• 미생물학회지
• /
• 제30권5호
• /
• pp.333-338
• /
• 1992

Saccharomyces cerevisiae 의 mother cell과 daughter cell 의 연결 부위의 원형질막 바로 안쪽에 존재하는 10-nm filament ring 은 세포형태 형성과정에 중요한 역할을 하리라 간주되나 그 명확한 생성기작과 기능은 밝혀지지 않았다. 본연구에서는 CDC12 유전자로부터 gene fusion technique 을 이용하여 CDC12 단백질을 만들고 이로부터 항체를 형성하였다. 이항체를 이용하여 10-nm filament ring 의 생성기작과 기능에 대하여 연구하였다. 그 결과 CDC12 단백질은 cell cycle 전주기동안 항상 정이되나 bud 가 나오기 바고 직전에 bud 가 나올 부위에 polymerization 되었다가 세포질분열 바로 직후에 unpolymerization 되며 cytoskeletal element 의 일종인 actin 과는 무관하게 행동하는 건이 밝혀졌다. 이러한 10-nm filament 는 bud 가 나올 부위의 올바른 선정과 세포질 분열에 중요한 역할을 하리라 간주된다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
• /
• pp.119-122
• /
• 2004

This paper discovers that we form holographic grating in AsGeSeS thin film. Holographic grating is not developed in the length of 10,20,40nm, while it is formed in the thin film of 80nm though it shows very low diffraction efficiency. On the contrary, holographic grating is established in every thin film of Ag(10nm)/AsGeSeS(10,20,40,80nm). Lattice in 10,20 nm thin film builds up, and immediately disappears. In the case of 40nm thin film, even if holographic grating is made up, it seems to have a low diffraction efficiency. Apart from 10,20,40nm, it shows the highest diffraction efficiency in the thin film of 80nm.

• 한국광학회지
• /
• 제8권6호
• /
• pp.450-455
• /
• 1997

Nd:YAG 레이저 제2고조파로 여기되는 Z자형 공진기 구조의 펄스동작 Ti:sapphire 레이저가 개발되었다. 반사율 18%의 출력거울과 3mJ의 여기에너지에서 스펙트럼 반치폭은 90 nm, 파장 가변영역은 740~860 nm에 걸쳐 약 120 nm였다. 복굴절 필터를 설치하여 4 nm의 출력 스펙트럼 반치폭에 $\365mu$J의 출력에너지를 얻어 복구절 필터를 사용하지 않았을 경우보다 약 10배의 발진효율 개선효과를 얻었고, 파장 가변영역은 출력변동율이 $\pm$10%를 넘지 않는 범위에서 720~880 nm까지 약 160 nm로 넓어지는 결과를 얻었다.

• Journal of Ceramic Processing Research
• /
• 제22권1호
• /
• pp.114-120
• /
• 2021

A hybrid structure of Mn (2.59 wt.%) doped SnO2 (MTO)/Ag/MTO films with refractive index matching layers (IMLs) was deposited on PET substrate by a RF/DC magnetron sputtering method at room temperature. To match the refractive index (n) of MTO/Ag/MTO/PET film, high and low refractive index materials of MTO (n = 2.02) and SiO2 (n = 1.52) were placed between MTO/Ag/MTO and PET substrate, respectively. In order to evaluate the effect of IMLs on the reflectivity and color variation, an optical simulation program, Essential Macleod Program (EMP) was adopted, in advance. From EMP simulation, the multilayer film of MTO (40 nm)/Ag (13 nm)/MTO (40 nm) with optimized IMLs of SiO2 (120 nm)/MTO (10 nm) shows the excellent optical transmittance above 86.1% at the 550 nm wavelength, and the pattern visible defect was reduced as compared with the reference film of MTO/Ag/MTO/PET film without IMLs. From the bending test, the multilayer film of MTO (40 nm)/Ag (13 nm)/MTO (40 nm)/SiO2 (90 nm)/MTO (10 nm)/PET showed excellent flexible properties. There was only 10% resistance variation under 10,000 bending cycle with curvature radius of 5 mm.

• 한국전기전자재료학회논문지
• /
• 제19권9호
• /
• pp.873-877
• /
• 2006

We have fabricated top omission organic light emitting diodes with transparent Ba/Ag double layer cathodes deposited by using thermal evaporation method. The device structure was $glass/Ni(200nm)/2-TNATA(15 nm)/{\alpha}-NPD(15nm)Al_{q3}:C545T\;(1%,\;35nm)/BCP(5nm)/Ba(10nm)/Ag(8nm)$. The optical transmittance of the Ba(10 nm)/Ag(8 nm) layer was over 60 % in the visible wavelength region. The maximum efficiency of the device was $13.7\;cd/A\;at\;0.69\;mA/cm^{2}$ and the efficiency of over 10 cd/A was achieved at wide range of current densities and luminances.

• ETRI Journal
• /
• 제23권1호
• /
• pp.1-8
• /
• 2001

The performance of a long wavelength-band erbium-doped fiber amplifier (L-band EDFA) using 1530nm-band pumping has been studied. A 1530nm-band pump source is built using a tunable light source and two C-band EDFAs in cascaded configuration, which is able to deliver a maximum output power of 23dBm. Gain coefficient and noise figure (NF) of the L-band EDFA are measured for pump wavelengths between 1530nm and 1560nm. The gain coefficient with a 1545nm pump is more than twice as large as with a 1480nm pump. It indicates that the L-band EDFA consumes low power. The noise figure of 1530nm pump is 6.36dB at worst, which is 0.75dB higher than that of 1480nm pumped EDFA. The optimum pump wavelength range to obtain high gain and low NF in the 1530nm band appears to be between 1530nm and 1540nm. Gain spectra as a function of a pump wavelength have bandwidth of more than 10nm so that a broadband pump source can be used as 1530nm-band pump. The L-band EDFA is also tested for WDM signals. Flat Gain bandwidth is 32nm from 1571.5 to 1603.5nm within 1dB excursion at input signal of -10dBm/ch. These results demonstrate that 1530nm-band pump can be used as a new efficient pump source for L-band EDFAs.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.253-253
• /
• 2010

유리 기판 상에 시스템 온 패널과 같은 차세대 디스플레이 구현과 평판형 디스플레이의 문제점 해결을 위하여 비휘발성 메모리 소자 등의 전자 소자 집적화와 빠른 구동 속도를 가진 박막트랜지스터가 요구된다. 본 논문에서는 비휘발성 메모리 소자에서 MONOnS 각 layer층의 두께 따른 특성에 대한 연구를 진행하였다. 실험은 ONO 구조를 12.5nm/35nm/2.7nm, 12.5nm/20nm/2.3nm, 8.5nm/10nm/2.3nm, 6.5nm/10nm/1.9nm 의 두께로 증착하였다. ${\Delta}VFB$, Retention time, capacitance을 측정하여 oxide/Nitride/Oxynitride 층의 두께 변화를 통해 최적화된 tunneling layer와 charge storage layer, 그리고 blocking layer의 두께를 알 수 있다.

• Bulletin of the Korean Chemical Society
• /
• 제30권10호
• /
• pp.2299-2302
• /
• 2009

By controlling the number of electrons transferred to the emitting layer, highly efficient three-wavelength WOLEDs were fabricated. Such WOLEDs are different from those made using simple stacking of RGB emitting layers in that the movement distribution of electrons transferred to emitting layer could be adjusted using the difference in LUMO energy level and that lights of all 3 wavelengths could be emitted through appropriate arrangement of RGB emitting layers. WOLED device with the structure of m-MTDTA (40 nm)/NPB (10 nm)/ Coumarin6 doped $Alq_3$ (3%) (8 nm)/ Rubrene doped NPB (5%) (15 nm)/NPB (2 nm)/ DPVBi (20 nm)/$Alq_3$ (20 nm)/LiF (1 nm)/Al (200 nm) showed high luminance efficiency of 8.9 cd/A and color purity of (0.31, 0.40). In addition, WOLED device with the thickness of non-doped NPB layer increased from 2 nm to 3 nm to increase blue light emission showed a luminance efficiency of 7.6 cd/A and color purity of (0.28, 0.36).

• 대한금속재료학회지
• /
• 제47권5호
• /
• pp.322-329
• /
• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• Transactions on Electrical and Electronic Materials
• /
• 제10권1호
• /
• pp.28-30
• /
• 2009

We have studied organic layer-thickness dependent electrical and optical properties of bottom- and top-emission devices. Bottom-emission device was made in a structure of ITO(170 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(100 nm), and a top-emission device in a structure of glass/Al(100 nm)/TPD(x nm)/$Alq_3$(y nm)/LiF(0.5 nm)/Al(25 nm). A hole-transport layer of TPD (N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine) was thermally deposited in a range of 35 nm and 65 nm, and an emissive layer of $Alq_3$ (tris-(8-hydroxyquinoline) aluminum) was successively deposited in a range of 50 nm and 100 nm. Thickness ratio between the hole-transport layer and the emissive layer was maintained to be 2:3, and a whole layer thickness was made to be in a range of 85 and 165 nm. From the current density-luminance-voltage characteristics of the bottom-emission devices, a proper thickness of the organic layer (55 nm thick TPD and 85 nm thick $Alq_3$ layer) was able to be determined. From the view-angle dependent emission spectrum of the bottom-emission device, the peak wavelength of the spectrum does not shift as the view angle increases. However, for the top-emission device, there is a blue shift in peak wavelength as the view angle increases when the total layer thickness is thicker than 140 nm. This blue shift is thought to be due to a microcavity effect in organic light-emitting diodes.