• Title/Summary/Keyword: 탄탈륨

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Study on Manufacture of Tantalum Powder from Tantalum Scrap using Hydride-Dehydride Process (HDH Process) (수소화-탈수소화법을 이용한 탄탈륨 스크랩으로부터 탄탈륨 분말 제조 연구)

  • Lee, Ji-eun;Lee, Chan Gi;Park, Ji Hwan;Yoon, Jin-Ho
    • Resources Recycling
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    • v.27 no.5
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    • pp.30-37
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    • 2018
  • For recylcing of high purity tantalum (Ta) scrap, We investigated manufacture of tantalum powder using hydride-dehydride (HDH) process. Tantalum had excellent properties such as ductile, hardness and high melting point. Usually these properties made difficult to make a powder. In this study, Tantalum powder was manufactured using Tantalum hydride via hydridation. Tantalum hydride was formed at $500^{\circ}C$, 5 hr/$700^{\circ}C$, 3 hr and it is easy to make a tantalum hydride powder because hydrogen in the tantalum act as a defect dislocation and lattice expansion. The powder was pulverized to a size of less than $10{\mu}m$ under a condition of 1300 rpm, 30 min using a ring mill, and tantalum powder with less than 50 ppm hydrogen was prepared through dehydridation in an Ar and low vacuum atmosphere.

A Preliminary Study on Tantalum Recycling from Obsolete Condenser by Multidisciplinary Process (융복합기술(融複合技術)에 의한 폐(廢)콘덴서로부터 탄탈륨 재활용(再活用) 기초연구(基礎硏究))

  • Lee, Hoo-In;Kim, Sang-Bae;Kim, Byong-Gon;Choi, Young-Yoon
    • Resources Recycling
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    • v.16 no.6
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    • pp.34-38
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    • 2007
  • For recycling of tantalum from obsolete condenser, physical separations and chlorination of tantalum scraps with $Cl_2$ and $CCl_4$ were investigated. The recovery ratio of tantalum from obsolete condenser was 98% by using a multidisciplinary process of crushing by stamp mill, wet gravity separation by the shaking table, and air classification. In the chlorination reaction of non-oxidized Ta anode with $Cl_2$, the highest weight loss ratio is at least 60%, while in the chlorination reaction of Ta anode with $CCl_4$, the reaction rate for the oxidized Ta anode is faster than that of the non-oxidized Ta anode.

Recovery of Tantalum Anode from Waste Tantalum Condenser by Air Classification (공기분급에 의한 폐콘덴서로부터 탄탈륨 회수)

  • Kim Sang-Bae;Cho Sung-Baek;Cho Keon-Joon;Kim Yoon-Jong;Lee Jae-Chun;Kim Won-Baek
    • Resources Recycling
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    • v.12 no.3
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    • pp.3-12
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    • 2003
  • Physical separation containing grinding, sieving, dry magnetic separation and air classification were carried out in order to recover Ta anode from waste Ta condenser. Roll crusher wat used for the liberation of resin and metals in closed circuit system. The liberation between Ta anode and resin was easily achieved, whereat some of metals did not liberated from the Ta anode when the waste condenser was crushed below 8 mesh. When the crushed sample were divided into 8/10 mesh, 10/18 mesh and -18 mesh, metals was mainly remained in 8/10 mesh in contrast to Ta anode was in +18 mesh. It was shown that resin was more easily crushed rather than metals from the result of that resin content was 71.5% in -18 mesh. The liberation efficiency was different with the input size of the crushed sample and average efficiency was 62.3% due to the locked Ta anode particles. The results of air classification test for the crushed samples showed that optimal air flow are 39㎥/h, 32㎥/h, 20㎥/h. respectively. When the sample were separated with optimal condition, 94.45% Ta anode containing 97.47 wt.% Ta anode, 0.93 wt.% resin. 1.61 wt.% metal was recovered with 49.39 wt.% yield.

Hydrogen Response Characteristics of Tantalum Oxide Layer Formed by Rapid Thermal Oxidation at High Temperatures (고온에서 급속열산화법으로 형성된 탄탈륨산화막의 수소응답특성)

  • Seong-Jeen Kim
    • Journal of IKEEE
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    • v.27 no.1
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    • pp.19-24
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    • 2023
  • Since silicon having a band gap energy of about 1.12 eV are limited to a maximum operating temperature of less than 250 ℃, the sample with MIS structure based on the SiC substrate of wide-band gap energy was manufactured and the hydrogen response characteristics at high temperatures were investigated. The dielectric layer applied here is a tantalum oxide layer that is highly permeable to hydrogen gas and shows stability at high temperatures. It was formed by RTO at a temperature of 900 ℃ with tantalum. The thickness, depth profiles, and leakage current of the tantalum oxide layer were analyzed through TEM, SIMS, and leakage current characteristics. For the hydrogen gas response characteristics, the capacitance change characteristics were investigated in the temperature range from room temperature to 400 ℃ for hydrogen gas concentrations from 0 to 2,000 ppm. As a result, it was confirmed that the sample exhibited excellent sensitivity and a response time of about 60 seconds.