• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.20 no.7
• /
• pp.2397-2408
• /
• 1996

A numerical study was made of the control of transient oscillatory flow modes in Czochralski convection. The reduction of temperature oscillation was achieved by changing the rotation rate of crystal rod, .OMEGA.$_{S}$=.OMEG $A_{S0}$(1+ $A_{S}$sin(2.pi. $f_{S}$/ $t_{p}$t)). The temporal behavior of oscillation flow was scrutinized over broad ranges of two parameters, i.e., the rotation amplitude( $A_{S}$.leq.0.5) and the nondimensional frequency (0.9.leq. $f_{S}$.leq.1.5). The mixed convection parameter was ranged 0.225.leq.Ra/PrR $e^{2}$.leq.0.929, which encompassed the buoyancy-and forced-dominant convection regimes. Computational results revealed that the temperature oscillations could be reduced effectively by a proper adjustment of the control parameters. The uniformity of temperature distribution near the crystal rod was examined. The control of oscillatory flow modes was also made for a realistic, low value of Pr.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.19 no.5
• /
• pp.1308-1318
• /
• 1995

The influence of varying rotation speed of both crystal and crucible was numerically investigated for the Czochralski silicon-crystal growth. Based on a simplified model assuming flatness of free surfrae, the Navier-Stokes Boussinesq equations were employed to identify the flow pattern, temperature distribution as well as the shape of the melt/crystal interface. The present results showed that the interface shape was relatively convex with respect to the melt at lower pulling rate and tended to be concave as the pulling rate increased. In particular, the experimentally observed gull-winged shape of the interface was qualitatively in agreement with the predicted shape. The rotation of crystal alone little affected the growth system. When the rotation speed of the crucible was increased, there occurred inversion of the interface shape from convex to concave pattern. At rapid rotation of the crucible, an interesting channel formation was predictied primarily due to the assumption of laminar flow.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.23 no.3
• /
• pp.388-397
• /
• 1999

Numerical simulations are carried out for the magnetic Czochralski single crystal growth system. It Is shown that a magnetic field significantly suppresses the convective flow and as the strength of magnetic field becomes to be stronger, the heat transfer in the melt is dominated by conduction rather than convection. By imposing a cusp magnetic field, the growth interface shape becomes convex toward the melt. When the axial magnetic field is imposed, there occurs an inversion of the interface shape with increase of the magnetic field strength. The oxygen concentration near the interface decreases with increasing cusp magnetic field strength while axial field causes an increase of an oxygen concentration at the central region and decrease of that at the edge of the crystal. The results show that the cusp magnetic field has advantages over an axial magnetic field In the radial uniformity of oxygen as well as in the additional degree of control.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.25 no.12
• /
• pp.1667-1675
• /
• 2001

Numerical simulations are carried out for the liquid encapsulant Czochralski(LEC) by imposing a magnetic field. The use of a magnetic field to the crystal growth is to suppress melt convection and to improve the homogeneity of the crystal. In the present numerical investigation, we focus on the range of 0-0.3Tesla strength for the axial and cusped magnetic field and the effect of the magnetic field on the melt-crystal interface, flow field and temperature distribution which are the major factors to determine the quality of the single crystal are of particular interest. For both axial and cusped magnetic field, increase of the magnetic field strength causes a more convex interface to the crystal. In general, the flow is weakened by the application of magnetic field so that the shape of the melt-crystal interface and the transport phenomena are affected by the change of the flow and temperature field.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.3 no.1
• /
• pp.1-11
• /
• 1993

A suppression of turbulent fluid motion and a control of oxygen and dopants could be improved by application of magnetic field in Czochralski growth of silicon. The effect of an axial magnetic field on Czochralski system was numerically calculated. The fluid motions induced by temperature gradients and by crystal and crucible rotations were suppressed by magnetic force. The S/L interface was gradually flattened in proportion to the increase of magnetic field due to a reduced ascending velocity in the vicinity of center line. The t.emperature distributions in the melt at 8=0.3 Tesla were similar to those analyzed by the conduction heat transfer only. The dissipated amounts of heat flux from melt and crystal surfaces by Ar gas blowing was Jess than 3 %.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.32 no.6
• /
• pp.219-224
• /
• 2022

CaF₂ single crystal has a large band gap (12 eV), and it is used for optical windows, prisms, and lenses due to its excellent transmittance in a wide wavelength range and low refractive index. Moreover, it is expected to be one of the materials for ultraviolet transmissive laser optical components. CaF₂ belongs to the fluoride compounds and has a face-centered cubic (FCC) structure with three sub-lattices. The representative method for CaF₂ single crystal growth is Czochralski, which method has the advantages of high production efficiency and the ability to make large crystals. In this study, X-ray diffraction (XRD), X-ray rocking curves (XRC) measurement, and chemical etching were performed to analyze the crystallinity and defect density of the CaF₂ single crystals, grown by the Czochralski method. Fourier-transform infrared spectroscopy (FT-IR) and UV-VIS-NIR spectroscopy systems were used to investigate the optical properties of the CaF₂ crystal. The provability of various applications, including UV application, was systematically investigated with various analysis results.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.1
• /
• pp.1-10
• /
• 1996

A numerical study was conducted on the effects of the cusp magnetic field in 8" silicon single crystal grwoth by Czochralski method. For a damping effects simulation by magnetic field, low reynolds number ${\kappa} - {\varepsilon}$ model was adopted. Symmetrci cusp magnetic field has a effect of damping streamline crystal, is lowerd with the increasing cusp magnetic field intensity. The uniformity of the oxygen concentration was improved. The asymmetirc cusp magnetic field increased the oxygen concentration however, oxygen concentration distribution in the radial direction was remained uniform. Suitable combination of symmetric and asymmetric cusp magnetic fields could give uniform and low oxygen concentration in the axial direction.tion.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.20 no.3
• /
• pp.988-1004
• /
• 1996

The characteristics of flow and oxygen concentration are numerically studied in Czochralski 8" silicon crystal growing process considering radiative heat transfer. The analysis of net radiative heat flux on all relevant surfaces shows growing crystal affects the heater power. Furthermore, the variation of the radiative heat flux along the crystal surface in the growing direction is confirmed and should be a cause of thermal stress and defect of the crystal. The calculated distributions of temperature and, heat flux along the wall boundaries including melt/crystal interface, free surface and crucible wall indicate that the frequently used assumption of the thermal boundary conditions of insulated crucible bottom and constant temperature at crucible side wall is not suitable to meet the real physical boundary conditions. It is necessary, therefore, to calculate radiative heat transfer simultaneously with the melt flow in order to simulate the real CZ crystal growth. If only natural convection is considered, the oxygen concentration on the melt/crystal interface decreases and becomes uniform by the application of a cusp magnetic filed. The heater power needed also increases with increasing the magnetic field. For the case of counter rotation of the crystal and crucible, the magnetic field suppresses azimutal flow produced by the crucible rotation, which results in the higher oxygen concentration near the interface.

• Korean Chemical Engineering Research
• /
• v.58 no.3
• /
• pp.369-380
• /
• 2020

Most mono-crystalline silicon ingots are manufactured by the Czochralski (Cz) process. But If there are oxygen impurities, These Si-ingot tends to show low-efficiency when it is processed to be solar cell substrate. For making single-crystal Si- ingot, We need Czochralski (Cz) process which melts molten Si and then crystallizing it with seed of single-crystal Si. For melts poly Si-chunk and forming of single-crystalline Si-ingot, the heat transfer plays a main role in the structure of Cz-process. In this study to obtain high-quality Si ingot, the Cz-process was modified with the process design. The crystal growth simulation was employed with pulling rate and rotation speed optimization. Studies for modified Cz-process and the corresponding results have been discussed. The results revealed that using crystal growth simulation, we optimized the oxygen concentration of single crystal silicon by the optimal design of the pulling rate, rotation speed and melt charge level of Cz-process.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.4
• /
• pp.539-543
• /
• 1998

The relationship of growth-in defects such as crystal originated particles (COP), flow pattern defects(FPD), laser scattering tomography defects (LSTD) was investigated in Cz-Si single crystals which had different pulling speed during crystal growing. It is concluded that the density and radial distribution of grown-in defects is strongly dependent on the pulling speed. And as the generation areas of these grown-in defects in a wafer are identical in radial position, they can be generated from same origin during crystal growing.