• Journal of Korean Tunnelling and Underground Space Association
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• v.5 no.1
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• pp.71-88
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• 2003

The DRASTIC system is widely used for assessing regional groundwater pollution susceptibility by using hydrogeological factors such as depth to water, net recharge, aquifer media, soil media, topography, vadose zone media, hydraulic conductivity. This study is providing Modified Drastic Model to which lineament density, land use, influence of groundwater drawdown caused by tunnel excavation are added as additional factors using geographic information system, and then to evaluate groundwater contamination potential of ${\bigcirc}{\bigcirc}$ area. For statistical analysis, vector coverage per each factor is converted to grid layer and after each correlation coefficient between factors, covariance, variance, eigenvalue and eigenvector by principal component analysis of 3 direction, are calculated, correlation between factors is analyzed. Also after correlation coefficients between general DRASTIC layer and rated lineament density layer, between general DRASTIC layer and rated land use layer, between general DRASTIC layer and rated tunnel excavation influence layer are calculated, final modified DRASTIC model is constructed by using them with each weighting. When modified DRASTIC model was compared with general DRASTIC model, contamination potential in modified DRASTIC model is fairly detailed and consequently, vulnerable area which has high contamination potential could be presented concretly.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.301-301
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• 2011

최근 고밀도 메모리 반도체의 재료와 빠른 응답을 요구하는 나노입자를 이용한 비휘발성 메모리 소자의 제작에 대한 연구가 활발히 진행되고 있다. 그에 따른 기존의 플래쉬 메모리가 가지는 문제점을 개선하기 위해서 균일하고 규칙적으로 분포하는 새로운 나노소재의 개발과 비휘발성, 고속 동작, 고집적도, 저전력 소자의 공정기술이 요구되고 있다. 또한 부유게이트에 축적되는 저장되는 전하량을 증가시키기 위한 새로운 소자구조 개발이 필요하다. 한편, 실리 사이드 계열의 나노입자는 금속 나노입자와 달리 현 실리콘 기반의 반도체 공정에서 장점을 가지고 있다. 따라서 본 연구에서는 화합물 중에서 비휘발성 메모리 장치의 전기적 특성을 향상 시킬 수 있는 실리사이드 계열의 바나듐 실리사이드(V3Si) 박막을 열처리 과정을 통하여 수 nm 크기의 나노입자로 제작하였다. 소자의 제작은 p-Si기판에 실리콘산화막 터널층(5 nm 두께)을 건식 산화법으로 성장 후, 바나듐 실리사이드 금속박막을 RF 마그네트론 스퍼터 시스템을 이용하여 4~6 nm 두께로 터널 베리어 위에 증착하고, 그 위에 초고진공 마그네트론 스퍼터링을 이용하여 SiO2 컨트롤 산화막층 (20 nm)을 형성시켰다. 여기서 V3Si 나노입자 형성을 위해 급속 열처리법으로 질소 분위기에서 800$^{\circ}C$로 5초 동안 열처리하여 하였으며, 마지막으로 열 기화 시스템을 통하여 알루미늄 전극(직경 200 ${\mu}m$, 두께 200 nm)을 증착하여 소자를 제작하였다. 제작된 구조는 금속 산화막 반도체구조를 가지는 나노 부유게이트 커패시터이며, 제작된 시편은 투사전자현미경을 이용하여 나노입자의 크기와 균일성을 확인했다. 소자의 전기적인 측정을 E4980A capacitor parameter analyzer와 Agilent 81104A pulse pattern generator system을 이용한 전기용량-전압 측정을 통해 전하저장 효과 및 메모리 동작 특성들을 분석하고, 열처리 조건에 따라 형성되는 V3Si 의 조성을 엑스선 광전자 분광법을 이용하여 확인하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.5
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• pp.682-687
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• 2022

In this paper, the research results on monolithic three-dimensional integrated-circuit (M3DICs) stacked with tunneling field effect transistors (TFETs) are introduced. Unlike metal-oxide-semiconductor field-effect transistors (MOSFETs), TFETs are designed differently from the layout of symmetrical MOSFETs because the source and drain of TFET are asymmetrical. Various monolithic 3D inverter (M3D-INV) structures and layouts are possible due to the asymmetric structure, and among them, a simple inverter structure with the minimum metal layer is proposed. Using the proposed M3D-INV, this M3D logic gates such as NAND and NOR gates by sequentially stacking TFETs are proposed, respectively. The simulation results of voltage transfer characteristics of the proposed M3D logic gates are investigated using mixed-mode simulator of technology computer aided design (TCAD), and the operation of each logic circuit is verified. The cell area for each M3D logic gate is reduced by about 50% compared to one for the two-dimensional planar logic gates.

• Journal of Satellite, Information and Communications
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• v.2 no.2
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• pp.69-74
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• 2007

Recently, the demands for the satellite broadband mobile communication services are increased. To provide these services, mobile satellite communication systems for the passengers or crews on the high-speed moving vehicles, are being developed for the last several years especially in the Europe and North America. However, most of these systems can provide only several hundred kbps of transmission rate and this is not enough performance to provide satellite internet service for the group users such as passengers on the high-speed train. Moreover, service availability with these systems is limited to be rather low because they don't have any countermeasure scheme for the N-LOS environment which happens often along the railway. This paper describes mobile broadband satellite communication system, which is on the development, to provide high data-rate internet services to the high-speed trains. This system is applied with the inter-networking scenarios of both satellite/terrestrial network and satellite/gap-filler network so that it can provide seamless service even in the train operating environment, and these inter-networking schemes result in high service availability. And this system also has the countermeasure schemes, such as upper layer FEC and antenna diversity, for the short fading which is occurred periodically on the railway due to the power supplying structures so that it can provide high speed internet services. Mobile DVB-S2 technology which is now being standardized in the DVB is used for the forward-link transmission and DVB-RCS for the return-link.