• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.4
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• pp.16-24
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• 2002

This work describes a 10b 120 MSample/s CMOS pipelined A/D converter(ADC) based on a merged-capacitor switching(MCS) technique for high signal processing speed and high resolution. The proposed ADC adopts a typical multi-step pipelined architecture to optimize sampling rate, resolution, and chip area, and employs a MCS technique which improves sampling rate and resolution reducing the number of unit capacitor used in the multiplying digital-to-analog converter (MDAC). The proposed ADC is designed and implemented in a 0.25 um double-poly five-metal n-well CMOS technology. The measured differential and integral nonlinearities are within ${\pm}$0.40 LSB and ${\pm}$0.48 LSB, respectively. The prototype silicon exhibits the signal-to-noise-and-distortion ratio(SNDR) of 58 dB and 53 dB at 100 MSample/s and 120 MSample/s, respectively. The ADC maintains SNDR over 54 dB and the spurious-free dynamic range(SFDR) over 68 dB for input frequencies up to the Nyquist frequency at 100 MSample/s. The active chip area is 3.6 $mm^2$(＝ 1.8 mm ${\times}$ 2.0 mm) and the chip consumes 208 mW at 120 MSample/s.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.5
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• pp.1-11
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• 2008

This work proposes a 15b 50MS/s CMOS pipeline ADC based on digital code-error calibration. The proposed ADC adopts a four-stage pipeline architecture to minimize power consumption and die area and employs a digital calibration technique in the front-end stage MDAC without any modification of critical analog circuits. The front-end MDAC code errors due to device mismatch are measured by un-calibrated back-end three stages and stored in memory. During normal conversion, the stored code errors are recalled for code-error calibration in the digital domain. The signal insensitive 3-D fully symmetric layout technique in three MDACs is employed to achieve a high matching accuracy and to measure the mismatch error of the front-end stage more exactly. The prototype ADC in a 0.18um CMOS process demonstrates a measured DNL and INL within 0.78LSB and 3.28LSB. The ADC, with an active die area of $4.2mm^2$, shows a maximum SNDR and SFDR of 67.2dB and 79.5dB, respectively, and a power consumption of 225mW at 2.5V and 50MS/s.

• Journal of Sensor Science and Technology
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• v.6 no.2
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• pp.137-144
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• 1997

In this paper, the design of a 10-bit 40-MS/s pipelined A/D converter is implemented to achieve low static power dissipation of 70 mW at the ${\pm}2.5\;V$ or +5 V power supply environment for high speed applications. A 1.5 b/stage pipeline architecture in the proposed ADC is used to allow large correction range for comparator offset and perform the fast interstage signal processing. According to necessity of high-performance op amps for design of the ADC, the new op amp with gain boosting based on a typical folded-cascode architecture is designed by using SAPICE that is an automatic design tool of op amps based on circuit simulation. A dynamic comparator with a capacitive reference voltage divider that consumes nearly no static power for this low power ADC was adopted. The ADC implemented using a $1.0{\mu}m$ n-well CMOS technology exhibits a DNL of ${\pm}0.6$ LSB, INL of +1/-0.75 LSB and SNDR of 56.3 dB for 9.97 MHz input while sampling at 40 MHz.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.465-466
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• 2008

This paper shows analysis of digital correction of pipelined ADC. Sub-ADCs have some margin because of digital correction so, it can be reduced bias current for minimizing power dissipation.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.220-228
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• 1995

An optimized 4-stage 12-bit pipelined CMOS analog-to-digital converter (ADC) architecture is proposed to obtain high linearity and high yield. The ADC based on a multiplying digital-to-analog converter (MDAC) selectively employs a binary-weighted-capacitor (BWC) array in the front-end stage and a unit-capacitor (UC) array in the back-end stages to improve integral nonlinearity (INL) and differential nonlinearity (DNL) simultaneously whil maintaining high yield. A digital-domain nonlinear error calibration technique is applied in the first stage of the ADC to improve its accuracy to 12-bit level. The largest DNL error in the mid-point code of the ADC is reduced by avoiding a code-error symmetry observed in a conventional digitally calibrated ADC is reduced by avoiding a code-error symmetry observed in a conventional digitally calibrated ADC is simulated to prove the effectiveness of the proposed ADC architecture.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.1
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• pp.53-60
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• 2004

This work describes a l0b 150 MSample/s CMOS pipelined A/D converter (ADC) based on advanced bootsuapping techniques for higher input bandwidth than a sampling rate. The proposed ADC adopts a typical multi-step pipelined architecture, employs the merged-capacitor switching technique which improves sampling rate and resolution reducing by $50\%$ the number of unit capacitors used in the multiplying digital-to-analog converter. On-chip current and voltage references for high-speed driving capability of R & C loads and on-chip decimator circuits for high-speed testability are implemented with on-chip decoupling capacitors. The proposed AU is fabricated in a 0.18 um 1P6M CMOS technology. The measured differential and integral nonlinearities are within $-0.56{\~}+0.69$ LSB and $-1.50{\~}+0.68$ LSB, respectively. The prototype ADC shows the signal-to-noise-and-distortion ratio (SNDR) of 52 dB at 150 MSample/s. The active chip area is 2.2 mm2 (= 1.4 mm ${\times}$ 1.6 mm) and the chip consumes 123 mW at 150 MSample/s.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.5
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• pp.57-66
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• 1999

This paper describes a 12b, 50 Msample/s CMOS AID converter using an acquisition-time minimization technique for the high-speed sampling rate of 50 MHz level. The proposed ADC is implemented in a $0.35\mu\textrm{m}$ double-poly five-metal n-well CMOS technology and adopts a typical multi-step pipelined architecture to optimize sampling rate, resolution, and chip area. The speed limitation of conventional pipelined ADCs comes from the finite bandwidth and resulting speed of residue amplifiers. The proposed acquisition-time minimization technique reduces the acquisition time of residue amplifiers and makes the waveform of amplifier outputs smooth by controlling the operating current of residue amplifiers. The simulated power consumption of the proposed ADC is 197 mW at 3 V with a 50 MHz sampling rate. The chip size including pads is $3.2mm\times3.6mm$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.3
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• pp.460-465
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• 2007

In this paper, the pipelined A/D converter with multi S/H stage structure is proposed for high resolution and high-speed data conversion rate. In order to improve a resolution and operational speed, the proposed structure increased the sampling time that is sampled input signal. In order to verify the operation characteristics 20MS/s pipelined A/D converter is designed with two S/H stage. The simulation result shows that INL and DNL are $0.52LSB{\sim}-0.63LSB$ and $0.53LSB{\sim}-0.56LSB$, respectively. Also, the designed Analog-to-Digital converter has the SNR of 43dB and power consumption is 18.5mW.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.8
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• pp.56-63
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• 2010

This work proposes a 12b 100MS/s 0.13um CMOS pipeline ADC for battery-powered mobile video applications such as DVB-Handheld (DVB-H), DVB-Terrestrial (DVB-T), Satellite DMB (SDMB), and Terrestrial DMB (TDMB) requiring high resolution, low power, and small size at high speed. The proposed ADC employs a three-step pipeline architecture to optimize power consumption and chip area at the target resolution and sampling rate. A single shared and switched op-amp for two MDACs removes a memory effect and a switching time delay, resulting in a fast signal settling. A two-step reference selection scheme for the last-stage 6b FLASH ADC reduces power consumption and chip area by 50%. The prototype ADC in a 0.13um 1P7M CMOS technology demonstrates a measured DNL and INL within 0.40LSB and 1.79LSB, respectively. The ADC shows a maximum SNDR of 60.0dB and a maximum SFDR of 72.4dB at 100MS/s, respectively. The ADC with an active die area of 0.92 $mm^2$ consumes 24mW at 1.0V and 100MS/s. The FOM, power/($f_s{\times}2^{ENOB}$), of 0.29pJ/conv. is the lowest of ever reported 12b 100MS/s ADCs.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.5 s.347
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• pp.54-63
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• 2006

This work proposes a 14b 100MS/s 0.18um CMOS ADC with optimized resolution, conversion speed, die area, and power dissipation to obtain the performance required in the fourth-generation mobile communication systems. The 3-stage pipeline ADC, whose optimized architecture is analyzed and verified with behavioral model simulations, employs a wide-band low-noise SHA to achieve a 14b level ENOB at the Nyquist input frequency, 3-D fully symmetric layout techniques to minimize capacitor mismatch in two MDACs, and a back-end 6b flash ADC based on open-loop offset sampling and interpolation to obtain 6b accuracy and small chip area at 100MS/s. The prototype ADC implemented in a 0.18um CMOS process shows the measured DNL and INL of maximum 1.03LSB and 5.47LSB, respectively. The ADC demonstrates a maximum SNDR and SFDR of 59dB and 72dB, respectively, and a power consumption of 145mW at 100MS/s and 1.8V. The occupied active die area is $3.4mm^2$.