• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.4
• /
• pp.578-588
• /
• 1997

Poly-$Si_{1-x}Ge_x$ films on oxidized Si wafer were prepared by rapid thermal chemical vapor deposition using the $SiH_4$ and $GeH_4$ gaseous mixture at various deposition conditions. The deposition temperature, $SiH_4\;: GeH_4$ flow ratio and pressure were varied from 400 to $600^{\circ}C$, 1 : 0.1-2 : 1 and 1 to 50 torr, respectively. In this work, we have investigated the change of Ge composition of poly-$Si_{1-x}Ge_x$ films deposited with the variation of deposition parameters and the effect of Ge composition on the deposition rate. From the experimental results, it was observed that the deposition rate increased with increasing deposition temperature and Ge composition. On the other hand, the Ge composition decreased with increasing temperature. As the deposition pressure increased, the deposition rate and Ge composition were increased linearly to 10 torr but increased slowly above it, which has been attributed to the slower rate of surface reaction than mass transfer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.3
• /
• pp.240-244
• /
• 2007

We investigated the diffraction grating efficiency by the Diode Pumped Solid State(DPSS 532 nm) laser beam wavelength to improve the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35},\;Ag/As_{40}Ge_{10}Se_{15}S_{35}$ and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Diffraction efficiency was obtained from DPSS laser, used (P:P)polarized laser beam on each thin films. As a result, for the laser beam intensity in $0.24mW/cm^2$, single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film shows the highest value of 0.161% diffraction efficiency at 300 s and for laser beam intensity in $2.4mW/cm^2$, it was recorded with the fastest speed of 50 s(0.013%), which the diffraction grating forming speed is faster than that of $0.24mW/cm^2$ beam. $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ double layer and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layered thin film also show the faster grating forming speed at $2.4mW/cm^2$ and higher value of diffraction efficiency at $0.24mW/cm^2$.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.60-60
• /
• 2003

디자인 룰에 의해 Gate Length 가 100nm 이하로 줄어듦에 따라 Gate delay 감소와 Switch speed 향상을 위해 보다 더 큰 drive current 를 요구하게 되었다. 본 연구는 dirve current 를 증가시키기 위해 고안된 Strained Si substrate 를 만들기 위한 SiGe layer 성장에 관한 연구이다. SiGe layer를 성장시킬 때 SiH$_4$ gas와 GeH$_4$ gas를 furnace에 flow시켜 Chemical 반응에 의해 Si Substrate를 성장시키는 LPCVD(low pressure chemical vapor depositio)법을 사용하였고 SIMS와 nanospec을 이용하여 박막 두께 및 Ge concentration을 측정하였고, AFM으로 surface의 roughness를 측정하였다. 본 연구에서 우리는 10,20,30,40%의 Ge concentration을 갖는 10nm 이하의 SiGe layer를 얻기 위하여 l0nm 이하의 fixed 된 두께로 SiGe layer를 성장시킬 때 temperature, GeH$_4$ gas pre-flow, SiH$_4$ 와 GeH$_4$의 gas ratio를 변화시켜 성장시킨 후 Ge 의 concentration과 실제 형성된 두께를 측정하였고, SiGe의 mole fraction의 변화에 따른 surface의 roughness 를 측정하였다. 그 결과 10 nm의 두께에서 temperature, GeH$_4$ gas pre-flow, SiH$_4$ 와 GeH$_4$ 의 gas ratio의 변화와 Ge concentration 과의 의존성을 확인 할 수 있었고, SiGe 의 mole traction이 증가하였을 때 surfcace의 roughness 가 증가함을 알 수 있었다. 이 연구 결과는 strained Si 가 가지고 있는 strained Si 내에서 n-FET 와 P-FET사이의 불균형에 대한 해결과 좀 더 발전된 형태인 fully Depleted Strained Si 제작에 기여할 것으로 보인다.

• The Korean Journal of Food And Nutrition
• /
• v.25 no.4
• /
• pp.737-746
• /
• 2012

본 연구는 mushroom complete medium(MCM) 액체배지에 수삼 추출물(GE, $65^{\circ}Bx$)을 첨가하여 면역활성이 증진된 노루궁뎅이버섯(Hericium erinaceum) 균사체를 배양하고, 균사체로부터 활성다당성분을 분획하고자 하였다. MCM에 대하여 GE를 5, 10과 15%(v/v) 첨가한 액체배지에서 균사체를 배양하고, 각각의 조다당획분(HE-GE-5-CP, HE-GE-10-CP와 HE-GE-15-CP)으로 분획하여 면역활성을 측정한 결과, HE-GE-10-CP는 HE-GE-5-CP와 HE-GE-15-CP보다 높은 활성을 나타내었으며, GE를 첨가하지 않은 MCM에서 배양된 균사체 조다당획분(HE-CP)보다 유의적으로 증진된 면역활성을 나타내었다. 또한, HE-GE-10-CP의 DEAE-Sepharose CL-6B 분획물 중 가장 높은 활성을 나타낸 HE-GE-10-CP-II획분은 대조군인 HE-CP의 어떠한 획분보다도 유의적으로 높은 면역활성과 암 전이 억제활성을 나타내었다. 한편, 활성획분인 HE-GE-10-CP-II는 arabinose, rhamnose, galactose, glucose와 uronic acid(molar ratio; 0.34:0.26:0.99:1.00:0.39)로 구성되어 있으나, 대조군인 HE-CP의 동일용매 용출획분으로서 HE-GE-10-CP-II보다는 활성이 낮은 HE-CP-II는 fucose, mannose, galactose와 glucose(molar ratio; 0.32:0.55:1.00:0.96)를 함유하여 다른 구성당 분포를 나타내었다. 따라서 노루궁뎅이버섯 균사체 액체배양에서 수삼 추출물 첨가는 균사체의 구성당 변화를 통한 면역활성 증진에 관여하는 것으로 사료되어 기능성 소재 개발에 유용할 것으로 사료된다.

• Korean Journal of Soil Science and Fertilizer
• /
• v.44 no.3
• /
• pp.465-472
• /
• 2011

To investigate the effect of inorganic ($GeO_2$) and organic (Ge-132) germanium treatment on Brasica juncea C. plant, growth characteristics and Ge contents were examined with various inorganic or organic germanium treatments (0, 5, 10, 25, 50, 75 and $100mg\;L^{-1}$), respectively. Brasica juncea C. growth did not much inhibited until Ge $10mg\;L^{-1}$ concentration under both Ge-132 and $GeO_2$ treatments as compared to control. On the other hand, at Ge concentration higher than $25mg\;L^{-1}$ concentration, Brasica juncea C. growth was inhibited under both Ge-132 and $GeO_2$ treatments. Under treatment of $GeO_2$, length of root and shoot slightly increased until $5mg\;L^{-1}$ concentration and dry weight slightly increased until $10mg\;L^{-1}$ concentration. Under treatment of Ge-132, length of root and shoot slightly increased until $10mg\;L^{-1}$ concentration and dry weight slightly increased until $25mg\;L^{-1}$ concentration. Total Ge contents in Brasica juncea C. early seedlings with $GeO_2$ treatment were a bit higher than those with Ge-132 treatment. Germanium was primarily accumulated in the roots (77%) with organic Ge (Ge-132) treatments, whereas Ge was primarily accumulated in the leaf (70%, respectively) with $GeO_2$ treatments. The Ge uptake rates in inorganic Ge treatments were slightly high than those in organic Ge treatments. Under inorganic Ge treatment with $2.5mg\;L^{-1}$, about 3% of Ge was accumulated into plant and distribution in leaf and root was 84.8% and 15.2%, respectively. Under organic Ge treatment with $2.5mg\;L^{-1}$, about 2.6% of Ge was accumulated into plant and distribution in leaf and root was 66.4% and 33.6%, respectively.

• Bulletin of the Korean Chemical Society
• /
• v.26 no.10
• /
• pp.1543-1548
• /
• 2005

Two isostructural new alkaline earth germanium nitrides, $Sr_6Ge_5N_2\;and\;Ba_6Ge_5N_2$, were obtained as single crystals from constituent elements in molten Na. They both crystallize in space group $P_{mmn}$ (No. 59) with a = 4.0007(8), b = 17.954(3), c = 9.089(2) $\AA$, Z = 2, and a = 4.1620(2), b = 18.841(1), c = 9.6116(5) $\AA$, Z = 2, for $Sr_6Ge_5N_2\;and\;Ba_6Ge_5N_2$, respectively. Their crystal structure contains features for both Zintl and nitride phases: zigzag anionic chain of $_{\infty}Ge^{2-}$, and dumbbell-shaped bent anion of ${GeN_2}^{4-}$. Counter cations of Sr or Ba wrap these anionic units in a channel-like arrangement. Unlike in other germanium nitrides, bond lengths of both Ge-N arms of the ${GeN_2}^{4-}$, are same in $Sr_6Ge_5N_2\;and\;Ba_6Ge_5N_2$.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.4 no.2
• /
• pp.16-21
• /
• 1967

This report describes actual fabrication mehod of Li drifted Ge detector. The gamma-ray spectrum from Cl(n, r) reaction measured by this Li drifted Ge detector are also shown. Energy resolution(FWHM) of this Li drifted Ge detector is 4.5KeV at the 122KeV( ), and 10KeV a the 1333KeV( ) respectively.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.55-55
• /
• 2011

질소 등을 GST225 상변화재료에 첨가시켜 비저항을 증가시킴으로서 PCRAM의 동작 전류를 감소시킨 연구가 선행된 바 있다. 본 연구에서는 GST225와 달리 고속 동작 특성을 갖는 것으로 널리 알려진 Ge-doped SbTe (GeST) 상변화 재료에 Carbon을 첨가하여 박막 특성을 연구하여 동작 전류 감소의 가능성을 타진하였다. 실험을 위한 박막 제작을 위해 2 inch size의 GeST 및 C doped GeST (C-GeST) single target을 이용하여 RF magnetron co-sputtering 하였다. 박막은 carbon이 첨가되지 않은 GeST와 carbon 첨가량이 늘어나는 순서로 C-GeST 1, C-GeST 2, C-GeST 3로 구성된다. 이 때 제작한 박막의 composition analysis를 위해 XRF/RBS/AES가 사용되었고 제작된 박막의 기본적인 특성평가를 위해 resistivity(${\rho}$)와 crystallzation temp.(Cx), surface morphology(AFM), x-ray diffraction pattern(XRD)를 측정하였다. 실험결과 GeST, C-GeST 1, C-GeST 2, C-GeST 3 박막의 Cx는 각각 209, 225, 233, $245^{\circ}C$로 측정되어 carbon 첨가량이 증가됨에 따라 결정화 온도가 증가되는 것을 알 수 있었다. 또한 ${\rho}$도 마찬가지로 annealing 온도를 약 $320^{\circ}C$로 할 경우 ${\rho}$(as-dep)와 ${\rho}$(crystalline) 모두 0.03 / $2.61*10^{-6}$, 0.08 / $7.93*10^{-6}$, 0.09 / $11.99*10^{-6}$, 0.13 / $13.49*10^{-6}{\Omega}{\cdot}m$로 증가하였다. 증가된 ${\rho}$의 원인이 박막의 grain size의 감소라고 단언 할 수는 없으나 AFM 측정결과 grain이라고 추측되는 박막 feature들의 size가 점차 감소하는 것을 확인하였다.

• Journal of Ginseng Research
• /
• v.29 no.3
• /
• pp.145-151
• /
• 2005

This study was carried out to determine the optimal submerged culture conditions for production of ginseng root containing germanium using plant tissue culture technology. The ginseng (Panx ginseng C.A. Meyer) .cot induced by plant growth regulators of 0.5 mg/L BAP and 3.0 mg/L NAA was cultured on SH medium and the effects of various $GeO_2$ concentrations, addition time of $GeO_2$ and pH of medium were investigated on fresh weight, saponin production and germanium accumulation in ginseng root. Optimal $GeO_2$ concentrations for fresh weight, saponin and germanium content were 10, 0 and 110ppm, respectively. When $GeO_2$ was added after 2 weeks cultivation of ginseng root, germanium content was higher than that of adding $GeO_2$ at the initial cultivation time, but saponin content and fresh weight were lower. pH 5.5 was found to be the most favorable condition for the growth of ginseng root and germanium accumulation, but saponin production was best at pH 6.0.

• Korean Journal of Medicinal Crop Science
• /
• v.3 no.3
• /
• pp.251-258
• /
• 1995

This study was carried out to find optimum concentration of germanium compounds and pH of medium on the induction and growth of callus from A. keiskei and P. ginseng and to intend to increase Ge. absorption by calli while those calli were subculturing on MS medium. Callus from a. keiskei was rarely induced under light condition. Under dark condition, callus in­duction from A. keiskei was good up to 5ppm, retarded at 50ppm of $GeO_2$, or C. E. Ge. O., and rarely done at 100 ppm of $GeO_2$ but was somewhat well at 100 ppm of C. E. Ge. O. The induction and growth of callus was good in order of pH 5. 7 > pH 5. 4 > pH 6. 0 Under light condition, the growth of callus induced from P. ginseng was poor at $1{\sim}10\;ppm$ of $GeO_2$, or C. E. Ge. O., but shooting from callus occurred frequently. Under dark condtion, the growth of callus from A. keiskei was good up to 5 ppm of $GeO_2$, or C. E. Ge. O. and was rarely done at 50 ppm of $GeO_2$, but was somewhat well even at 100 ppm of C. E. Ge. O. Shooting from callus occurred frequently in a. keiskei, especially at pH 5.7. The growth of callus from P. ginseng was poor at 10 ppm of $GeO_2$, or 50 ppm of C. E. Ge. O. Under dark condition, the amount of Ge absorption by callus induced from A. keiskei was much high­er than that from P. ginseng. The amount of Ge. absorption by callus treated with $GeO_2$, was higher than that treated with C. E. Ge. O.