• Proceedings of the KSME Conference
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• 2004.11a
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• pp.1569-1573
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• 2004

Two ring-type conductance meters were manufactured to measure void fraction and its propagation speed in slug flow. The signal of conductance meter with two rings depends on liquid temperature. Therefore a conductance meter with separated probe designed by Coney (1973), which is independent of liquid temperature, was used and experimentally proved. The manufactured conductance meters showed a good repeatability and agreement with the analytical solution by Coney (1973). From time lag between two conductance meter, we could calculate the propagation speed of void fraction.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.6
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• pp.30-38
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• 1998

In this paper, a new CMOS current-mode integrator is proposed that can apply the basic building block of the low-voltage high frequency current-mode active filter. And tuning circuits that control the gain and unity gain frequency of them is designed. The proposed integrator is composed of the CMOS complementary circuit which can extend transconductance of an integrator. Therefore, the unity gain frequency which is determined transconductance and MOSFET gate capacitance can be expanded by the proposed integrator. The unity gain frequency of the proposed integrator is increased about two times larger than that of the conventional continuous-time integrator with NMOS-gm. And also, cut-off frequency and gain of the active filter can be controlled with the designed tuning circuit. From the result, we can reduce errors on fabrication. And then, 3rd-order low-pass active filter is designed as an application circuits. These results are verified by the small signal analysis and the 0.8$\mu\textrm{m}$ parameter HSPICE simulation.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.69.2-69.2
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• 2015

가속기의 진공용기는 안지름이 대략 20~40 mm 정도로 아주 작지만 길이는 수백 미터 이상이다. 이 같은 진공장치에서 기체 컨덕턴스가 그 진공성능을 결정하게 되며 점점 더 작아지고 있다. 이때 진공배기 방법은 주로 균등배기(distributed pumping)을 하는 데 초기에는 distributed ion pump와 Strip NEG를 주로 사용하였으며 최근에는 coated NEG가 대세이다. 균등배기의 또 다른 한 가지 방법으로 작은 동전 모양의 게터를 사용하여 그 성능을 평가하여 보고하고자 한다.

• Journal of the Korea Computer Industry Society
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• v.2 no.10
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• pp.1253-1260
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• 2001

In this paper, a new voltage-controlled tunable analog active element for low-voltage applications and information protection is proposed. The proposed active element is composed of the CMOS complementary cascode circuit which can extend transconductance of an element. Therefore, the unity gain frequency which is determined transconductance is increased than that of the conventional element. And then these results are verified by the $0.25\mutextrm{m}$ CMOS n-well parameter HSPICE simulation. As a result, the gain and the unity gain frequency are 42㏈ and 200MHz respectively in the element on 2V supply voltage. And power dissipation of the designed circuit is 0.32mW.

• The Journal of the Acoustical Society of Korea
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• v.16 no.3
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• pp.106-113
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• 1997

A 3V CMOS continuous-time fully-balanced integrator for low-voltage analog-digital mixed-mode signal processing is designed in this paper. The basic architecture of the designed fully-balanced integrator is complementary circuit which is composed of NMOS and PMOS transistor. And this complementary circuit can extend transconductance of an integrator. So. the unity gain frequency, pole and zero of integrator are increased by the extended transconductance. The SPICE simulation and small signal analysis results show that the UGF, pole and zero of the integrator is increased larger than those of the compared integrtors. The three-pole active low-pass filter is designed as a application circuit of the fully-balanced integrator, using 0.83V CMOS processing parameter.

• Journal of Korea Multimedia Society
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• v.6 no.2
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• pp.319-324
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• 2003

In this paper, a new wideband tunable analog element for multimedia system is proposed. The proposed active element is composed of the complementary cascode circuit which can extend transconductance of an element. Therefore, the unity gain frequency which is determined transconductance is increased than that of the conventional element. And then these results are verified by the 0.22$\mu\textrm{m}$ CMOS n-well parameter simulation. As a result, the gam and the unity gam frequency are 42dB and 200MHz on 2V supply voltage. And power dissipation of the designed element is 0.32mW.

• 전자공학회논문지 IE
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• v.44 no.2
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• pp.1-7
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• 2007

The increasing high frequency capabilities of CMOS have resulted in increased RF and analog design in CMOS. Design of RF and analog circuits depends critically on device S-parameter characteristics, magnitude of real and imaginary components and their behavior as a function of frequency. Utilization of scaled high performance CMOS technologies poses challenges as concerns for reliability degradation mechanisms increase. It is important to understand and quantify the effects of the reliability degradation mechanisms on the S-parameters and in turn on small signal model parameters. Various physical effects influencing small-signal parameters, especially the transconductance and capacitances and their degradation dependence, are discussed in detail. The measured S-parameters of H-gate and T-gate devices in a frequency range from 0.5GHz to 40GHz. All intrinsic and extrinsic parameters are extracted from S-parameters measurements at a single bias point in saturation. In this paper we discuss the analysis of the small signal equivalent circuits of RF SOI MOSFET's verificated for the purpose of exacting the change of parameter of small signal equivalent model followed by device flame.

• Proceedings of the IEEK Conference
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• 2000.09a
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• pp.983-986
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• 2000

본 논문에서는 저전압(2V) 동작이 가능하도록 완전차동 구조의 아날로그 능동소자에 전압조절을 위한 튜닝 회로를 추가한 능동소자를 제안하였다. 아날로그 능동소자는 이득특성에 영향을 주는 트랜스컨덕턴스값을 증가시키기 위해 CMOS 상보형 캐스코드 방식을 이용하여 구성되었다. 0.25㎛ CMOS n-well 공정 파라미터를 이용한 HSPICE 시뮬레이션 결과, 제안된 아날로그 능동소자는 비우성극점의 제거로 안정성이 향상되었으며, 2V 공급전압하에서 42dB의 이득값과 200MHz의 단위 이득주파수 특성을 나타내었다. 소비전력값은 0.32mW를 나타내었다.

• Journal of Biomedical Engineering Research
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• v.21 no.5
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• pp.477-485
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• 2000

본 논문에서는 신경신호기록을 위한 반도체 미세전극용 전치증폭기의 잡음특성을 설계하기 위한 체계적인 방법을 제시한다. 세포외기록(extracellular recording)에 의하여 측정된 신경신호와 전형적인 CMOS소자의 저주파 잡음특성을 함계 고려하여 전체 신호대잡음비를 계산하였다. 2단 CMOS 차동증폭기에 대한 해석과 함께 신호대잡음비에 중요한 영향을 끼치는 요소들에 대하여 설명하였다. 출력잡음전력에 대한 해석적인식을 유도하였으며 이로부터 회로설계자가 조절할 수 있는 주파수응답과 소자 파라미터들을 결정하였다. 입력소자의 크기와 트랜스컨덕턴스의 비가 최적영역으로부터 약간 벗어날 경우에 신호대잡음비가 크게 저하됨을 보였다. 이와 함께 만족스런 잡음특성을 위한 증폭이의 설계 변수 값들도 제시하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.8
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• pp.1885-1890
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• 2013

In this paper, the electrical properties of nanoscale junctionless p-channel MuGFET at cryogenic temperature have been analyzed experimentally. The experiment was performed using a cryogenic probe station which uses the liquid Helium. It has been observed that the drain current oscillation at low drain voltage and cryogenic temperature was more pronounced in junctionless transistor than in accumulation mode transistor. The reason for more marked oscillation is due to the smaller electrical cross section area of the inversion channel which is formed at the center of silicon film in junctionless transistor. It was also observed that the drain current and maximum transconductance were increased as the measurement temperature increased. This is resulted from the increase of hole mobility and the decrease of the threshold voltage as the measurement temperature increases. The drain current oscillation due to the quantum effects can be occurred up to the room temperature when the device size scales down to the nanometer level.