• Journal of Oral Medicine and Pain
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• v.30 no.4
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• pp.427-432
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• 2005

This study have been compared and analyzed voice parameter under the condition of normal voice and auditory condition(noise and music) for 29 patients of orofacial pain and 31 normal people to investigate voice feature and vocal variation for auditory condition of orofacial pain patient. 1. Compared to normal voice, orofacial pain patient showed lower and unstable voice feature which has low F0 rate and high jitter and shimmer rate. 2. Voice of orofacial pain patient showed more relaxed and stable voice feature with low F0 and shimmer rate in the music condition than noise condition. 3. Normal people's voice has no significant difference between music and noise condition even though it has high F0 rate under the noise condition. As a result, orofacial pain patient showed difference of feature and different response for external auditory condition compared to normal voice. Providing of positive emotional environment such as music could be considered for better outcome of oral facial pain patient's functional disability.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.4 s.346
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• pp.16-22
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• 2006

Gigabit transimpedance amplifiers are realihzed in submicron CMOS technologies for Gigabit Ethernet applications. The regulated cascode technique is exploited to enhance the bandwidth and noise performance simultaneously so that it can isolate the large input parasitic capacitance including photodiode capacitance from the determination of the bandwidth. The 1.25Gb/s TIA implemented in a 0.6um CMOS technology shows the measured results of 58dBohm transimpedance gain, 950MHz bandwidth for a 0.5pF photodiode capacitance, 6.3pA/sqrt(Hz) average noise current spectral density, and 85mW power dissipation from a single 5V supply. In addition, a 10Gb/s TIA is realized in a 0.18um CMOS incorporating the RGC input and the inductive peaking techniques. It provides 59.4dBohm transimpedance gain, 8GHz bandwidth for a 0.25pF photodiode capacitance, 20pA/sqrt(Hz) noise current spectral density, and 14mW power consumption for a single 1.8V supply.

• Journal of the Korean Magnetics Society
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• v.6 no.4
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• pp.264-271
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• 1996

A magnetically shielded room has been constructed for biomagnetic applications. The room has internal dimensions of $2\;m(length){\times}2\;m(width){\times}2.5\;m(height)$ and it consists of high permeability Mumetal and high conductivity alummum, utilizing ferromagnetic shielding and eddy current shielding. The de shielding factor around the center of the room is above 60 dB, and the ac shielding factors at 1 and 10 Hz are larger than 60 and 80 dB, respectively. The internal magnetic field noise at 1 Hz is $500\;fT/{\sqrt}Hz$ and at 10 Hz is $100\;fT/{\sqrt}Hz$, and the field gradient noise at 1 Hz is below $7\;fT/cm{\sqrt}Hz$. Successful measurements of cardiomagnetic fields usmg SQUID magnetometer and neuromagnetic fields using SQUID gradiometer have been done.

• ETRI Journal
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• v.26 no.6
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• pp.583-588
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• 2004

In this paper we investigate the effect of a shield metal line inserted between adjacent bit lines on the refresh time and noise margin in a planar DRAM cell. The DRAM cell consists of an access transistor, which is biased to 2.5V during operation, and an NMOS capacitor having the capacitance of 10fF per unit cell and a cell size of $3.63{\mu}m^2$. We designed a 1Mb DRAM with an open bit-line structure. It appears that the refresh time is increased from 4.5 ms to 12 ms when the shield metal line is inserted. Also, it appears that no failure occurs when $V_{cc}$ is increased from 2.2 V to 3 V during a bump up test, while it fails at 2.8 V without a shield metal line. Raphael simulation reveals that the coupling noise between adjacent bit lines is reduced to 1/24 when a shield metal line is inserted, while total capacitance per bit line is increased only by 10%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.545-549
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• 2010

Low-frequency noise (1/f noise) has been measured in order to analyze the Vth instability of ZnO TFTs having two different active layer thicknesses of 40 nm and 80 nm. Under electrical stress, it was found that the TFTs with the active layer thickness of 80 nm shows smaller threshold voltage shift (${\Delta}V_{th}$) than those with thickness of 40 nm. However the ${\Delta}V_{th}$ is completely relaxed after the removal of DC stress. In order to investigate the cause of this threshold voltage instability, we accomplished the 1/f noise measurement and found that ZnO TFTs exposed the mobility fluctuation properties, in which the noise level increases as the gate bias rises and the normalized drain current noise level($S_{ID}/{I_D}^2$) of the active layer of thickness 80 nm is smaller than that of active layer thickness of thickness 40 nm. This result means that the 80 nm thickness TFTs have a smaller density of traps. This result correlated with the physical characteristics analysis performmed using XRD, which indicated that the grain size increases when the active layer thickness is made thicker. Consequently, the number of preexisting traps in the device increases with decreasing thickness of the active layer and are related closely to the $V_{th}$ instability under electrical stress.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.1
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• pp.55-62
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• 1983

The error rate performance of phase shift Keyed(PSK) signal has been evaluated in terms of carrier-to-noise ratio(CNR), carrier-to-interferer ratio(CIR), impulsive index, and the phase difference between signal and interferer in the environment of cochannel PSK inter-ference and impulsive noise. We hays derived a general equation of the probability density function (p.d.f.) of output of coherent phase detector. And the error rate of the received binary PSK(BPSK) signal has been numerically evaluated. The graphic results show us that the best case is the situation of the signal and the inter- ferer meet with orthogonal phase.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.137-139
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• 2005

본 논문에서는 30W급 스위칭형 직류전원장치 (Switching Mode Power Supply : SMPS)에 준공진형 프라이 백 스위칭 레귤레이터(quasi-resonant flyback switching regulator)를 적용하여 방사노이즈(radiation-noise)를 억제한 사례에 대하여 설명하고 있다. 기존의 PI사(社)의 TOP IC 시리즈$^{[1]}$와 같이 보편적으로 사용되고 있는 일명, 하드 스위칭(hard-switching)형 레귤레이터를 사용할 경우, 고속 스위칭시에 스위칭 손실(switching loss)과 스위칭 노이즈(switching noise)가 발생한다. 이로 인하여 SMPS의 발열에 따른 효율저화와 방사 노이즈에 의한 전파방해 등이 문제점이 된다. 본 논문에서는 일본의 Sanken사(社)에서 개발/시판중인 준공진형 스위칭 레귤레이터인 STR-F6000 IC 시리즈$^{[2]}$를 이용하여 프라이백 SMPS를 구성하여 방사노이즈를 저감하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.322-325
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• 2002

In this study, noise figures of 0.3 $\mu\textrm{m}$-GaAs MESFETs are predicted experimentally with different temperatures. Both the noise figure and the gate leakage current are obtained with wide range of temperatures(27$^{\circ}C$∼300$^{\circ}C$). From the results, gate leakage current increases with temperatures. It is expected that gate leakage current contributes directly to the increase of shot noise current. It is therefore highly recommended to apply an accurate noise analysis to the design of the devices and modules at high temperatures. Fini,Uy the relation between the gate currents resulting in the increase of noise and the noise figures of submicron GaAs MESFETs are traced with different temperatures

• Progress in Superconductivity
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• v.4 no.1
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• pp.68-73
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• 2002

We have fabricated YBCO SQUID 1st order gradiometers on $30^{\circ}$STO bicrystal substrate. The pickup coil size was 3.8mm$\times$3.8mm and baseline was 5mm. Three types of SQUID gradiometer were designed and tested for unshielded operation; solid pickup coil, pickup coil consisting of 4 parallel $ 50\mu\textrm{m}$-wide loops, and solid pickup coil with flux dam. We have investigated external magnetic field dependence of the SQUID gradiometers on the magnetic field noiseproperties. Significant increase of low frequency noise with the application of static field has been observed in the case of parallel and flux dam type pickup coil above threshold field of $1.3 \mu$T. Magnetic field noise at 1 Hz measured in the magnetically shielding room was 30, 165, 480 fTcm／sup -1／Hz／sup -1/2／ for solid type and slot type and parallel loops type, respectively.

• Progress in Superconductivity
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• v.8 no.1
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• pp.33-39
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• 2006

We have developed a second-order double relaxation oscillation SQUID(DROS) gradiometer with a baseline of 35 mm, and constructed a poorly magnetically-shielded room(MSR) with an aluminum layer and permalloy layers for magnetocardiography(MCG). The 2nd-order DROS gradiometer has a noise level of 20 $fT/{\surd}Hz$ at 1 Hz and 8 $fT/{\surd}Hz$ at 200 Hz inside the heavily-shielded MSR with a shielding factor of $10^3$ at 1 Hz and $10^4-10^5$ at 100 Hz. The poorly-shielded MSR, built of a 12-mm-thick aluminum layer and 4-6 permalloy layers of 0.35 mm thickness, is 2.4mx2.4mx2.4m in size, and has a shielding factor of 40 at 1 Hz, $10^4$ at 100 Hz. Our 64-channel second-order gradiometer MCG system consists of 64 2nd-order DROS gradiometers, flux-locked loop electronics, and analog signal processors. With the 2nd-order DROS gradiometers and flux-locked loop electronics installed inside the poorly-shielded MSR, and with the analog signal processor installed outside it, the noise level was measured to be 20 $fT/{\surd}Hz$ at 1 Hz and 8 $fT/{\surd}Hz$ at 200 Hz on the average even though the MSR door is open. This result leads to a low noise level, low enough to obtain a human MCG at the same level as that measured in the heavily-shielded MSR. However, filters or active shielding is needed fur clear MCG when there is large low-frequency noise from heavy air conditioning or large ac power consumption near the poorly-shielded MSR.