• KSCE Journal of Civil and Environmental Engineering Research
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• v.40 no.1
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• pp.105-110
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• 2020

This study provides a method and data for predicting the flight initiation wind speed of wind-borne debris. From the force equilibrium acting on debris including aerodynamic and inertia forces, the equation for predicting the flight initiation wind speeds are presented. Wind tunnel tests were carried out to provide necessary aerodynamic data in the equation for the debris with various aspect ratios. The proposed equation for flight initiation wind speeds was validated from free flying tests in the wind tunnel. The flights of debris were mostly initiated by slip when width to thickness was less than 10, otherwise overturning were dominant. The actual flight initiation speeds were lower than that of the computed ones. The surface boundary layer flow and the gap between the debris and surface might affect the prediction error.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.111-115
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• 2000

$BaTIO_3$ thin films were prepared on (100) $BaTIO_3$ substrates by coating- pyrolysis process using metal-organic compounds of Ba and Ti. The amorphous films prefired at $450^{\circ}C$were crystallized above $700^{\circ}C$ under oxygen partial pressure of $2\times 10^{-4}$. The lattice parameters of the perpendicular axis for the $BaTIO_3$ thin films heat-treated below $800^{\circ}C$ were closer to a value of cubic $BaTIO_3$, whereas those above $800^{\circ}C$ were closer to a value of tetragonal BaTiG. The results of XRD P scan and pole-figure analyses indicated that BaTiO, thin films have an epitaxial relationship with the $SrTiO_3$ substrates. The $BaTIO_3$thin films annealed at$800^{\circ}C$ showed the surface with island-like grains about 0.4$mu \textrm{m}$ and the cross section of 0.8 $mu \textrm{m}$ thickness with granular grains.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.266-272
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• 2006

Application of power higher than the optimum operation value to an external electrode fluorescent lamps(EEFL) leads to the formation of small holes, called pinholes, which subsequently leads to lamp failure. The pinholes come from the insulating breakdown of the capacitor which is the dielectric layer between an external electrode and glass tube. The power of insulation breakdown is proportional to the electric power applied to the lamp. When a lamp current is low in the glass tube of dielectric constant K, the dielectric field strength of pinholes is about 3K kV/mm. The field strength of insulation breakdown decreases as the lamp current increases.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.21 no.11
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• pp.1496-1508
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• 1997

The effects of porous wind fence on the pressure characteristics around a 2-dimensional prism model of triangular cross-section were investigated experimentally. The fence and prism model were embedded in a neutral atmospheric surface boundary layer over the city suburb. In this study, various fences of different porosity, back fence, inclination angle of prism and location of additional back prisms were tested to investigate their effects on the pressure and wall shear stress of the prism surface. The fence and prism had the same height of 40 mm and Reynolds number based on the model height was Re=3.9*10$^{4}$. The porous fence with porosity 40% was found to be the best wind fence for decreasing the mean and pressure fluctuations on the prism surface. By installing the fence of porosity 40%, the wall shear stress on the windward surface of prism was largely decreased up to 1/3 of that without the fence. This indicates that the porous fence is most effective to abate the wind erosion. Pressure fluctuations on the model surface were decreased more than half when a back fence was located behind the prism in addition to the front fence. With locating several back prisms and decreasing the inclination angle of triangular prism, the pressure fluctuations on the model surface were increased on the contrary.

• Applied Chemistry for Engineering
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• v.24 no.3
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• pp.247-252
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• 2013

Sulfonated poly(ether ether ketone) (SPEEK) with a certain degree of sulfonation were synthesized by reacting PEEK and sulfuric acid at different reaction time. Then ion-selective composite carbon electrodes (ISCCE) were fabricated by coating the prepared SPEEK on the surface of carbon electrodes. The specific capacitance and resistance of the ISCCE were analyzed by electrical impedance spectroscopy. The ion exchange capacities (IEC) of the SPEEKs were measured in the range of 1.60~2.57 meq/g depending on the sulfonation time. The SPEEK more than 2.5 meq/g of IEC was considered unsuitable for fabricating the ISCCE because it was dissolved in water. The specific capacitance of the prepared ISCCE increased with increasing the IEC of coated SPEEKs and the capacitance was improved up to about 20% compared to that of uncoated carbon electrode. In addition, the electrical resistance of coating layer decreased significantly with increasing the IEC of coated SPEEKs. It is expected that the desalination efficiency of conventional capacitive deionization process can be improved by using the prepared ISCCE coated with SPEEK.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.347.2-347.2
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• 2014

최근, 비정질 산화물 반도체 thin film transistor (TFT)는 수소화된 비정질 실리콘 TFT와 비교하여 높은 이동도와 큰 on/off 전류비, 낮은 구동 전압을 가짐으로써 빠른 속도가 요구되는 차세대 투명 디스플레이의 TFT로 많은 연구가 진행되고 있다. 한편, 기존의 Thin-Film-Transistor 제작 시 우수한 박막을 얻기 위해서는 $500^{\circ}C$ 이상의 높은 열처리 온도가 필수적이며 이는 유리 기판과 플라스틱 기판에 적용하는 것이 적합하지 않고 높은 온도에서 수 시간 동안 열처리를 수행해야 하므로 공정 시간 및 비용이 증가하게 된다는 단점이 있다. 이러한 점을 극복하기 위해 본 연구에서는 간단하고, 낮은 제조비용과 대면적의 박막 증착이 가능한 용액공정을 통하여 박막 트랜지스터를 제작하였으며 thermal 열처리와 microwave 열처리 방식에 따른 전기적 특성을 비교 및 분석하고 각 열처리 방식의 열처리 온도 및 조건을 최적화하였다. P-type bulk silicon 위에 산화막이 100 nm 형성된 기판에 spin coater을 이용하여 Al-Zn-Sn-O 박막을 형성하였다. 그리고, baking 과정으로 $180^{\circ}C$의 온도에서 10분 동안의 열처리를 실시하였다. 연속해서 Photolithography 공정과 BOE (30:1) 습식 식각 과정을 이용해 활성화 영역을 형성하여 소자를 제작하였다. 제작 된 소자는 Junctionless TFT 구조이며, 프로브 탐침을 증착 된 채널층 표면에 직접 접촉시켜 소스와 드레인 역할을 대체하여 동작시킬 수 있어 전기적 특성을 간단하고 간략화 된 공정과정으로 분석할 수 있는 장점이 있다. 열처리 조건으로는 thermal 열처리의 경우, furnace를 이용하여 $500^{\circ}C$에서 30분 동안 N2 가스 분위기에서 열처리를 실시하였고, microwave 열처리는 microwave 장비를 이용하여 각각 400 W, 600 W, 800 W, 1000 W로 15분 동안 실시하였다. 그 결과, furnace를 이용하여 열처리한 소자와 비교하여 microwave를 통해 열처리한 소자에서 subthreshold swing (SS), threshold voltage (Vth), mobility 등이 비슷한 특성을 내는 것을 확인하였다. 따라서, microwave 열처리 공정은 향후 저온 공정을 요구하는 MOSFET 제작 시의 훌륭한 대안으로 사용 될 것으로 기대된다.

• Korean Journal of Environmental Agriculture
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• v.16 no.3
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• pp.207-211
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• 1997

Laboratory experiments were conducted to the potential ability of bioremediation with bentazon such as determining the absorption, translocation, and metabolism of $^{14}C-Bentazon$ in minari after foliar applications. The absorption and translocation of $^{14}C-bentazon$ were compared when applied to foliar of minari. In foliar applications, 21% was observed in treated leaves, 66% remained in water extracts of leaf surfaces, and 13% was found in the epicuticular wax layer after 2d. Translocation of the herbicide from treated leaves to roots was very low(79 to 9%). Analysis of methanol-soluble extracts of $^{14}C$ indicated that more than 60% of the foliarapplied herbicide was metabolized in all plant sections after 2d. However, 77% or more of the bentazon was degraded in roots and shoots 2d after root absorption. The major metabolite in these experiments was an unknown compound that was less polar than bentazon and 6- and 8-hydroxy bentazon.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.202-209
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• 1999

Microstrip line was fabricated on the oxidized porous silicon layer which has nearly electrically and chemically identical properties with thermally oxidized silicon layer. Thick oxidized porous silicon layer of few tenth of micrometers was prepared by thermal oxidation of porous silicon layer on silicon substrate. Multi-step thermal oxidation process was used to obtain high Quality and thick oxidized silicon layer and to release thermal stress. Microstrip line was fabricated on the oxidized porous silicon layer. Its microwave characteristics were measured and the availability for MMIC substrate was investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.182-185
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• 2002

자기정렬구조의 실리콘-게르마늄 이종접합 트랜지스터에서 $f_{max}$를 높이기 위한 방안으로 베이스의 저항 값을 감소시키고자 외부 베이스에 실리콘 및 실리콘-게르마늄 박막을 저온에서 선택적으로 성장할 수 있는 방법을 연구하였다. RPCVD를 이용하여 $SiH_{2}Cl_{2}$과 $GeH_{4}$를 소스 가스로 하고 HCI을 첨가하여 선택성을 향상시킴으로써 $675\sim725^{\circ}C$의 저온에서도 실리콘 및 실리콘-게르마늄의 선택적 에피성장이 가능하였다. 고온 공정에 주로 이용되는 $SiH_{2}Cl_{2}$를 이용한 실리콘 증착은 $675^{\circ}C$에서 열분해가 잘 이루어지지 않고 HCl의 첨가에 의한 식각반응이 동시에 진행되어 실리콘 기판에서도 증착이 진행되지 않으나 $700^{\circ}C$ 이상에서는 HCI을 첨가한 경우에 한해서 선택성이 유지되면서 실리콘의 성장이 이루어졌다, 반면 실리콘-게르마늄막은 실리콘에 비해 열분해 온도가 낮고 GeO를 형성하여 잠입시간을 지연하는 효과가 있는 게르마늄의 특성으로 인해 선택성이나 증착속도 모두에서 유리하였으나 실리사이드 공정시에 표면으로 게르마늄이 석출되는 현상 등의 저항성분이 크게 작용하여 실리콘-게르마늄막 만으로는 외부 베이스에의 적용은 적절하지 않았다. 그러나 실리콘막을 실리콘-게르마늄막 위에 Cap 층으로 증착하거나 실리콘막 만으로 외부 베이스에 선택적으로 증착하여 베이스의 저항을 70% 가량 감소시킬 수 있었다.

• Journal of the Korean Magnetics Society
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• v.2 no.1
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• pp.15-21
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• 1992

Acicular ${\gamma}-Fe_{2}O_{3}$ particles were heated at $90^{\circ}C$ in alkaline solution containing mixed solution of dyadic metal with $Co^{+2}/Fe^{+2}$ ratio of 0.5. When cobalt content was increased, the coercivity of resultant product increased linearly, and surface area decreased. The cobalt ferrite was grown epitaxially on the surface ${\gamma}-Fe_{2}O_{3}$ crystal, and the increase of coercivity was attributed to the crystalline magnetic anisotropy of the cobalt ferrite which is conform to coating layer. We can expect superior magnetic properties above normal ratio of 2. The progress of reaction has an effect on coercivity of cobalt ferrite epitaxial iron oxide. The stability of temperature and the change om standin& of $Co-{\gamma}-Fe_{2}O_{3}$ was largely influenced by the composition of coating layer.