• Title/Summary/Keyword: 10-Gb/s optical signal transmission

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An Effect of Electrical Interconnect in Optical Transceiver Module (광송수신 모듈 구현을 위한 전기 접속부에 관한 연구)

  • 조인귀;한상필;윤근병;정명영
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.8
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    • pp.863-870
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    • 2003
  • The digital transmission system entered in a RF region as digital system use IC chips of the speeder edge rate and clock speed nowadays. Optical path really was used in order to obtain the more capacity. In this paper, we described importance of electrical interconnect to get the signal integrity in optical module by simulation and experiment. 12 channel${\times}$2.5 G/ps optical parallel transmitter modules were manufactured by two different method ; access lines with microstrip and stripline type. We have clearly shown that the optical module adopting microstrip type with S$\sub$11/ $\geq$ -10 dB presents distortion but the optical module adopting stripline type with S$\sub$11/ $\leq$ : 15 dB obtains eye opening in 2.5 Gbis optical eye pattern response.

Power optimization of optical 40 wavelength division multiplexing channels at 3000 km transmission for link span variation (40 채널 파장 다중화 광신호 3000 km 전송에서 링크 구간 거리에 따른 광신호 세기 최적화)

  • Choi, Bo-Hun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.1
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    • pp.197-203
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    • 2013
  • Optical power optimization of 10 Gbps 40 wavelength division multiplexing channels was analyzed at the 3000 km long-haul transmission distance when the link span distance was changed between 40 km and 140 km. The signal performance of the transmission was obtained as a Q value and it was compared when input power into SSMF and input power into DCF on the transmission link were changed. The optimized input power into SSMF increased linearly to link span distance with 1 dB/km. The optimized power into DCF increased linearly with 0.5 dB/km up to 100 km link span, but it had no variation at longer link span than 100 km.

Comparison of link span dispersion compensation for optical 40 wavelength division multiplexing channels at 2000 km transmission (파장다중화 40 채널 광신호들의 2000 km 전송에서 링크구간 분산보상)

  • Choi, Bo-Hun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.7
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    • pp.1747-1753
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    • 2013
  • Signal performances according link span dispersion compensation conditions at the 2000 km long-haul transmission distance using 10 Gbps 40 wavelength division multiplexing channels were analyzed and compared. 95%, 97.5%, 100%, 102.5% and 105% compensation conditions were applied and 97.5% gave the best performance without post dispersion compensation. the effects of accumulated dispersion value and average dispersion value per transmission link for each link compensation condition were analyzed. When post dispersion compensation optimization was applied to five link span dispersion compensation conditions, 102.5% was given the best performance.

A Wafer Level Packaged Limiting Amplifier for 10Gbps Optical Transmission System

  • Ju, Chul-Won;Min, Byoung-Gue;Kim, Seong-Il;Lee, Kyung-Ho;Lee, Jong-Min;Kang, Young-Il
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.3
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    • pp.189-195
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    • 2004
  • A 10 Gb/s limiting amplifier IC with the emitter area of $1.5{\times}10{\mu}m^2$ for optical transmission system was designed and fabricated with a AIGaAs/GaAs HBTs technology. In this stud)', we evaluated fine pitch bump using WL-CSP (Wafer Level-Chip Scale Packaging) instead of conventional wire bonding for interconnection. For this we developed WL-CSP process and formed fine pitch solder bump with the $40{\mu}m$ diameter and $100{\mu}m$ pitch on bonding pad. To study the effect of WL-CSP, electrical performance was measured and analyzed in wafer and package module using WL-CSP. In a package module, clear and wide eye diagram openings were observed and the riselfall times were about 100ps, and the output" oltage swing was limited to $600mV_{p-p}$ with input voltage ranging from 50 to 500m V. The Small signal gains in wafer and package module were 15.56dB and 14.99dB respectively. It was found that the difference of small signal gain in wafer and package module was less then 0.57dB up to 10GHz and the characteristics of return loss was improved by 5dB in package module. This is due to the short interconnection length by WL-CSP. So, WL-CSP process can be used for millimeter wave GaAs MMIC with the fine pitch pad.