• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1615-1617
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• 1997

절연재료로서 널리 쓰이는 XLPE(Crosslinked Polyethylene)의 경우, 내부에 발생하는 수트리에 의해 절연체로서의 성능 및 내구성이 많은 영향을 받게 된다. 이에 대한 연구가 진행되어 왔지만 수트리 발생과 진행에 관한 메커니즘은 아직까지 정확하게 알려지지 않은 상태이다. 이 논문에서는 몇 가지의 수트리 억제 컴파운드를 선정하여 시간과 온도에 따른 수트리 발생을 관찰하고, 컴파운드 내의 공간전하 및 전도전류가 수트리 억제에 미치는 영향을 조사하였다. 수트리가속을 위하여 주파수가속열화 방법을 사용하고 온도와 시간에 따른 발생 및 진전을 관찰하였다. 실험에서는 압축성형된 평판형 시편을 사용하였으며 상부전극으로는 $AgNO_3$ 수용액을, 하부전극으로는 금속전극을 사용하였다. 그리고 컴파운드 내부의 공간전하 분포 및 전도전류 측정을 하기위해 PEA(Pulsed Electro Acoustic) 방법을 이용하였다.

• Korean Journal of Materials Research
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• v.34 no.7
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• pp.370-376
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• 2024

In this study, we report significant improvements in lithium-ion battery anodes cost and performance, by fabricating nano porous silicon (Si) particles from Si wafer sludge using the metal-assisted chemical etching (MACE) process. To solve the problem of volume expansion of Si during alloying/de-alloying with lithium ions, a layer was formed through nitric acid treatment, and Ag particles were removed at the same time. This layer acts as a core-shell structure that suppresses Si volume expansion. Additionally, the specific surface area of Si increased by controlling the etching time, which corresponds to the volume expansion of Si, showing a synergistic effect with the core-shell. This development not only contributes to the development of high-capacity anode materials, but also highlights the possibility of reducing manufacturing costs by utilizing waste Si wafer sludge. In addition, this method enhances the capacity retention rate of lithium-ion batteries by up to 38 %, marking a significant step forward in performance improvements.

• Journal of IKEEE
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• v.23 no.1
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• pp.326-329
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• 2019

Gallium nitride(GaN) has been a superior candidate for the next generation power electronics. As GaN-on-Si substrate technology is mature, there has been new demand for monolithic integration of GaN technology with Si CMOS devices. In this work, (110)Si CMOS process was developed and the fabricated devices were evaluated in order to confirm the feasibility of utilizing domestic foundry facility for monolithic integration of Si CMOS and GaN power devices.

• Electronics and Telecommunications Trends
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• v.26 no.2
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• pp.100-110
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• 2011

반도체는 전자시스템의 제어 운용, 정보저장의 기능을 수행하는 핵심부품으로서 휴대폰, 자동차 등 주력산업의 경쟁력을 좌우할 정도로 파급효과가 크다. 중국은 전세계 전자장비 생산이 중국으로 이전되고 있고 중국 내수시장의 급속한 성장에 따라 반도체 산업이 고도성장을 기록하고 있다. 이미 세계 반도체 시장에서 최대의 소비국으로 자리잡고 있고, 파운드리 분야와 팹리스 분야에서 강점을 보이고 있다. 본 고에서는 중국의 반도체 산업을 중국 정부의 반도체 정책, 산업동향 및 특성, 반도체기업 현황을 중심으로 분석하고 우리에게 주는 시사점을 도출하고자 한다.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.164-165
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• 2007

파워 IC 공정은 CMOS 공정과 달리 내압별로 다양한 소자가 제공되며 BJT와 DMOS 구조를 포함할 경우 매스크가 20장이 넘는 매우 복잡한 공정이다. 본 논문에서는 국내의 파운드리 기업인 동부하이텍과 매그나칩사에서 제공하는 파워 IC 공정 및 제공되는 소자의 특성을 비교 분석하였다.

• Journal of Korea Technology Innovation Society
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• v.11 no.4
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• pp.565-591
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• 2008

Using theories of sectoral innovation system and supply chain management, this paper examines the status quo of Korean IT SoC industry's innovation system by comparing it with Taiwanese one. Taiwan IT SoC industry has accomplished a rapid growth on the basis of government policies that foster domestic firms after the establishment of Hsinchu Science Park. Cooperative networks between foundries firms and fablesses have been formed within the supply chain in this process. Therefore, Taiwan industry has possessed the possibility of the coevolution in sectoral innovation system. However, Korean IT SoC industry has failed to form cooperative networks, because of weak networks between related firms. In other words, there exists an interaction failure, which is a kind of the system failure, and it means a lack of linkage between actors as a result of insufficient use of complementarities and interactive learning. Therefore, Korean industry has little possibility of the coevolution in sectoral innovation system. The cooperative networks between actors are prerequisite towards evolution of innovation system of Korean IT SoC industry. Above all, the cooperative networks between fablesses and system companies need to be strengthened within the supply chain.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.12
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• pp.31-38
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• 2003

In this paper, we proposed a new structural AGC(Automatic Gain Control) circuit with extremely short settling time using high speed operation characteristics of a clipper. We investigated its operation characteristics in analysis. We also designed a burst-mode preamplifier for 1.25Gbps EPON systems using commercial foundry and investigated its characteristics by comparing the results of the designed and those of the analyzed. The characteristics of the designed circuit are in good agreement with those of the analyzed. As a result, it is shown that it is possible to realize extremely short settling time of under 1㎱.

• Electronics and Telecommunications Trends
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• v.38 no.1
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• pp.9-16
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• 2023

In the rapidly growing field of quantum computing, it is evident that a robust supply chain is needed for commercialization or large-scale production of quantum chips. As a result, the success of many R&D projects worldwide relies on the development of quantum chip foundries. In this paper, a variety of quantum chip foundries, particularly the ones creating photonic integrated circuit (PIC) quantum chips, are reviewed and summarized to demonstrate current technological trends. Global projects aiming to establish new foundries, as well as information regarding their respective funding, are also included to identify the evolutionary direction of quantum computing infrastructure. Furthermore, the potential application of lithium niobate as a novel material platform for quantum chips is also discussed.

• Electronics and Telecommunications Trends
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• v.39 no.3
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• pp.98-106
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• 2024

Advanced packaging is emerging as a core technology owing to the increasing demand for multifunctional and highly integrated semiconductors to achieve low power and high performance following digital transformation. It may allow to overcome current limitations of semiconductor process miniaturization and enables single packaging of individual devices. The introduction of advanced packaging facilitates the integration of various chips into one device, and it is emerging as a competitive edge in the industry with high added value, possibly replacing traditional packaging that focuses on electrical connections and the protection of semiconductor devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.12
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• pp.24-30
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• 2003

In this paper, we proposed an adaptive ATC(Automatic Threshold Control) circuit with more decreased settling time by improving the structure of the peak detector. We showed that it could reduce a good deal of the settling time because it showed less than half the error voltage ratio that the ATC circuit with conventional structure showed in analysis. We also designed a burst-mode ATC circuit for the 1.25Gbps EPON system using a commercial foundry. It produced the reference levels in very short time, 6㎱ in 40 ㏈ input dynamic range.