• Resources Recycling
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• v.27 no.5
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• pp.30-37
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• 2018

For recylcing of high purity tantalum (Ta) scrap, We investigated manufacture of tantalum powder using hydride-dehydride (HDH) process. Tantalum had excellent properties such as ductile, hardness and high melting point. Usually these properties made difficult to make a powder. In this study, Tantalum powder was manufactured using Tantalum hydride via hydridation. Tantalum hydride was formed at $500^{\circ}C$, 5 hr/$700^{\circ}C$, 3 hr and it is easy to make a tantalum hydride powder because hydrogen in the tantalum act as a defect dislocation and lattice expansion. The powder was pulverized to a size of less than $10{\mu}m$ under a condition of 1300 rpm, 30 min using a ring mill, and tantalum powder with less than 50 ppm hydrogen was prepared through dehydridation in an Ar and low vacuum atmosphere.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.174-181
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• 2003

Ta diffusion barriers have been deposited on Si (100) substrate by applying a negative substrate bias voltage. The effect of the substrate bias voltage on the properties of the Ta films was investigated. In the case of the Ta films deposited without the substrate bias voltage, a columnar structure and small grains were observed distinctly, and the electrical resistivity of the deposited Ta films was very high (250 $\mu\Omega$cm). By applying the substrate bias voltage, no clear columnar structure and grain boundary were observed. The resistivity of the Ta films decreased remarkably and at a bias voltage of -125 V, reaching a minimum value of 40 $\mu\Omega$cm, which is close to that of Ta bulk (13 $\mu\Omega$cm). The thermal stability of Cu(100 mm)/Ta(50 mm)/Si structures was evaluated after annealing in H2 atmosphere for 60 min at various temperatures. The Ta films deposited by applying the substrate bias voltage were found to be stable up to $600^{\circ}C$, while the Ta films deposited without the substrate bias voltage degraded at $400^{\circ}C$.

• Resources Recycling
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• v.21 no.2
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• pp.59-65
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• 2012

The refining effect of tantalum by electron beam melting(EBM) process for recycling tantalum scraps was investigated in the study. The purity of the tantalum metals refined by EBM was evaluated using glow discharge mass spectrometry (GDMS). From the result of GDMS, most impurities in the tantalum metals were removed by EBM down to a few mass ppm levels. The purity of the refined tantalum scraps was improved up to 5N (99.9991%) from 4 N (99.996%) of the initial tantalum scraps. The amount of metallic impurities in the tantalum was decreased from 30 ppm to 8 ppm. In addition, the gaseous impurities in the tantalum were decreased from 470 ppm to 50 ppm. Therefore a possibility of refining method for recycling tantalum scraps by EBM process was confirmed in this study.

• Resources Recycling
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• v.16 no.6
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• pp.34-38
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• 2007

For recycling of tantalum from obsolete condenser, physical separations and chlorination of tantalum scraps with $Cl_2$ and $CCl_4$ were investigated. The recovery ratio of tantalum from obsolete condenser was 98% by using a multidisciplinary process of crushing by stamp mill, wet gravity separation by the shaking table, and air classification. In the chlorination reaction of non-oxidized Ta anode with $Cl_2$, the highest weight loss ratio is at least 60%, while in the chlorination reaction of Ta anode with $CCl_4$, the reaction rate for the oxidized Ta anode is faster than that of the non-oxidized Ta anode.

• Resources Recycling
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• v.12 no.3
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• pp.3-12
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• 2003

Physical separation containing grinding, sieving, dry magnetic separation and air classification were carried out in order to recover Ta anode from waste Ta condenser. Roll crusher wat used for the liberation of resin and metals in closed circuit system. The liberation between Ta anode and resin was easily achieved, whereat some of metals did not liberated from the Ta anode when the waste condenser was crushed below 8 mesh. When the crushed sample were divided into 8/10 mesh, 10/18 mesh and -18 mesh, metals was mainly remained in 8/10 mesh in contrast to Ta anode was in +18 mesh. It was shown that resin was more easily crushed rather than metals from the result of that resin content was 71.5％ in -18 mesh. The liberation efficiency was different with the input size of the crushed sample and average efficiency was 62.3% due to the locked Ta anode particles. The results of air classification test for the crushed samples showed that optimal air flow are 39㎥/h, 32㎥/h, 20㎥/h. respectively. When the sample were separated with optimal condition, 94.45％ Ta anode containing 97.47 wt.％ Ta anode, 0.93 wt.％ resin. 1.61 wt.％ metal was recovered with 49.39 wt.％ yield.

• Journal of Korean Electronics
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• v.3 no.3-4
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• pp.69-72
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• 1983

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.22-28
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• 2004

Ta films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -125 V ($V_{s}$ = -125 V) using a non-mass separated ion beam deposition system. To investigate the effect of the negative substrate bias voltage on the impurity concentration in the Ta films, secondary ion mass spectrometry (SIMS) was used to determine impurities in the Ta films. By the SIMS depth profiles with $Cs^{+}$ cluster ion beam, high intensities of O, C and Si were clearly found in the Ta film at $V_{s}$ = 0 V, whereas these impurities remarkably decreased in the Ta film at $V_{s}$ = -125 V. Furthermore, from the SIMS result with $Cs^{+}$ and $O_2^{+}$ ion beams, it was found that applying the negative substrate bias voltage could affect individual impurity contents in the Ta films during the deposition. Discussions concerning the effect of the negative substrate bias voltage on the impurity concentration of Ta films will be described in details.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.357-357
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• 2009

• Journal of the Korean Society of Radiology
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• v.7 no.3
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• pp.245-249
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• 2013

Neutron sources from photonuclear reaction with 46-MeV electron linear accelerator at Research Reactor Institute, Kyoto University used for resonance energy measurement of natural tantalum. BGO($Bi_4Ge_3O_{12}$) scintillation detectors used for measurement of the prompt gamma ray from the natural tantalum sample. The BGO spectrometer was composed geometrically as total energy absorption detector. The electric signal from the spectrometer was analyzed for TOF(Time-of-Flight) spectrum which is used identification of neutron capture resonance energy. In this study, the neutron energy region is from 1 to 200 eV, because of strong X-ray effect produced photonuclear reaction in Ta target, the measurement was performed to below 1 keV energy region. The resonance energy was compared with the evaluated values(ENDF/B-VI, Mughabghab). All of the resonances from 4.28 ~ 200 eV were seen in the present measurement except 144.3 eV resonance.

• Journal of the Korean Vacuum Society
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• v.13 no.2
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• pp.79-85
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• 2004

Secondary ion mass spectrometry(SIMS) and glow discharge mass spectrometry(GDMS) were used to determine the impurity concentrations of hydrogen, carbon, and oxygen elements in the Cu and Ta films, and the results of SIMS and GDMS analysis were carefully considered. The Cu and Ta films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -50 V(Cu films) or -125 V(Ta films) using a non-mass separated ion beam deposition method. As a result of SIMS with Cs+ ion beam, in the case of the Cu and Ta films deposited without the substrate bias voltage, many strong peaks were observed, which is considered to be detected as a the cluster state such as CxHx, OxHx, CxOxHx. All the peaks of SIMS results could be interpreted by the combination of these dominant impurities. Moreover, it was confirmed that the quantitative results of GDMS analysis were accordant to the SIMS results.