• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

• 수산해양기술연구
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• 제38권3호
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• pp.209-216
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• 2002

본 연구에서는 중층트롤의 해상실험에서 Scanmar시스템으로 여러가지 요소를 측정한 자료에, 줄에관해 신장을 포함하여 간이 해석적(semi-analytic)으로 푼 3차원 해석을 중층트롤 어구시스템의 끌줄에 적용시키고, 전개판 뒤쪽의 줄들의 형상을 임의의 지수함수(Y$_{r}$ = $A\chi$$_{r}$ $^{B}$ ) 곡선으로 대응시켜, 중층트롤의 어구(날개 및 자루그물)의 형상을 타원추대의 일부분으로서 (equation omitted)형태로 가정하여 구하는 새로운 방법을 나타냈었다. 실제의 전개판은 예망중 진동한다고 알려져 있으며, 어느 각도 내에서는 안정성이 있기 때문에 양.항력계수는 기존의 종만곡 V형 전개판의 모형실험으로부터 영각이 15$^{\circ}$ 부터 최대값인 22$^{\circ}$ 까지의 값을 평균하여 사용하였다. 본 연구에서는 끌줄의 길이가 300m인 경우에 대한 결과를 나타내었는데, 망입구의 형상(b$_{e}$ /a/seb e/)은 예망속도가 빨라점에 따라 수직으로 긴 타원형에서 수평으로 커져가는 타원형이 됨을 알 수 있다 이때, 망고(즉 옆망이 망고 형성에 기여한 높이와 삼각망 및 천장망이 기여한 높이)는 낮아졌는데, 옆망이 낮아지는 것보다 천장망의 높이가 더 작아짐을 알 수 있다. 뜸줄이 수평과 이룬 경사각(a)은 이 예의 경우에서 약 9$^{\circ}$~11$^{\circ}$ 사이였으며, 예망속도가 빨라질수록 경사각이 작아졌다.