• Title/Summary/Keyword: 텅스텐 플러그

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An Optimization of Tungsten Plug Chemical Mechanical Polishing(CMP) using the Different Sets of Slurry and Pad (슬러리와 패드변화에 따른 텅스텐 플러그 CMP 공정의 최적화)

  • 김상용;서용진;이우선;이강현;장의구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.7
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    • pp.568-574
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    • 2000

  • We have been optimized tungsten(W) plug CMP(chemical mechanical polishing) characteristics using two different kinds of component of slurry and two different kinds of pad which have different hardness. The comparison of oxide film roughness on around W plug after polishing has been carried out. And W plug recess for consumable sets and dishing effect at dense area according to the rate of over-polishing has been investigated. Also the analysis of residue on surface after cleaning have been performed. As a experimental result we have concluded that the consumable set of slurry A and hard pad was good for W plug CMP process. After decreasing the rate of chemical reaction of silica slurry and adding two step buffering we could reduce the expanding of W plug void however we are still recognizing to need a more development for those kinds of CMP consumables.

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