• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.16-20
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• 2004

We present the fabrication and performance of wavelength tunable butt coupled (BT) sampled-grating (SG) distributed bragg reflector (DBR) - planar buried heterostructure (PBH) laser diodes (LD). The fabricated LD showed the high optical output power due to the high coupling efficiency between active and passive components by the BT coupling methods. The series resistance and diode ideality factor of LD were measured to be 3.7 $\Omega$ and 1.35, respectively. The average threshold current was 25 ㎃. The output powers of BT-SG DBR-PBH-LD were obtained to be as high as 12.3 and 24.56 ㎽ at 100 and 200 ㎃, respectively. The maximum wavelength tuning range was about 31 nm and the side mode suppression ratio was about 37 dB.

• Korean Journal of Optics and Photonics
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• v.7 no.4
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• pp.390-396
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• 1996

A pulsed Ti : sapphire laser with a Z-folded cavity, which was pumped by a frequency-doubled Nd : YAG laser, was developed. A laser output energy of 822 $\mu$J with a pulsewidth of 5 ns and an output efficiency of 27.4% was obtained at a center wavelength of 790 nm using an output coupler of 18% reflectance. The slope efficiency was 35%. The output beam diameter was 0.9 mm, and the divergence angle was 1.8 mrad. The spectrum tunability was about 120 nm from 740 nm to 860 nm with a FWHM of 90 nm at an 18% output coupler and a pumping energy of 3 mJ.

• Korean Journal of Optics and Photonics
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• v.5 no.1
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• pp.100-105
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• 1994

We have reduced the oscillating linewidth of the commercial single mode InGaAsP visible laser diodes which emits in the 657 nm region of the spectrum down to 10 MHz by making a extended cavity employing the Littrow-type grating. The wavelength tuning characteristics of the commercial visible laser diode (CQL820D, Philips Co.) for the grating angle, laser temperature, and injection currents were measured by using the wavemeter. The proportional coefficients of the laser were found to be 1 THzlmrad, 32.4 GHz/K, and 6.14 GHz/mA, respectively.tively.

• Korean Journal of Optics and Photonics
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• v.12 no.2
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• pp.91-97
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• 2001

We present a fiber Bragg grating (FBG) sensor system for measuring static and high-speed dynamic strains with a resolution of about $5\mu$strain. This sensor system demodulates signals from the FBG sensor utilizing a compensated tunable narrow bandpass filter. We have placed a set of twelve FBGs to concrete specimen and measured its internal stress under various applied load conditions.itions.

• Korean Journal of Optics and Photonics
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• v.25 no.2
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• pp.90-94
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• 2014

We propose a Yb:YAG laser Q-switched by a semiconductor saturable absorber and a laser output coupler composed of a polarizer and a quarter-wave plate, and we investigate the output characteristics of the proposed Q-switched laser. We show that the laser power can be varied by rotation of the quarter-wave plate.

• Journal of the Institute of Convergence Signal Processing
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• v.21 no.4
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• pp.162-169
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• 2020

In this paper, we attempted a qualitative understanding of mutual injection locking without rigorous mathematics, and analyzed the proposed mutual injection locked light source. Also, a low-cost WDM-PON light source based on mutual injection locking using two unpolarized Fabry-Perot Laser Diodes (F-P LDs), was implemented. The RIN (Relative Intensity Noise) characteristic for the wavelength change of the F-P LD was measured, and when the variable wavelength range was 2.07 nm, it showed a RIN of at least -110 dB/Hz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.419-423
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• 2003

In this paper, we have constructed singly resonant KTP OPO system pumped by 532 nm to obtain broadly frequency tunable pulses. Also we have mathematically simulated frequency tuning range, phase matching angle for 900 nm output and threshold energy, and we calculated output intensity using wave propagation equations for optical parametric oscillator which include walk-off, pump depletion.

• Proceedings of the Korean Information Science Society Conference
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• 2003.04d
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• pp.608-610
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• 2003

Ethernet PON(Passive Optical Network)에서 핵심 기술 중의 하나인 MAC(Media Access Control) 프로토콜은 ONU(Optical Network틴nit)들이 상향으로 트래픽을 전송할 때 공유되어 있는 링크상의 충돌을 방지하고, 효율적인 대역폭을 할당하기 위한 스케줄링 알고리즘을 포함하고 있다. 본 논문에서는 차세대 가입자 망인 Ethernet PON에서 상향으로의 대역폭 부족을 개선하기 위하여, n개의 파장을 사용한 가변 슬롯 할당 TDMA(Time Division Multiple Access) 방식의 MAC 프로토콜을 제안한다. 이를 검증하기 위하여 OPNET 시뮬레이션 도구를 이용해 Ethernet PON 모델을 설계하고 시뮬레이션 한다.

• Korean Journal of Optics and Photonics
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• v.29 no.6
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• pp.241-246
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• 2018

In this paper, a low-cost optical temperature sensor is implemented, using a fiber Bragg grating (FBG) as the temperature probe and a low-cost VCSEL with temperature-dependent output wavelength as the light source. To analyze the wavelength of the reflected light from the FBG, an interrogation was applied using a method of referring to the internal temperature according to the output wavelength of the VCSEL. When the temperature of the VCSEL was adjusted from 14 to $52.2^{\circ}C$, the output wavelength varied from 1519.90 to 1524.25 nm. The degree of wavelength tuning according to temperature was $0.114nm/^{\circ}C$. The variable wavelength repeatability error according to temperature was ${\pm}0.003nm$, and the temperature measurement error was ${\pm}0.18^{\circ}C$. As a result of measuring the temperatures from 22.3 to $194.2^{\circ}C$, the value of the internal temperature change of the light source according to the applied temperature ${\Delta}T$ was $0.146^{\circ}C/{\Delta}T$, the change in reflected wavelength of the temperature probe according to applied temperature ${\Delta}T$ was measured at $16.64pm/^{\circ}C$. and the temperature measurement error of the sensor was ${\pm}1^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.402-402
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• 2011

본 연구에서는 결정질 태양전지 제작에 있어 재료비 절감과 기존의 Screen Printing 공정 기술에서의 단점을 보완하기 위한 방안으로 후면 passivation 구조와 레이저를 이용한 국부적 후면 전극 형성(Laser Fired Contact) 방법에 대한 실험을 진행하였다. 후면 passivation 층으로 SiO2/ SiNx/SiO2 삼중막 구조와 SiNx 단일막 구조를 형성시킨 후 anneal 온도에 따른 소수캐리어의 lifetime 변화를 비교하였다. LFC 형성은 2 ${\mu}m$ 두께의 Al이 증착된 기판 후면에 1,064 nm 파장의 레이저를 통해 diameter와 dot pitch 등의 파라미터를 가변 하여 실시하였다. 실험 결과 800$^{\circ}C$의 고온 열처리 후 ONO 삼중막에서의 lifetime 향상이 우세하여 SiNx 단일 막 보다 열적 안정성이 우수함을 확인하였다. LFC 결과 diameter가 40, 50, 60 ${\mu}m$로 가변된 조건에서는 40 ${\mu}m$ 일 경우와 dot pitch가 200, 500, 1,000 ${\mu}m$로 가변된 조건에서는 1,000 ${\mu}m$일 경우 610 mV의 Voc 값을 보였다. 이는 레이저를 통해 국부적으로 Al-Si 간 alloy를 형성시킴으로써 접촉 면적이 최소화됨에 따라 후면에서의 캐리어의 재결합속도를 감소시키고, passivation 효과를 극대화시키기 때문이다.