• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.114-121
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• 1997

The transparent conductiong thin films of tin oxides were prepared on pyrex glass substrates by the pulse laser deposition. In the atmospheres of vacuum, O2, and $Sn(CH_3)_4$ a polycrystalline $SnO_2$ target was ablated by Nd-YAG laser beam to deposit thin films on the substrates at room temperature, and as-deposited films were subsequently heat-treated in the air for 2 h at 230, 420 and $610^{\circ}C$, respectively. The characteristics of the thin films were examined by UV-VIS-NIR spectrometry and X-ray diffractometry, and the electrical properties were measured by four-point probe method along with film thickness monitored by the stylus method. It was observed that in the presence of $Sn(CH_3)_4$, $SnO_2$ phases were grown even at room temperature. This suggests that the microplasma producted during the laser ablation plays an important role in the dissociaation of precursor molecules.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.152-152
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• 2006

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.05a
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• pp.24-25
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• 1994

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1317_1318
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• 2009

본 논문에서는 폴리머 기판에서의 레이저 조사 밀도와 기판의 온도변화에 따라 성장하는 ZnO박막의 구조적 특성을 알아보기 위해 펄스레이저 증착법으로 polyethersulfone（PES)기판상에 ZnO 박막을 형성하였다. 레이저 조사 밀도는 0.2~0.4 J/$cm^2$까지 기판온도는 $50^{\circ}C{\sim}200^{\circ}C$까지 변화시켰고, 박막의 결정 구조적 특성을 XRD, AFM, SEM을 통해서 관찰하였다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.5
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• pp.475-480
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• 2017

In this paper, the conductivity of the fine pattern is improved in the insulating substrate by laser-induced forward transfer (LIFT) process. The high laser beam energy generated in conventional laser induced deposition processes induces problems such as low deposition density and oxidation of micro-patterns. These problems were improved by using a polymer coating layer for improved deposition accuracy and conductivity. Chromium and copper were used to deposit micro-patterns on silicon wafers. A multi-pulse laser beam was irradiated on a metal thin film to form a seed layer on an insulating substrate(SiO2) and electroless plating was applied on the seed layer to form a micro-pattern and structure. Irradiating the laser beam with multiple scanning method revealed that the energy of the laser beam improved the deposition density and the surface quality of the deposition layer and that the electric conductivity can be used as the microelectrode pattern. Measuring the resistivity after depositing the microelectrode by using the laser direct drawing method and electroless plating indicated that the resistivity of the microelectrode pattern was $6.4{\Omega}$, the resistance after plating was $2.6{\Omega}$, and the surface texture of the microelectrode pattern was uniformly deposited. Because the surface texture was uniform and densely deposited, the electrical conductivity was improved about three fold.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.249-253
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• 2000

We have analyzed electrical characteristics of the amorphous $MgTiO_3$thin films deposited by pulsed laser deposition (PLD) technique with the temperature of 400~$500^{\circ}C$. The electrical characteristics of $MgTiO_3$films heavily depend on the deposition temperature. We speculate that the density of anomalous positive charge (APC) substantially increases as the deposition temperature lowers, causing the HF C-V curves shift to the direction of the negative gate voltage. We further observed that both the degree of C-V shift as a function of the deposition temperature and the density of APC were minimized by the use of $SiO_2$with thickness of approximately 100 $\AA$ between $MgTiO_3$films and the Si substrate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.1
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• pp.33-36
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• 2004

Amorphous GaN film was deposited using a laser ablation of the highly densified GaN target. Through the surface morphological and compositional analysis of films deposited under various laser energies and Ar gas pressures, the film deposited under the pressure of 10 Pa were found to be amorphous GaN with the smooth surface. In particular, the film at 200 mJ/pulse showed the enhanced crystallinity and stoichiometric composition, compared with those of the films at relatively lower laser energy. The strong band-gap emission at 2.8 eV was observed from amorphous GaN film in the room temperature photoluminescence spectra, showing the highest efficiency in the film at 200 mJ/pulse under 10 Pa.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.74-74
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• 2011

최근 새로운 형태의 디스플레이에 관한 관심이 집중되고 있다. 이들 중 특히 투명 산화물 반도체는 기존의 실리콘 기반의 반도체에 비해 가시광 영역에서 높은 투과도를 보이며, 또한 기존의 비정질 실리콘 소자에 비해서 10 cm2/Vs이상의 높은 전하 이동도 값을 가진다. 본 연구에서는 투명 산화물 반도체 소재 중 InGaZnO4를 사용하여 펄스 레이저 방법으로 Al2O3 (0001)기판 위에 비정질 상태인 a-InGaZnO4 박막을 성장 시켰다. 박막의 증착 온도를 변화(RT, $50^{\circ}C$, $150^{\circ}C$, $250^{\circ}C$, $450^{\circ}C$, $550^{\circ}C$)시켜 성장된 박막의 구조적, 화학적, 전기적 그리고 광학적 특성을 조사하였다. 증착 온도가 $450{\sim}550^{\circ}C$ 사이에서 박막의 상태가 비정질(amorphous)에서 polycrystalline으로 성장되는 것을 X-Ray Diffraction과 Field Emission-Scanning Electron Microscope를 이용하여 확인하였고 이는 InGaZnO4 박막의 결정화 온도가 $450^{\circ}C$ 이상임을 알 수 있었다. X-ray Photoelectron Spectroscopy를 통해서 target 물질과 성장된 박막의 조성 및 화학적 상태를 고찰한 결과, 박막의 결정성 변화가 화학적 상태 변화와는 무관하다는 사실을 알 수 있었다. 온도 의존 비저항 측정을 통해 박막이 반도체 성향을 가지는 것을 확인 하였다. 또한 Hall 측정 결과 증착 온도가 올라 갈수록 전하 밀도는 증가 하지만, 전하 이동도는 다결정 박막($550^{\circ}C$)에서 급격히 감소하고, 이로 인해 비저항 값이 크게 증가함을 알 수 있었다. 이는 다결정 박막 내 존재하는 grain boundary들이 이동도 값에 영향을 준다는 것으로 추측할 수 있다. Ultra violet-Visible-Near Infrared 측정을 통해 가시광 영역에서 80%이상의 투과율을 나타내며 증착 온도가 증가함에 따라 에너지 밴드갭(Eg)이 커지는 것을 확인 할 수 있는데 이는 Hall 측정 결과에서 확인한 전하 밀도의 증가로 인해 에너지 밴드갭이 커지는 Burstein-Moss 효과로 설명할 수 있다.

• Proceedings of the Korean Ceranic Society Conference
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• 2004.10a
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• pp.79.2-79.2
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• 2004

• Proceedings of the Korean Magnestics Society Conference
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• 2004.12a
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• pp.156-157
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• 2004