• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.3
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• pp.166-173
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• 2001

Hysteresis loops of the ferroelectric thin films such as PLZT(10/30/70), PLT(10) and PZT(30/70) was simulated using the field-dependent polarization model and compared to the measured loops. In case of PZT(30/70) thin film, as the real saturation or polarization at the applied voltage or larger than 5V appears slack and its value is quite different from the simulated one, it is deduced that the ferroelectric polarization of PZT(30/70) is generated not only by the pure dipoles but also by various electric charges. The drain current of quasi-MFISFET is expressed by using the square-law FET and field-dependent polarization models. The modeling results are analogous to the experimental values. The channel of quasi-MFISFET using PZT(30/70) forms more quickly compared to that of quasi-MFISFET using PLZT(10/30/70) or PLT(10) in the state of 'write' gate voltage of -10V. This may be because the decrease rate of the polarization in the PZT(30/70) thin film is 3~4 times more rapid than that of the polarization in the PLZT(10/30/70) or the PLT(10) thin film in the retention characteristics.

• Journal of the Korean Geophysical Society
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• v.2 no.3
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• pp.225-233
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• 1999

Electrical resistivity of a rock-sample is dependant on not only formation factor of rock itself but also many parameters such as fluid type, measuring device, temperature, water saturation, electrical contact between electrode and core section, induced polarization, and frequency of electric source. In this study, we attempt to verify various affecting factors in core resistivity measurements and to find a better environment for core resistivity measurement. Particularly great attention has been paid to understanding the effects of temperature, water saturation, contact condition between sample and electrodes, and frequency of electric source. Precise measurement of resistivity can be achieved by utilizing silver paste for better contacts, taping samples for constant moisture contents, and using time-series resistivity data.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.12
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• pp.103-112
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• 2005

In this paper, in order to derive the current-voltage characteristics of n-AlGaN/GaN HEMTs with the piezoelectric and spontaneous polarizations, we suggested analytical solutions for the two-dimensional Poisson equation in the AlGaN and GaN regions by taking into account the longitudinal field variation, field-dependent mobility, and the continuity condition of the channel current flowing in the quantum well. Obtained expressions for long and short channel devices would be applicable to the entire operating regions in a unified manner. Simulation results show that the drain saturation current increases and the cutoff voltage decreases as drain voltage increases. Compared with the conventional models, the present model seems to provide more reasonable explanation for the drain-induced threshold voltage roll-off and the channel length modulation effect.

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.1041-1047
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• 1997

In this paper the dielectric properties of (0.8-x)Pb(Mb$_{1}$3//Nb/2/3)O$_3$/BaTiO$_3$-CaZrO$_3$(x=0.1, 0.15, 0.2, 0.25) ceramics were investigated. Specimens were prepared by the conventional mixed oxide method and sintering temperature and time were 1000~115$0^{\circ}C$ 2hr, respectively. The structural and dielectric properties with variation of sintering temperature and composition were investigated. All the specimens sintered at 115$0^{\circ}C$ for 2hr showed the highest value of 1043. With increasing the contents of CZ and frequency dielectric constant was decreased and which was decreased with increasing temperature from 3$0^{\circ}C$ to 15$0^{\circ}C$.

• Journal of Korean Tunnelling and Underground Space Association
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• v.17 no.3
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• pp.383-392
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• 2015

In subsea tunnelling, prediction of the fractured zone (or water bearing zone) ahead of tunnel face saturated by seawater with high water pressure has been a key factor for safe construction. This study verified the feasibility of utilizing induced polarization (IP) survey at tunnel face for predicting the ground condition ahead of the subsea tunnel face. A pore model was proposed to compute chargeability in granular material, and the relationship correlating chargeability with the variables affecting the chargeability was derived from the model. Parametric study has been performed on the variables to figure out the most influential factors affecting the chargeability. The results of the parametric study show that the size of narrow pores ($r_1$) and the salinity of pore water are the most influential factors on chargeability. Laboratory tests were conducted on various types of ground condition by changing the salinity of pore water, the thickness of the fracture zone and the existence of gouge (weathered granite) within the joints of the fractured zone to figure out the effect of the ground characteristics on the IP phenomenon. Test results show that the chargeability of the fractured zone saturated by seawater increases if the joints in the fractured zone are filled with gouge since the infilled gouge will decrease the size of narrow pores ($r_1$).

• Electronics and Telecommunications Trends
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• v.29 no.6
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• pp.1-13
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• 2014

GaN(Gallium Nitride)는 3.4eV의 넓은 에너지 갭으로 인하여 고전압에서 동작이 가능하고, 분극전하를 이용한 캐리어 농도가 높아 높은 전류밀도와 전력밀도를 얻을 수 있으며, 높은 전자 이동도와 포화 속도로부터 고속 동작이 가능하여 고주파 고출력 고효율 소형의 전력증폭기 소자의 재료로 적합하다. 본고에서는 민수 및 군수 겸용 Ku-대역 및 Ka-대역 GaN 고출력 전력증폭기(SSPA: Solid-State Power Amplifier)와 관련된 GaN 전력증폭 소자, GaN 전력증폭기 MMIC(Microwave Monolithic Integrated Circuit), 내부정합 패키지형 GaN 전력증폭기 및 GaN SSPA에 대하여, 국내외 특허 기술동향과 연구개발 기술동향을 중심으로 고찰하고자 한다. 국외의 GaN 고주파 고출력 전력증폭기 기술의 연구동향이나 특허동향을 심층분석하여 연구개발에 활용하고자 한다.

• Proceedings of the Membrane Society of Korea Conference
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• 1997.04b
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• pp.43-44
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• 1997

세척제는 금속 표면에 도포되어 있는 왁스, 그리스, 방청유 등의 윤활유 및 금속 가공 중에 사용한 절삭유, 연마유 등의 유지성 물질을 제거하는 탈지 효과와 표면에 묻어 있는 오물을 제거하는 목적으로 우수한 세정력을 지니고 있다. 세척제는 현장의 세척조의 상태가 가동 시간이 길어짐에 따라 유분이 과포화하게 되고 한정된 계면활성제량 때문에 미처 Micelle을 형성하지 못한 광유중 일부는 에멀젼 내 Oil Drop 형태로 존재하고 나머지는 에멀젼층 위에 부유하게 된다. 따라서 세척제의 세정력을 유지하기 위하여는 주기적으로 세척액중의 유분을 제거하여야 한다. 본 연구에서는 한외여과막을 이용하여 세척수 중 존재하는 Oil 성분을 제거함으로써 세척수의 수명을 극대화시키고자 한다. 또한 한외여과시 동반되는 농도 분극화 현상을 줄이고 투과특성을 향상시키기 위하여 압축질소로 주기적으로 역세척하며 최적운전 조건을 확인하는데 있다.

• Korean Journal of Materials Research
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• v.7 no.5
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• pp.381-385
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• 1997

PEMOCVD에 의해서 SrBi$_{2}$Ta$_{2}$O$_{9}$밥막이 낮은 온도에서 성공적으로 Pt/Ti/SiO$_{2}$Si위에 증착되었다. 5$50^{\circ}C$에서 증착된 200nm박막은 치밀하고 작은 결정립을 보였으며 3V의 인가전압하에서 이력곡선은 포화되기 시작하였다. 3V에서 박막은 잔류분극 (P$_{r}$)과 항전계(E$_{c}$)는 각각 15$\mu$/$\textrm{cm}^2$과 50kV/cm이었다. 6V bipolar square pulse의 피로측정에서 박막은 1.0x$10^{11}$cycles까지 피로 현상을 보이지 않았다. PEMOCVD에 의해서 5$50^{\circ}C$에서 증착된 SBT박막은 비휘발성 기억소자에 충분히 활용할 수 있다.다.

• Journal of Welding and Joining
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• v.17 no.2
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• pp.76-83
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• 1999

Fracture toughness({TEX}$J_{IC}${/TEX}) on 304 austenitic stainless steel weldments artificially degraded for long period under SCC environments were evaluated to investigate its reliability and environmental characteristics. Electro-chemical polarization tests were previously carried out to evaluate corrosion susceptiblility of weldment, and stress corrosion cracking was tested under various conditions of 3.5wt.% NaCl solution, the temperature of $25^{\circ}$C and $95^{\circ}$C, and oxygen concentration during 3000hours. From the results obtained, it was found that 304 stainless steel weldment was so susceptible under high temperature and high oxygen concentration of 3.5wt.% NaCl solution, and fracture toughness({TEX}$J_{IC}${/TEX}) was also considerably reduced by material degradation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.8
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• pp.1-12
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• 2001

The adaptive learning circuit is designed on the basis of modeling of MFSFET (Metal-Ferroelectric-Semiconductor FET) and the numerical results are analyzed. The output frequency of the adaptive learning circuit is inversely proportional to the source-drain resistance of MFSFET and the capacitance of the circuit. The saturated drain current with input pulse number is analogous to the ferroelectric polarization reversal. It indicates that the ferroelectric polarization plays an important role in the drain current control of MFSFET. The output frequency modulation of the adaptive learning circuit is investigated by analyzing the source-drain resistance of MFSFET as functions of input pulse numbers in the adaptive learning circuit and the dimensionality factor of the ferroelectric thin film. From the results, the frequency modulation characteristic of the adaptive learning circuit are confirmed. In other words, adaptive learning characteristics which means a gradual frequency change of output pulse with the progress of input pulse are confirmed. Consequently it is shown that our circuit can be used effectively in the neuron synapses of nueral networks.