• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.77-78
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• 2010

• Journal of the Korean Magnetics Society
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• v.21 no.3
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• pp.83-87
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• 2011

We have analyzed the torque signals measured in synthetic antiferromagnetic (SAF) coupled CoFeB/Ru/CoFeB thin film, which signals were drastically changed at flopping field ($H_F$) and saturation field ($H_s$). The minimum value of negative uniaxial anisotropy constant ($-\;K_1$) was appeared at HF. The $-\;K_1$ was due to the zero net magnetization by the antiferromagnetic coupling between two ferromagnetic layers. Whereas, the biaxial anisotropy constant (K2) was induced in the field range of $H_F$ < H < $H_s$. The induced $K_2$ was originated from deviation angles between magnetization directions of two ferromagnetic layers. And at H > $H_s$, intrinsic uniaxial anisotropy constant of CoFeB layer was observed. These change of the anisotropy constant with magnetic field was explained by the magnetization process of two ferromagnetic layers based on Stoner-Wohlfarth model calculation for SAF thin film.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.164-165
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• 2002

기록저장 장치의 고 기록밀도에 따라서 급성장을 하고 있는 자기 기록매체에 대하여 자장 센서의 크기의 감소는 외부 누설자계의 영향으로 많은 노이즈와 함께 안정한 스핀 작동을 구현할 수 없게 된다. 이를 해결하기 위해 반강자성적 결합을 하고 있는 합성형 반강자성적 다층막을 고정층에 삽입하여 고정층과 자유층간의 정자기적 영향을 억제하는 방법과 함께 높은 GMR비를 얻음으로서 노이즈보다 높은 신호출력을 얻는 방법이 있다. (중략)

• Journal of the Korean Magnetics Society
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• v.17 no.3
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• pp.124-127
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• 2007

Magnetic tunnel junctions (MTJs), which consisted of amorphous CoFeSiB layers, were investigated. The CoFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with an emphasis given on understanding the effect of the amorphous free layer on the switching characteristics of the MTJs. CoFeSiB has a lower saturation magnetization ($M_s\;:\;560\;emu/cm^3$) and a higher anisotropy constant ($K_u\;:\;2800\;erg/cm^3$) than CoFe and NiFe, respectively. An exchange coupling energy ($J_{ex}$) of $-0.003\;erg/cm^2$ was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the Si/$SiO_2$/Ta 45/Ru 9.5/IrMn 10/CoFe 7/$AlO_x$/CoFeSiB 7 or CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60 (in nm) MTJs structure, it was found that the size dependence of the switching field originated in the lower $J_{ex}$ using the experimental and simulation results. The CoFeSiB synthetic antiferromagnet structures were proved to be beneficial for the switching characteristics such as reducing the coercivity ($H_c$) and increasing the sensitivity in micrometer size, even in submicrometer sized elements.

• Journal of the Korean Magnetics Society
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• v.15 no.6
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• pp.315-319
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• 2005

To obtain low switching field ($H_{SW}$) we introduced amorphous ferromagnetic $Co_{70.5}Fe_{4,5}Si_{15}B_{10}$ single and synthetic antiferromagnet (SAF) free layers in magnetic tunnel junctions (MTJs). The switching characteristics for MTJs with structures $Si/SiO_2/Ta$ 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/CoFeSiB 7 or CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60 (in nm) were investigated and compared to MTJs with $Co_{75}Fe_{25}$ and $Ni_{80}Fe_{20}$ free layers. CoFeSiB showed a lower saturation magnetization of $560 emu/cm^3$ and a higher anisotropy constant of $2800\;erg/cm^3$ than CoFe and NiFe, respectively. An exchange coupling energy ($J_{ex}$) of $-0.003erg/cm^2$ was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the CoFeSiB single and SAF free layer MTJs, it was frond that the size dependence of the $H_{SW}$ originated from the lower $J_{ex}$ experimentally and by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. The CoFeSiB SAF structures showed lower $H_{SW}$ than that of NiFe, CoFe and CoFeSiB single structures. The CoFeSiB SAF structures were proved to be beneficial far the switching characteristics such as reducing the coercivity and increasing the sensitivity in micrometer to submicrometer-sized elements.