• 한국결정성장학회지
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• 제29권6호
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• pp.379-382
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• 2019

금 나노 입자의 합성은 폴리바이닐피롤리던(PVP)의 계면 활성제로 아스코르브 산(AC)에 의한 골드 솔트의 환원을 통해 수용액 환경을 만들었다. pH 제어에 의해 4 내지 20 nm의 크기 범위를 갖는 고분 산성 금 입자를 고수율로 제조하였다. 합성된 금 나노 입자의 구조적 및 광학적 특성은 투과 전자 현미경(TEM) 및 UV-vis 분광법에 의해 특성화되었다. 제조된 나노 입자는 효율적인 표면 강화 라만 산란(SERS) 특성을 나타내었고, 이들의 SERS 활성은 크기에 의존한다.

• 대한화학회지
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• 제47권1호
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• pp.7-12
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• 2003

최근 연구 자료에 의하면 Tollen의 방법을 이용하여 만들어진 silver mirror substrate의 SERS 효과가 다른 substrate에 비해 상당히 뛰어난 효과가 있다는 것으로 보고되었다. 본 연구에서는 이러한 silver mirror substrate의 특성을 알아보기 위하여 환원제의 종류, 시간 및 열처리에 따른 silver mirror substrate의 변화를 조사하였다. 또한 이러한 변화가 phenol red의 SERS 증강에 미치는 영향 및 흡착 배향과 어떠한 상관관계가 있는 지에 대해서 연구하였다.

• 한국분말재료학회지
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• 제21권6호
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• pp.441-446
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• 2014

In this study, we synthesize silica-core gold-satellite nanoparticles (SGNPs) for the surface-enhanced Raman scattering (SERS) based sensing applications. They consist of gold satellite nanoparticles (AuNPs) fixed on the silica core nanoparticles, which sizes of AuNPs can be tunned by varying the amount of reactants (growth solution and reducing agent). Their surface plasmon resonance (SPR) properties were characterized by using UV-vis spectroscopy, showing that the growth of AuNPs on silica cores leads to the light absorption in the longer wavelength region. Furthermore, the size increase of AuNPs exhibited the dramatic change in SERS activity due to the formation of hot spots. The optimized SGNPs showing enhancement factor ${\sim}3.8{\times}10^6$ exhibited a detection limit of rhodamine 6G (R6G) as low as $10^{-8}M$. These findings suggest the importance of size control of SGNPs and their SPR properties to develop highly efficient SERS sensors.

• 센서학회지
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• 제30권4호
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• pp.267-272
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• 2021

In this study, Ag was deposited to investigate its applicability as a surface-enhanced Raman scattering substrate after forming a grass-type black silicon structure through maskless reactive ion etching. Grass-structured black silicon with heights of 2 - 7 ㎛ was formed at radio-frequency (RF) power of 150 - 170 W. The process pressure was 250 mTorr, the O₂/SF₆ gas ratio was 15/37.5, and the processing time was 10 - 20 min. When the processing time was increased by more than 20 min, the self-masking of Si_xO_yF_z did not occur, and the black silicon structure was therefore not formed. Raman response characteristics were measured based on the Ag thickness deposited on a black silicon substrate. As the Ag thickness increased, the characteristic peak intensity increased. When the Ag thickness deposited on the black silicon substrate increased from 40 to 80 nm, the Raman response intensity at a Raman wavelength of 1507 / cm increased from 8.2 × 10³ to 25 × 10³ cps. When the Ag thickness was 150 nm, the increase declined to 30 × 10³ cps and showed a saturation tendency. When the RF power increased from 150 to 170 W, the response intensity at a 1507/cm Raman wavelength slightly increased from 30 × 10³ to 33 × 10³ cps. However, when the RF power was 200 W, the Raman response intensity decreased significantly to 6.2 × 10³ cps.