• Journal of Welding and Joining
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• v.17 no.2
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• pp.61-65
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• 1999

Because of the need for packages which accommodate high pin count, high density and high speed device, PBGA(plastic ball grid array) package gets more spotlight. But the substrate material which is used for PBGA package is in nature susceptible to moisture penetration. The objective of the study is to find out the path of delamination in the stacked structure of substrate. To increase the adhesion between the cooper laminate and PSR(photo solder resist) which is the weakest part, experiments were performed by changing parameters of printing pre-treatment and post-treatment process. As a result of experiments, the factor effects on the adhesion between the cooper laminate and PSR is caused by all of the pre-treatment and post-treatment condition. A considerable change was observed depending on the amount of UV irradiation after thermal cure which is typical of printing post-treatment condition rather than pre-treatment condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.378-378
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• 2011

본 연구에서는 ZnO 나노선 기판을 제작하여 그 위에 밴드갭이 낮은 물질인 CdS, CdSe를 증착시킨 후 p-type 반도체 물질인 CuSCN을 증착시켜 안정성이 향상된 양자점 감응형 태양전지를 제작하였다. ZnO 나노선 기판은 투명한 FTO 기판 위에 ZnO를 진공증착시켜 seed layer를 제작하고 그 위에 $10{\mu}m$정도의 길이의 나노와이어를 성장시킨 후, 밴드갭이 낮은 CdS, CdSe 물질과의 다중접합을 이용하여 제작하고, 이러한 나노선 구조위에 chemical solution deposition을 이용하여 ${\beta}$-CuSCN을 형성시켰다. 양자점 감응형 태양전지는 ZnO 나노선을 photoanode로 이용하고 ZnO 나노선은 암모니아수와 아연염을 이용한, 비교적 저온의 수열합성법을 통해 합성하였고, sensitizer로 쓰인 CdS, CdSe 물질은 CBD방식을 통하여 합성된 나노선 위에 in-situ로 접합시켰다. 또한, 기존의 액체전해질을 이용한 양자점 감응형 태양전지의 안정성을 향상시키기 위해 p-type의 반도체 물질인 CuSCN물질을 propyl sulfide를 이용, ${\sim}80^{\circ}C$의 열을 가하여 in-situ 방식으로 다공성 구조에 효율적으로 접합이 가능하도록 deposition하였다. 일반적으로, CuSCN film은 홀 전도체로서의 장점을 지닌 반면, 전도성이 낮은 단점이 있기 때문에 이를 향상시키기 위해서 첨가제를 이용, 농도에 따라서 전도도가 향상되고 셀의 성능이 향상되는 것을 확인하였다. 이와 같이 합성된 구조는 주사전자현미경(SEM), X-선 회절(XRD), 솔라시뮬레이터 등의 분석장비를 이용하여 태양전지로서의 특성을 분석하였다. 또한 안정성 평가를 위하여 시간에 따른 셀의 특성변화도 비교하였다.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.79-84
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• 2010

Formation of TSV (Through-Si-Via) with an Au seed layer and Cu filling to the via, simplification of bumping process for three dimensional stacking of Si dice were investigated. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process using $SF_6$ and $C_4F_8$ plasmas alternately. The vias were 40 ${\mu}m$ in diameter, 80 ${\mu}m$ in depth, and were produced by etching for 1.92 ks. On the via side wall, a dielectric layer of $SiO_2$ was formed by thermal oxidation, and an adhesion layer of Ti, and a seed layer of Au were applied by sputtering. Electroplating with pulsed DC was applied to fill the via holes with Cu. The plating condition was at a forward pulse current density of 1000 mA/$dm^2$ for 5 s and a reverse pulse current density of 190 mA/$dm^2$ for 25 s. By using these parameters, sound Cu filling was obtained in the vias with a total plating time of 57.6 ks. Sn bumping was performed on the Cu plugs without lithography process. The bumps were produced on the Si die successfully by the simplified process without serious defect.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.05a
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• pp.315-318
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• 2003

Recently, condenser tube which is used for a cooling system of automobiles is mainly manufactured by the conform extrusion but this method is inferior as compared with direct extrusion in productivity per the unit time and in the equipment investment. Therefore, it is essential for the conversion of direct extrusion with porthole die. The direct extrusion with porthole die can produce condenser tube which has the competitive power in costs and qualities compared with the existing conform extrusion. This study is designed to evaluate metal flow, welding pressure, extrusion load tendency of mandrel deflection that is affected by variation of porthole shape in porthole die. Estimation is carried out using finite element method under the non-steady state. Also this study was examined into the cause of mandrel fracture through investigating elastic deformation of mandrel during the extrusion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.514-519
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$as a dielectrical isolation layer a SDB SOI Hall sensor without pn junction has been fabricated on the Si/ $SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to 30$0^{\circ}C$ the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than $\pm$6.7$\times$10$_{-3}$ and $\pm$8.2$\times$10$_{-4}$$^{\circ}C$ respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.29-33
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than ${\pm}6.7{\times}10^{-3}/^{\circ}C$ and ${\pm}8.2{\times}10^{-4}/^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and high-temperature operation.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.8 s.239
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• pp.1146-1152
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• 2005

Recently, multi cell tube which is used for a cooling system of automobiles is mainly manufactured by the conform extrusion but this method is inferior as compared with direct extrusion in productivity per the unit time and in the equipment investment. Therefore, it is essential for the conversion of direct extrusion with porthole die. The direct extrusion with porthole die can produce multi cell tube which has the competitive power in costs and qualities compared with the existing conform extrusion. This study is designed to evaluate metal flow, welding pressure, extrusion load, tendency of mandrel deflection that is affected by variation of porthole shape in porthole die. Estimation is carried out using finite element method under the non-steady state. Also this study was examined into the cause of mandrel fracture through investigating elastic deformation of mandrel during the extrusion.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.4 s.193
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• pp.102-108
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• 2007

The characteristic properties of aluminum, high strength stiffness to weight ratio, good formability, good corrosion resistence, and recycling potential make it the ideal candidate to replace heavier materials in the car to respond to the weight reduction demand within the automotive industry. In this paper, FE simulation was carried out to design an appropriate extrusion die for the automobile control arm. Based on the FE simulation result, a new die design has been proposed for uniform material flow in the cross section of extruded product. And then the welding pressure, extrusion load, and the tendency of mandrel deflection were estimated to verify high quality. In the extrusion experiment, it was possible to produce sound product without defects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.565-568
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• 2000

This paper describes on the temperature characteristics of a SDB(silicon-wafer direct bonding) SOI(silicon-on-insulator) Hall sensor. Using the buried oxide $SiO_2$ as a dielectrical isolation layer, a SDB SOI Hall sensor without pn junction isolation has been fabricated on the Si/$SiO_2$/Si structure. The Hall voltage and the sensitivity of the implemented SOI Hall sensor show good linearity with respect to the applied magnetic flux density and supplied current. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(temperature coefficient of the offset voltage) and TCS(temperature coefficient of the product sensitivity) are less than $\pm 6.7$$\times$$10^{-3}$/$^{\circ}C$ and $\pm 8.2$$\times$$10^{-4}$/$^{\circ}C$respectively. These results indicate that the SDB SOI structure has potential for the development of a silicon Hall sensor with a high-sensitivity and hip high-temperature operation.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.7
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• pp.53-61
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• 2004

Condenser tube which is used for a cooling system of automobiles is mainly manufactured by conform extrusion. However, direct extrusion using porthole die in comparison with conform extrusion has many advantages such as improvement of productivity, reduction of production cost etc. In general, the porthole die extrusion process is useful for manufacturing long tubes with hollow sections and consists of three stages(dividing, welding and forming stages). Especially, Porthole die for producing condenser tube is very complex. Thus, in order to obtain the detailed mechanics, to assist in the design of proper die shapes and sizes, and to improve the quality of products, porthole die extrusion should be analyzed in as non-steady state as possible. This paper describes FE analysis of non-steady state porthole die extrusion for producing condenser tube with multi-hole through 3D simulation in the non-steady state during the entire process to evaluate detailed metal flow, temperature distribution, welding pressure and extrusion load. Also to validate FE simulation of porthole die extrusion, a comparison of simulation and experiment results was presented in this paper.