $5{\times}10^5$ and $5{\times}10^6$, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.10
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• pp.4962-4969
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• 2013

The purpose of this experiment is to evaluate of optimized FS techniques for T2 weighted abdominal MRI compared of TSE-SPIR fat suppression and GE-PROSET fat suppression. All MR examinations were performed on a 1.5 T(Philips, Medical System, Achieva) scanner using 16 channel mult-coils. All images were performed in the axial plane using TSE-SPIR and GE-PROSET. The mean SNRs of the retroperitoneal and mesenteric fat for TSE-SPIR and GE-PROSET were 31.50, 4.15 and 32.39, 7.03. The mean CNRs of the bowel and retroperitoneal, mesenteric fat for TSE-SPIR and GE-PROSET were 52.69, 74.54 and 26.12, 68.78). The delineation of bowel wall margins with TSE-SPIR(2.4) and GE-PROSET(1.8) were significantly improved using TSE-SPIR. The delineation of pancreas wall with TSE-SPIR(1.90), GE-PROSET(2.80) were significantly improved using GE-PROSET. In conclusion, TSE-SPIR fat suppression was superior to GE-PROSET fat suppression in T2 WI FS abdominal MRI.

• Journal of Powder Materials
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• v.9 no.6
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• pp.422-432
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• 2002

Mechanically driven decomposition of intermetallics during mechanical milling(MM 1 was investigated. This process for Fe-Ce and Fe-Sn system was studied using conventional XRD, DSC, magnetization and alternative current susceptibility measurements. Mechanical alloying and milling form products of the following composition (in sequence of increasing Gecontent): $\alpha$(${\alpha}_1$) bcc solid solution, $\alpha$+$\beta$-phase ($Fe_{2-x}Ge$), $\beta$-phase, $\beta$+FeGe(B20), FeGE(B20), FeGe(B20)+$FeGe_2$,$FeGe_2$,$FeGe_2$+Ge, Ge. Incongruently melting intermetallics $Fe_6Ge_5$ and $Fe_2Ge_3$ decompose under milling. $Fe_6Ge_5$ produces mixture of $\hat{a}$-phase and FeGe(B20), $Fe_2Ge_3$ produces mixture of FeGe(B20) and $FeGe_2$ phases. These facts are in good agreement with the model that implies local melting as a mechanism of new phase for-mation during medchanical alloying. Stability of FeGe(B20) phase, which is also incongruently melting compound, is explained as a result of highest density of this phase in Fe-Ge system. Under mechanical milling (MM) in planetary ball mill, FeSn intermetallic decomposes with formation $Fe_5Sn_3$ and $FeSn_2$ phases, which have the biggest density among the phases of Fe-Sn system. If decomposition degree of FeSn is relatively small(<60%), milled powder shows superparamagnetic behavior at room temperature. For this case, magnetization curves can be fitted by superposition of two Langevin functions. particle sizes for ferromagnetic $Fe_5Sn_3$ phase determined from fitting parameters are in good agreement with crystalline sizes determined from XRD data and remiain approximately chageless during MM. The decomposition of FeSn is attributed to the effects of local temperature and local pressure produced by ball collisions.

• ETRI Journal
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• v.41 no.6
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• pp.829-837
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• 2019

The p-type nanowire field-effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in-depth technology computer-aided design (TCAD) with quantum models for sub-10-nm advanced logic technology. SiGe is adopted as the material for the ultrathin shell channel owing to its two primary merits of high hole mobility and strong Si compatibility. The SiGe shell can effectively confine the hole because of the large valence-band offset (VBO) between the Si core and the SiGe channel arranged in the radial direction. The proposed device is optimized in terms of the Ge shell channel thickness, Ge fraction in the SiGe channel, and the channel length (L_g) by examining a set of primary DC and AC parameters. The cutoff frequency (f_T) and maximum oscillation frequency (f_max) of the proposed device were determined to be 440.0 and 753.9 GHz when L_g is 5 nm, respectively, with an intrinsic delay time (τ) of 3.14 ps. The proposed SiGe-shell channel p-type nanowire FET has demonstrated a strong potential for low-power and high-speed applications in 10-nm-and-beyond complementary metal-oxide-semiconductor (CMOS) technology.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.219-224
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• 2001

Pd/Ge/Ti/Pt ohmic contact to n-type InCaAs was investigated. Minimum specific contact resistivity of $3.7\times10^{-6}\; \Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $400^{\circ}C$ for 10 seconds. This was related to the formation of Pd-Ge compounds and the in-diffusion of Ge atoms to InGaAs surface. However, the specific contact resistivity increased slightly to $low-10^5\; \Omega\textrm{cm}^2$ in the case of longer annealing time. Superior ohmic contact and non-spiking planar interface between ohmic materials and InGaAs were maintained after annealing at high temperature. Therefore, this thermally stable ohmic contact system is a promising candidate for compound semiconductor devices.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1672-1678
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• 1989

Major problems preventing the device-quality GaAs/Si heterostructure are the lattice mismatch of about 4% and difference in thermal expansion coefficient by a factor of 2.64 between Si and GaAs. Ge is a good candidate for the buffer layer because its lattice parameter and thermal expansion coefficient are almost the same as those of GaAs. As a first step toward developing heterostructure such as GaAs/Ge/Si entirely by a home-built PAE (plasma-assisted epitaxy), Ge films have been deposited on p-type Si (100)substrate by the plasma assisted evaporation of solid Ge source. The characteristics of these Ge/Si heterostructure were determined by X-ray diffraction, SEM and Auge electron spectroscope. PAE system has been successfully applied to quality-good Ge layer on Si substrate at relatively low temperature. Furthermore, this system can remove the native oxide(SiO2) on Si substrate with in-situ cleaning procedure. Ge layer grown on Si substrate by PAE at substrate temperature of 450\ulcorner in hydrogen partial pressure of 10mTorr was expected with a good buffer layer for GaAs/Ge/Si heterostructure.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.439-445
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• 2007

SiGe integrated circuits are being used in the field of high-speed wire/wireless communications and microwave systems due to the RF/high-speed analog characteristics and the easiness in the fabrication. Reducing the resistance variation in SiGe thin film resistors results in enhancing the reliability of integrated circuits. In this paper, we investigate the causes that generate the resistance nonuniformity after the silicon-based thin film resistor was fabricated, and consider the counter plan against that. Because the Ti-B precipitate, which formed during the silicide process of the SiGe thin film resistor, gives rise to the nonuniformity of SiGe resistors, the boron ions should be implanted as many as possible. In addition, the resistance deviation increases as the size of the contact hole that interconnects the SiGe resistor and the metal line decreases. Therefore, the size of the contact hole must be enlarged in order to reduce the resistance deviation.