• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.1
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• pp.39-46
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• 2005

We fabricate and analyze fully depleted optical thyristors (DOTs) using quarter wavelength reflector stacks (QWRS). QWRS are employed as bottom mirrors to enhance the emission efficiency as well as the optical sensitivity. In order to analyze their switching characteristics, S-shape nonlinear current-voltage curves are simulated and the reverse full-depletion voltages (Vneg's) of DOTs are obtained as function of semiconductor parameters by using a finite difference method (FDM). The fabricated DOTs show sufficient nonlinear s-shape I-V characteristics and switching voltage changes of these devices with and without bottom mirrors show 1.82 V and 1.52 V, respectively. Compared to a conventional DOT, this device with the bottom mirrors shows about 20％ and 46% enhancement in switching voltage change and spontaneous emission efficiency, respectively.

• Journal of IKEEE
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• v.12 no.3
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• pp.131-137
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• 2008

A silicon Fabry-Perot tunable thermo-optic filter for WDM using the thin film silicon coating is proposed and experimented. The filter is implemented by using the CMP process and polishing both sides of the commercial silicon wafer with normal thickness of 100${\mu}m{\pm}$1%. The filter also has 2-layer or 3-layer dielectrics thin film coating mirror which are alternated ${\lambda}$/4 layers of $SiO_2$($n_{low}$=1.44) and a-Si($n_{high}$=3.48) for the central wavelength of 1550nm by RF sputtering. The experiment shows that FSR is 3.61nm and FWHM is 0.56nm and the finesse is 6.4 for 2-layer mirror with the reflection of 61%, and that FSR is 3.36nm and FWHM is 0.13nm and the finesse is 25.5 for 3-layer mirror with the reflection of 89%. According to thermo-optic effect, the transmitted central wavelength of 1549.73nm at $23^{\circ}C$ is shifted to 1550.91nm at $30^{\circ}C$ and 1553.46nm at $60^{\circ}C$ for 2-layer mirror, and the transmitted central wavelength of 1549.83nm at $23^{\circ}C$ is shifted to 1550.92nm at $30^{\circ}C$ and 1553.07nm at $60^{\circ}C$ for 3-layer mirror.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.180-181
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• 2000

일반적으로 광통신이나 고출력 레이저에 사용되는 광학 소자들 중 고반사율의 거울은 특정 파장과 특정 각도에 대해서만 민감하도록 설계되어 있다. 이것을 여러 파장의 빛을 여러 각도로 입사시키더라도 높은 반사율을 얻는다면, 소자의 효율을 향상시키는데 상당한 효과를 볼 수 있다. 은이나 알루미늄의 금속박막으로 제작되는 금속 거울은 제작하기 쉽고 입사파장과 금속의 재질에 관련되어 90 %이상의 반사율을 갖지만, 특정한 각도에서는 빛이 금속 내에 있는 자유 전자들에 의해 상당량 흡수되어 버린다. 따라서 금속 거울은 에너지의 손실이 적어야 하는 광통신이나 고출력 레이저와 같은 응용분야에는 사용될 수 없다. 이러한 흡수가 거의 없는 유전체 거울은 고굴절률과 저굴절률의 층이 λ$_{0}$/4의 광학 두께를 가지고 주기적으로 반복되는 구조를 갖는다. 이러한 λ$_{0}$/4 유전체 다층 박막계는 1-차원 photonic 결정 구조와 동일하게 다룰 수 있는데, 1-차원 photonic 결정 구조가 모든 입사각도에 대해서 전방향 반사를 보인다는 것을 이론과 실험적으로 증명하였다[1-3]. (중략)

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.26-27
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• 2000

고휘도 다이오드(Superluminescent Diodes : SLD)는 fiber gyroscope의 광원으로서 가장 적당한 소자로 알려져 있다$^{(1)}$ . 본 연구는 실제의 광섬유 자이로 스코프에 적용하기 위하여 활성층의 발진파장이 1.55$mu extrm{m}$인 SLD의 제작을 목적으로 하고 있다. SLD제작의 핵심은 거울면에서의 반사도를 낮추어 거울면의 반사에 의하여 일어나는 발진을 억제하는 것으로, 이를 위하여 단면이 각을 가진 stripe$^{(2)}$ , 계면의 무반사 코팅(antireflection coating : AR coating)$^{(3)}$ , window buried heterostructure$^{(4)}$ , unpumped absorbing region$^{(5)}$ , bent-buried absorbing region$^{(6)}$ 등과 같은 방법이 이용이 되고 있다 (중략)

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.7 s.349
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• pp.1-6
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• 2006

We show for the first time the optical properties of the selectively oxidized vertical cavity laser (VCL) - depleted optical thyristor (DOT), which has not only a low threshold current, but also a high sensitivity to the optical input light. In order to analyze their switching characteristics, nonlinear s-shaped current-voltage characteristics are calculated and the reverse full-depletion voltages (Vneg's) are obtained as function of semiconductor parameters by using a finite difference method (FDM). The selectively oxidized PnpN VCL-DOT clearly shows the nonlinear s-shaped current-voltage and lasing characteristics. A switching voltage of 5.24 V, a holding voltage of 1.50 V, a spectral response at 854.5 nm, and a very low threshold current of 0.65 mA is measured, making these devices attractive for optical processing applications.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.40-46
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• 2006

Latching optical switches and optical logic gates AND and OR are demonstrated, for the first time, by the monolithic integration of a vertical cavity lasers with depleted optical thyristor structure, which have not only a low threshold current with 0.65mA, but also a high on/off contrast ratio more than 50dB. By simple operating technique with changing a reference switching voltage, this single device operates as two logic functions, optical logic AND and OR. The thyristor laser fabricated using the oxidation process achieved a high optical output power efficiency and a high sensitivity to the optical input light.