• Resources Recycling
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• v.23 no.1
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• pp.25-32
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• 2014

The purpose of this research is to develop a process and a system to collect, purify and reuse the residual quantity of trimethylgallium, used as a raw material, upon GaN epitaxial growth for LED from a metal organic chemical vapor deposition(MOCVD) equipment. This research reviews whether TMGa collected from the process can be used through a chemical and structural characteristics evaluation. As a result of analyzing the purity using ICP-MS and ICP-AES, 7N high purity (99.99999%) of TMGa was obtained. According to checking the structural change of TMGa through NMR analysis, TMGa having pure $(CH_3)_3Ga$ structure was obtained without structural change. For reliability review of the collected TMGa, u-GaN was deposited using the MOCVD process and an structural, optical and electrical characteristics evaluation was conducted. As a result, it was found out that the reuse was possible.