• Applied Microscopy
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• v.19 no.1
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• pp.89-108
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• 1989

알루미늄-4%동 계에서의 ${\theta}$ 및 ${\theta}'$ 석출물과 석출물/기지 계면 전위를 투과전자현미경상으로 관찰하고 콘트라스트 실험 및 석출물 분석으로 석출물/기지 계면의 정합성과 여러 전위들의 Burgers 벡타를 규명하였다. 실험 결과, 변형장은 정벽면에 수직으로 되어 있고, 판상의 ${\theta}'$ 석출물은 {100}형 정벽면을 지니고 있었다. ${\theta}'$판 주위의 전위는 정벽면에 수직인 Burgers 벡타를 지닌 칼날전위였다. 그리고, 석출물과 기지 사이의 접합변형을 작게하기 위한 계면전위의 Burgers 벡타는 a<100>과 a/2<100>형이었다. 또한 Hornbogen의 예견과 일치하는 사실로, ${\theta}'$의 석출물의 끝부분에서 ${\theta}$상이 핵생성을 하는 사실을 발견하였다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.4
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• pp.1177-1185
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• 1996

The crack growth under creep condition is one of the major damage mechanisms which determines remaining life of the component operating at high temperatures. In this paper, the creep crack growth by grain boundary cavitation is studied, which is frequently observed failure mechanism for creep brittle materials. As a result of diffusive growth of creep cavities, it is shown that the crack-tip stress field is modified from the original stress distribution by the amount of singularity attenuation parameter which is function of crack growth rate and material properties. Also, the stress relaxation at crack-tip results in the extension of cavitating area by the load dump effect to meet the macroscopic force equilibrium conditdion.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.3
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• pp.135-139
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• 2018

In this study, we report the effect of VI/III ratio on ${\alpha}-Ga_2O_3$ epilayer on sapphire substrate by halide vapor phase epitaxy. The surface of ${\alpha}-Ga_2O_3$ epilayer grown with various VI/III ratios was flat and crack-free. To analyze the optical properties of the ${\alpha}-Ga_2O_3$ epilayers, the transmittance and an optical band gap were measured. The optical band gap was shown to be around 5 eV and showed a proportional increase in VI/III ratios. To determine the crystal quality of alpha gallium oxide grown with a ratio of 23, closed to the theoretical optical band gap, the FWHM was measured by HR-XRD. The calculated dislocation density of screw and edge were $1.5{\times}10^7cm^{-2}$ and $5.4{\times}10^9cm^{-2}$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.3
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• pp.96-102
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• 2020

In this paper, AlN epilayers on 6H-SiC (0001) substrate are grown by mixed source hydride vapor phase epitaxy (MS-HVPE). AlN epilayer of 0.5 ㎛ thickness was obtained with a growth rate of 5 nm per hour. The surface of AlN epilayer grown on 6H-SiC (0001) substrate was investigated by field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDS). Dislocation density was considered through HR-XRD and related calculations. A fine crystalline AlN epilayer with screw dislocation density of 1.4 × 10⁹ cm^-2 and edge dislocation density of 3.8 × 10⁹ cm^-2 was confirmed. The AlN epilayer on 6H-SiC (0001) substrate grown by using the mixed source HVPE method could be applied to power devices.