• The Monthly Technology and Standards
• /
• s.115
• /
• pp.43-43
• /
• 2011

• Journal of the Korean Vacuum Society
• /
• v.8 no.4A
• /
• pp.445-449
• /
• 1999

We studied the properties of the InAs epitaxial layers grown of (100)-oriented GaAs ($2^{\circ}$tilted toward[011]) by molecular beam epitaxy. From DCX (double-crystal x0ray), the better crystal quality was shown in InAs epitaxial layers on about 2500$\AA$ GaAs epitaxial layers on GaAs, we obtained the high mobility of InAs epitaxy in As/In BEP ratio (1.2~2.0) from Hall effect measurement. The electron mobility increased as electron concentration increases, until Si cell temperature $960^{\circ}C$$(N_D=2.21\times10^{-17}\textrm{cm}^{-3})$. The mobility decreases as the Si cell temperature increases, at the temperature over $960^{\circ}C$. We obtained the high mobility (1.10$\times$104cm2/V.s) at Si electron concentration of $N_D=2.21\times10^{-17}\textrm{cm}^{-3}$.

• The Monthly Technology and Standards
• /
• s.114
• /
• pp.18-20
• /
• 2011

기술표준원에서는 지난 6월 16일부터 30일까지 '국가표준화 및 적합성평가 능력 배양' 과정을 미얀마, 베트남, 인도네시아 등 총 9개 개도국의 국가표준화기구와 적합성평가 관련 실무자 14명을 대상으로 진행했다. 참석자들은 특히 우리나라가 원조를 받던 수원국에서 공여국이 된 첫 번째 케이스라는 점에 많은 관심을 피력했다. 김가현 기술표준원 국제표준협력과 전문위원의 진행 후기를 싣는다.

• Proceedings of the Acoustical Society of Korea Conference
• /
• 1998.06c
• /
• pp.107-110
• /
• 1998

본 논문은 DTW(Dynamic Time Warping)을 이용한 음성인식에서 표준패턴(reference patterns)으로 사용되는 벡터열을 GA(Genetic Algorithm)을 이용하여 보다 적응된 패턴의 벡터열로 생성하는 방법을 제시한다. 본 논문의 필요성은 다음과 같다. 음성인식의 주요한 엔진들 중에 하나로 DTW가 사용된다[1]. DTW는 표준패턴과 시험패턴(test patterns)간의 최적 경로(optimal path)를 찾아내어 가장 유사한 패턴을 찾아내는 방법을 말한다. 그러나 음성은 같은 발음에 대해서도 사람의 발성 길이와 목의 상태 등에 따라 다양한 패턴으로 나타나며 동일 화자의 같은 어휘도 시간과 환경에 따라 변한다. 따라서 이러한 음성의 동적 특성에 적응하는 방법이 필요하다. 본 논문은 이러한 문제에 대한 해결 방법으로 GA를 이용하여 보다 적합하고 적응적인 표준 패턴을 생성시켜 적응하는 방법을 개발하였다.

• Korean Journal of Materials Research
• /
• v.28 no.11
• /
• pp.659-662
• /
• 2018

We report the properties of infrared photodetectors based on two kinds of quantum dots(QDs): i) 2.0 ML InAs QDs by the Stranski-Krastanov growth mode(SK QDs) and ii) sub-monolayer QDs by $4{\times}[0.3ML/1nm\;In_{0.15}Ga_{0.85}As]$ deposition(SML QDs). The QD infrared photodetector(QDIP) structure of $n^+-n^-(QDs)-n^+$ is epitaxially grown on GaAs (100) wafers using molecular-beam epitaxy. Both the bottom and top contact GaAs layers are Si doped at $2{\times}10^{18}/cm^3$. The QD layers are grown with Si doping of $2{\times}10^{17}/cm^3$ and capped by an $In_{0.15}Ga_{0.85}As$ layer at $495^{\circ}C$. The photoluminescence peak(1.24 eV) of the SML QDIP is blue-shifted with respect to that (1.04 eV) of SK QDIPs, suggesting that the electron ground state of SML QDIP is higher than that of the SK QDIP. As a result, the photoresponse regime(${\sim}9-14{\mu}m$) of the SML QDIP is longer than that (${\sim}6-12{\mu}m$) of the SK QDIP. The dark current of the SML QDIP is two orders of magnitude smaller value than that of the SK QDIP because of the inserted $Al_{0.08}Ga_{0.92}As$ layer.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.335-335
• /
• 2012

III-V 족 반도체 물질 중, GaN는 넓은 밴드갭을 가지고 있어 발광 다이오드나 레이저 다이오드, 트랜지스터, 스핀트로닉스 등의 응용에 유용한 물질이다 [1]. 실시간 성장 제어 및 최적화된 특정 소자 응용을 위해서는 GaN의 다양한 온도에 대한 유전율 함수 정보가 필수적이다. 편광분석법을 이용한 상온에서의 hexagonal GaN 유전율 함수는 이미 여러 연구에서 보고되었고, 80~650 K 사이의 온도 범위에 대한 언구도 수행되었다 [2,3]. 그러나, 온도변화에 대한 GaN 유전율 함수와 $E_0$ 전이점에 대한 해석은 부정확하다. 따라서 본 연구에서는 사파이어 기판 위에 분자살박막증착장치를 이용하여 c-축 방향 (0001)으로 성장 시킨 hexagonal GaN를 0.74~6.42 eV 에너지 구간에서 보다 확장된 온도 영역(26~693 K)의 유전율 함수를 편광분석법을 이용하여 측정하였다. 측정된 GaN의 유전율 함수를 회기분석법을 통한 2차 미분 표준해석법을 이용해 분석 하였고, 그 결과 $E_0$와 excitonic $E_0$ 전이점을 명확히 얻을 수 있었다. 온도가 감소함에 따라 격자상수 및 전자-포논 상호작용이 감소하여 전자 전이점이 청색천이 하고, 그 구조가 명확해 지는 결과를 얻었다. 본 연구의 결과는 GaN 유전율 함수의 온도 의존성에 대한 데이터베이스를 제공함은 물론, 실시간 모니터링과 GaN를 기반으로 하는 광소자 제작 등에 유용할 것이다.

• Journal of the Korean Society for Precision Engineering
• /
• v.20 no.11
• /
• pp.117-126
• /
• 2003

GA(genetic algorithm) has a powerful searching ability and is comparatively easy to use and to apply as well. By that reason, GA is in the spotlight these days as an optimization skill for mechanical systems.$^1$However, GA has a low efficiency caused by a huge amount of repetitive computation and an inefficiency that GA meanders near the optimum. It also can be shown a phenomenon such as genetic drifting which converges to a wrong solution.$^{8}$ These defects are the reasons why GA is not widdy applied to real world problems. However, the low efficiency problem and the meandering problem of GA can be overcomed by introducing parallel computation$^{7}$ and gray code$^4$, respectively. Standard GA(SGA)$^{9}$ works fine on small to medium scale problems. However, SGA done not work well for large-scale problems. Large-scale problems with more than 500-bit of sere's have never been tested and published in papers. In the result of using the SGA, the powerful searching ability of SGA doesn't have no effect on optimizing the problem that has 96 design valuables and 1536 bits of gene's length. So it converges to a solution which is not considered as a global optimum. Therefore, this study proposes ExpGA(experience GA) which is a new genetic algorithm made by applying a new probability parameter called by the experience value. Furthermore, this study finds the solution throughout the whole field searching, with applying ExpGA which is a optimization technique for the structure having genetic drifting by the standard GA and not making a optimization close to the best fitted value. In addition to them, this study also makes a research about the possibility of GA as a optimization technique of large-scale design variable problems.

• Korean Journal of Materials Research
• /
• v.29 no.9
• /
• pp.542-546
• /
• 2019

We investigate the characteristics of self-assembled quantum dot infrared photodetectors(QDIPs) based on doping level. Two kinds of QDIP samples are prepared using molecular beam epitaxy : $n^+-i(QD)-n^+$ QDIP with undoped quantum dot(QD) active region and $n^+-n^-(QD)-n^+$ QDIP containing Si direct doped QDs. InAs QDIPs were grown on semi-insulating GaAs (100) wafers by molecular-beam epitaxy. Both top and bottom contact GaAs layer are Si doped at $2{\times}10^{18}/cm^3$. The QD layers are grown by two-monolayer of InAs deposition and capped by InGaAs layer. For the $n^+-n^-(QD)-n^+$ structure, Si dopant is directly doped in InAs QD at $2{\times}10^{17}/cm^3$. Undoped and doped QDIPs show a photoresponse peak at about $8.3{\mu}m$, ranging from $6{\sim}10{\mu}m$ at 10 K. The intensity of the doped QDIP photoresponse is higher than that of the undoped QDIP on same temperature. Undoped QDIP yields a photoresponse of up to 50 K, whereas doped QDIP has a response of up to 30 K only. This result suggests that the doping level of QDs should be appropriately determined by compromising between photoresponsivity and operating temperature.

• Korean Journal of Optics and Photonics
• /
• v.12 no.5
• /
• pp.376-381
• /
• 2001

We have fabricated a spectroadiometric system to measure spectral radiance of optical sources and evaluated its characteristics such as spectral responsivity, nonlinearity, and so on. The measurement system with PMT, Si, InGaAs, and IR-enhanced InGaAs detectors has shown a good linearity and a wide spectral responsivity of 250∼2500 nm. This spectroradiometric system will be used as the primary national standard system of spectral radiance measurements.

• Proceedings of the Korean Institute of Intelligent Systems Conference
• /
• 2000.05a
• /
• pp.39-42
• /
• 2000

Both evolutionary programming (EP) and genetic algorithm (GA) are classified as evolutionary computation. They have been successful in finding a solution in a wide search space. In this paper, our objectives are to find the coefficients of characteristic equation, in terms of the stability indices using EP and GA, and to make a comparison of both methods.