• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.6
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• pp.1266-1272
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• 2012

An InGaZnO thin film transistor with different gate lengths and widths have been fabricated and their device degradations with device sizes have been also performed after negative gate bias stress. The threshold voltage and subthreshold swing have been decreased with decrease of gate length. However, the threshold voltages were increased with the decrease of gate lengths. The transfer curves were negatively shifted after negative gate stress and the threshold voltage was decreased. However, the subthreshold swing was not changed after negative gate stress. This is due to the hole trapping in the gate dielectric materials. The decreases of the threshold voltage variation with the decrease of gate length and the increase of gate width were believed due to the less hole injection into gate dielectrics after a negative gate stress.

• Journal of Internet Computing and Services
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• v.10 no.3
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• pp.51-60
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• 2009

This paper proposes a reliable 2-mode authentication framework for probabilistic key pre-distribution in Wireless Sensor Network (WSN) that guarantees the safe defense against different kinds of attacks: Hello flood attacks, Wormhole attacks, Sinkhole attack, location deployment attacks, and Man in the middle attack. The mechanism storing the trust neighbor IDs reduces the dependence on the cluster head and as the result; it saves the power energy for the authentication process as well as provides peer-to-peer communication.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.13-18
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• 2007

This paper presents the experimental findings on the different degradation mechanism which depends on the gate oxide thickness in lateral DMOS transistors. For thin oxide devices, the generation of interface states in the channel region and the trapped holes in the drift region is found to be the causes of the device degradation. For thick devices, the generation of interface states in the channel region is found to be the causes of the device degradation. We confirmed the different degradation mechanism using device simulation. From the comparison of device degradation under DC and AC stress, it is found that the device degradation is more significant under DC stress than one under AC stress. The device degradation under AC stress is more significant in high frequency. Therefore the hot carrier induced degradation should be more carefully considered in the design of RF LDMOS transistors and circuit design.

• Journal of The Geomorphological Association of Korea
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• v.18 no.3
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• pp.1-10
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• 2011

Sanbangsan and Yongmuri Beach as geosites are very wide areas, and tourists have accessed them via various courses; hence the need to double the number of geosite signs and disperse them at each point. The signs should read "Sanbangsan lava dome," "Yongmuri tuff ring," and "Relationship between the Sanbangsan lava dome and Yongmuri tuff ring." The contents of the sign should be systemic, simple, and clear because tourists have to read it in a short time. The viewpoint of the research area can be largely divided into Sanbangsan View, Yongmuri Beach View, Sanbangsan, and Yongmuri Beach View. Three of each viewpoint (total of 9 viewpoints) can be placed. In the geosite of Sanbangsan and Yongmuri Beach are 5 sub-theme views including the boundary sheet of Sanbangsan and Yongmuri tuff ring, xenolith basalt, marine pothole, tafoni, and crossed sedimentary layer. These sub-theme views are important in understating not only the geosite but the overall geopark as well, so they should be developed and utilized aggressively.