• Title/Summary/Keyword: 펜델로승

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Effects of Interface Soaking on Strain Modulation in InAs/GaSb Strained-Layer Superlattices (계면 흡착에 의한 InAs/GaSb 초격자의 응력변조 효과)

  • Shin, H.W.;Choe, J.W.;Kim, J.O.;Lee, S.J.;Kim, C.S.;Noh, S.K.
    • Journal of the Korean Vacuum Society
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    • v.20 no.1
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    • pp.35-41
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    • 2011
  • In this study, the interface soaking effect in InAs/GaAs strained-layer superlattice (SLS) on crystalline phase modulation has been analyzed by the x-ray diffraction (XRD) curve. The strain variation induced by As and/or Sb soaking was determined by the separation angle between the substrate peak and the 0th-order superlattice satellite peak in the XRD spectra. Contrated that the As/InAs soaking arises minor GaAs-like interfacial layer, the Sb/GaSb soaking induces InSb-like one. The Fourier-transformed curves of the Pendellosung interference oscillation shows that the optimum soaking times of As/InAs and Sb/GaSb are 2 sec and 12 sec, at which the highest crystallineity has, respectively. An anomalous twin-peak phenomenon that a satellite peak splits into two peaks was observed in the SLS structure co-soaked by As and Sb at InAs${\rightarrow}$GaSb interfaces. We suggest that it may be resulted from coexistence of two kinds crystalline phases of InAsSb and GaAsSb due to intermixing of In${\leftrightarrow}$Ga and Sb${\leftrightarrow}$As.