• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1861-1863
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• 1999

The polarization gratings were fabricated in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film applicable to a medium of the polarization holography and their diffraction efficiencies$(\eta)$ were monitored by real-time measurement. The polarization gratings prepared consisted of the multi-layer thin film system. As a method to improve the $\eta$, we have investigated its change for the field effect. As the results, the value of $\eta$ strongly depended on the voltage applied to the film and the maximum value, $\eta_{max}$ was enhanced to be about 4 times in comparison with that of not biased sample. In addition, an increase in the $\eta$ can be estimated to be due to additional creation of new defects caused by the electric field across the film.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.9
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• pp.423-428
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• 2006

We have been carried out the two-beam interference method to form the diffraction grating on chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ thin films for Holography Data Storage (HDS). In the present work, we have been formed holographic diffraction gratings using He-Ne laser (632.8nm) under different Polarization state combinations (intensity polarization holography, phase polarization holography). It was obtained the diffraction grating efficiency by 11st order intensity and investigated the formed grating structure using Atomic Force Microscopy (AFM). As the results, it is shown that the diffraction efficiency of (P: P) polarized recording was maximum 2.4% and we found that its value was rather higher than that of other-polarized recordings. From the results, it is confirmed that the efficient holographic grating formation on amorphous chalcogenide $AS_{40}Se_{15}S_{35}Ge_{10}$ films depend on both the spatial variation of intensity and the polarization state of the incident field pattern.

• Korean Journal of Crystallography
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• v.12 no.4
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• pp.233-238
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• 2001

X-ray microdiffraction which uses x-ray beam focused down to a micron size from synchrotron radiation sources allow precision measurements of local orientation and strain variations in polycrystalline materials. Using x-ray microdiffraction setup at Pohang Light Source, we investigated the tex-ture of Cu interconnects with various widths on Si wafer by collecting Laue images and focused to about 2×3㎛ ² in size. Our results show that 1㎛ wide Cu interconnect had grains in rather ran- dom orientation. On the other hand the 20㎛ wide interconnects showed a 〈111〉fiber texture near the center. The grains were 2∼5㎛ long at the 1㎛ wide interconnect and 6∼8㎛ in size at the 20㎛ wide interconnect.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.399-399
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• 2012

II-V 족 화합물 반도체인 황화카드뮴(CdS)은 상온에서 2.42 eV의 밴드갭을 갖는 직접 천이형 물질로서 CdTe 또는 $CuInSe_2$와 같은 박막형 태양전지의 투과층(window layer)으로 널리 사용되고 있다. CdS 박막은 전자빔 증착법(e-beam evaporation), 화학용액증착법(chemical bath deposition), 열분해법(spray pyrolysis), 스퍼터링법(sputtering) 등으로 제작되고 있다. 이 중 스퍼터링법의 경우, 다른 증착법에 비해 조작이 간단하고 넓은 면적에서 균일한 박막을 증착할 수 있을 뿐만 아니라, 박막두께 조절이 용이하다. 따라서 본 실험에서는 RF 마그네트론 스퍼터링법으로 증착된 CdS 박막의 기판온도 및 열처리 온도변화에 따른 구조적 및 광학적 특성을 조사하였다. 기판은 RCA 기법으로 세정된 Corning Eagle 2000 유리 기판을 사용하였다. 박막 공정은 초기 진공 $1{\times}10^{-6}Torr$ 상태에서 20 sccm의 Ar 가스를 주입하고 100 W의 RF 파워, 7 mTorr의 공정 압력에서 기판 온도를 $200^{\circ}C$부터 $500^{\circ}C$까지 변화시키면서 수행하였다. 증착된 CdS 박막은 질소 분위기의 가열로(furnace)를 이용해 $300-500^{\circ}C$ 온도에서 30분간 열처리되었다. 시료들의 표면 형상은 scanning electron microscope를 사용하여 관찰하였으며, UV-vis-NIR spectrophotometer를 사용하여 400-1,000 nm 파장영역에서의 투과율을 측정하였다. 그리고 X-선 회절분석(X-Ray Diffraction)으로 결정구조를 조사하고 결정립 크기를 산출하였다.

• Korean Journal of Crystallography
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• v.6 no.2
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• pp.69-74
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• 1995

GaAs tilt grain boundaries were propared by growing GaAs epilayers on Ge bicrystals by an organometallic vapor phase epitaxy (OMVPE) method ∑ =9 tilt grain boundaries were produced when two different first-order twin boundaries interacted with one another in GaAs epilayers. Structural investigations were performed for the coherent and second-order twin boundaries of GaAs by high-resolution transmission electron microscopy (HRTEM). Polarities of cross-boundary bondings were determined from the high-order Laue zone (HOLZ) lines in the (200) convergent beam disks : these were recorded from the two grains on either side of the boundaries, respectively, at particular diffraction conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.193-197
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• 2018

The ratio of the period of a diffractive element to the input beam size is a critical parameter in a diffractive beam shaper. We measured and calculated the Fraunhofer diffraction patterns of a periodic hologram with an input beam size similar to the period of the hologram. The measured intensities show very complicated patterns and are strongly dependent upon the center position of the laser beam relative to the hologram. Using a diffraction formula for a periodic hologram, we calculated the diffracted light intensities and fit them to the measured ones. The measured and calculated intensities are in good agreement even when the beam diameter of the incident laser is similar to the period of the hologram. We can therefore use this formula to estimate the output of a periodic beam shaper even under such an extreme condition.

• Korean Journal of Optics and Photonics
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• v.4 no.3
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• pp.252-259
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• 1993

A holosymmetric four-mirror system with unit magnification is designed for use in the micro-lithography using a deep ultraviolet wavelength of $0.248 {\mu}m$(KrF excimer laser line). In the holosymmetric system all orders of coma and distortion are zero. By applying this principle to the 4-spherical mirror system, we have obtained only one exact solution for the unit magnification holosymmetric four-spherical mirror system with all zero third order aberrations. For correction of the residual higher order aberrations of the system, aspherization is introduced keeping the holosymmetric properties. We have obtained near diffraction-limited performance for the wavelength of 0.248 pm within N.A. of 0.33 and image field diameter of 7.6 mm.

• Korean Journal of Optics and Photonics
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• v.30 no.3
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• pp.94-100
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• 2019

The near-field subwavelength squint-less focusing system of a phased array antenna is designed and demonstrated by numerical simulation. The Huygens-Fresnel principle is applied to numerical simulation for calculation of the phased array antenna at microwave frequency. It was shown that beam squinting can be eliminated, utilizing true-time optical delay lines based on a chirped fiber grating in the proposed system. Furthermore, subwavelength focusing with high numerical aperture can be achieved by considering the fact that the array elements of the phased-array antenna can be treated as diffractive elements in an optical lens system. Also, side lobes can be suppressed by decreasing the distance between element antennas to less than half of the wavelength.

• Publications of The Korean Astronomical Society
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• v.14 no.2
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• pp.123-128
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• 1999

The beam size and the antenna efficiency of TRAO 14m radio telescope were measured at 86.2, 98.0 and 115.2 GHz. The beam size was determined by deconvolving the azimuthal scanning data of the Venus. To test the accuracy of our deconvolution method, the beam size at 86.2 GHz was compared with that determined from the mapping data of SiO maser line and we found no difference between them. With above beam sizes, antenna efficiencies were calculated from the continuum measurements of Venus, Jupiter and Moon. The beam efficiencies at these frequencies are appeared to be 0.49, 0.45 and 0.41, respectively. On the other hand, we also suggest that an automatic focus setting can be adopted for TRAO radio telescope based on the gradual change of best focus with elevation.

• Proceedings of the Korea Crystallographic Association Conference
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• 2003.05a
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• pp.26-26
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• 2003

산업 폐기물로서 전량 매립되고 있는 styrene monomer (SM) 공정에서 발생되는 산화철 폐촉매를 사용하여 NiZn-페라이트를 합성하였고, 그 자기적 특성을 조사하였다. 평균입경 0.5㎛로 미분쇄된 산화철 폐촉매에 NiO 및 ZnO를 혼합하여 900℃에서 하소한후 1230℃에서 5시간 동안 소결하여 스핀넬형 페라이트 소결체를 얻었다. Ni/sub x/Zn/ub 1-x/Fe₂O₄(x=0.36, 0.50, 0.66) 및 (Ni/sub 0.5/Zn/sub 0.5/)/sub 1-y/Fe/sub 2+y/O₄(y=-0.02, 0, 0.02) 조성에 대하여 초투자율을 측정하였다. S-parameter를 측정하여 반사 감쇄량을 계산하였다. Ni/sub 0.5/Zn/sub 0.5/fe₂O₄ 조성의 경우 밀도 5.38 g/㎤ kHz에서의 초투자율이 59인 특성을 얻었다. 산화철 폐촉매를 이용하여 X-band 주파수 영역에서 높은 전자파 흡수능을 갖는 전파흡수체를 제조할 수 있음을 확인하였다. Ni/sub 0.5/Zn/sub 0.5/Fe₂O₄ 조성에 대하여 1100℃에서 하소한 분말을 사용하여 실리콘 고무에 복합시킨 후 전파흡수능을 측정하였다. 폐촉매에는 산화철 이외에 CeO₂가 주된 첨가물로 함유되어 있어서 페라이트의 합성 후에도 2차상으로서 존재하였다. 출발 원료인 산화철 폐촉매에 존재하는 K₂O 및 CeO₂를 제거하기 위하여 산처리와 분산제를 이용한 CeO₂ 분리과정을 행하였다. 정제된 산화철 폐촉매에 NiO 및 ZnO를 혼합하여 900℃에서 하소하여 스핀넬형 페라이트를 합성하고 1325℃에서 5시간 소결하였다. 위와 마찬가지로 Ni/sub x/Zn/sub 1-x/Fe₂O₄(x=0.36, 0.50, 0.66)과 (Ni/sub 0.5/Zn/sub 0.5/)/sub 1-y/Fe/sub 2+y/O₄(y=-0.02, 0, 0.02) 조성에 대하여 자기적 특성을 조사하였다.화된 중성자빔으로 측정하였다 BPC-Si를 구부려 슬랩의 곡률반경을 변화시키면서 단색기-시료-검출기가 평행파 반평행배치일 때 Cu(111), (200), (220), (311), (331), (420)면의 회절선을 측정하여 각 조건에서 분해능과 강도를 평가하였다.료의 가시적 변화를 통해 illumination angle 1.25mrad(Dose rate : 334 × 10³ e/sup -//sec·n㎡)일 경우 약 3초 이내에 비정질화가 시작됨을 알 수 있었고 이는 약 1 × 10/sup 6/ e/sup -//sec·n㎡ 의 전자선량에 해당되며 이를 기준으로 각각의 illumination angle에 대한 임계전자선량을 평가할 수 있었다. 실질적으로 Cibbsite와 같은 무기수화물의 직접가열실험 시 전자빔 조사에 의해 야기되는 상전이 영향을 배제하고 실험을 수행하려면 illumination angle 0.2mrad (Dose rate : 8000 e/sup -//sec·n㎡)이하로 관찰하고 기록되어야 함을 본 자료로부터 알 수 있었다.운동횟수에 의한 영향으로써 운동시간을 1일 6시간으로 설정하여, 운동횟수를 결정하기 위하여 오전, 오후에 각 3시간씩 운동시키는 방법과 오전부터 6시간동안 운동시키는 두 방법을 이용하여 품질을 비교하였다. 각 조건에 따라 운동시킨 참돔의 수분함량을 나타낸 것으로, 2회(오전 3시간, 오후 3시간)에 나누어서 운동시키기 위한 육의 수분함량은 73.37±2.02%를 나타냈으며, 1회(6시간 운동)운동시키기 위한 육은 71.74±1.66%을 나타내었다. 각각의 운동조건에서 양식된 참돔은 사육초기에는 큰 변화가 없었으나, 사육 5일 이후에는 수분함량이 증가하여 15일에는 76.40±0.14, 75.62±0.98%의 수분함량을 2회와 1회 운동시킨 참돔의 육에서 각각 나타났다. 운동횟수에 따른 지질함량은 2회 운동시킨 참돔은 5.83±2.08, 1회 운