• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.4 s.175
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• pp.858-865
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• 2000

It is well recently recognized that quench is one of the serious problems for the integrity of superconducting magnets, which is mainly attribute to the rapid temperature rising in the magnet due to some extrinsic factors such as conductor motion, crack initiation etc. In order to apply acoustic emission(AE)echnique effectively to monitor and diagnose superconducting magnets, it is essential to identify the sources of acoustic emission. In this paper, an acoustic emission technique has been used to monitor and diagnose quenching phenomenon in racetrack shaped superconducting magnets at cryogenic environment of 4.2K. For these purposes special attention was paid to detect AE signals associated with the quench of superconducting magnets. The characteristics of AE parameters have been analyzed by correlating with quench number, winding tension of superconducting coil and charge rate by transport current. In addition, the source location of quench in superconducting magnet was also discussed on the basis of correlation between magnet voltage and AE energy.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.11
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• pp.2085-2092
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• 2016

One of the most important properties of the IC substrate is that it should be uniform over large areas. Among the various physical approaches of wafer defect characterization, special attention is to be payed to the infrared techniques of inspection. In particular, a high spatial resolution, near infrared absorption method has been adopted to directly observe defects in semi-insulating GaAs. This technique, which relies on the mapping of infrared transmission, is both rapid and non-destructive. This method demonstrates in a direct way that the infrared images of GaAs crystals arise from defect absorption process. A new interpretation is presented for the observed reversal of contrast in the infrared absorption of nonuniformly distributed deep centers, related to EL2, in semi-insulating GaAs. The low temperature photoquenching experiment has demonstrated in a direct way that the contrast inverse images of GaAs wafers arise from both absorption and scattering mechanisms rather than charge re-distribution or local variation of bandgap.