• Transactions of the Korean Society of Mechanical Engineers
• /
• v.19 no.5
• /
• pp.1308-1318
• /
• 1995

The influence of varying rotation speed of both crystal and crucible was numerically investigated for the Czochralski silicon-crystal growth. Based on a simplified model assuming flatness of free surfrae, the Navier-Stokes Boussinesq equations were employed to identify the flow pattern, temperature distribution as well as the shape of the melt/crystal interface. The present results showed that the interface shape was relatively convex with respect to the melt at lower pulling rate and tended to be concave as the pulling rate increased. In particular, the experimentally observed gull-winged shape of the interface was qualitatively in agreement with the predicted shape. The rotation of crystal alone little affected the growth system. When the rotation speed of the crucible was increased, there occurred inversion of the interface shape from convex to concave pattern. At rapid rotation of the crucible, an interesting channel formation was predictied primarily due to the assumption of laminar flow.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.2
• /
• pp.149-156
• /
• 1999

An experimental simulation on the flow in Czochralski melt using a cold model was carried out to obtain the velocities of fluid flow which affects the oxygen concentration of Czochralski crystal growing system. Low melting point Woods metal with similar Pr number to the silicon melt was adopted as a working fluid. Local flow velocities at numerous positions in the melt were simulataneously measured in three dimension using incorporated magnet probe. The measured velocity field showed a non-axisymmetric pattern dominated by natural convection. The analysis on the correlation between data set of temperatures simultaneously measured at two melt positions showed that the values of correlation coefficients were smaller than those of previous study on the small size of silicon melt and these phenomena are believed to occur because turbulent behavior becomes stronger in large size of the melt.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.1
• /
• pp.108-116
• /
• 1997

A laboratory experiment was made of critical transition flow modes in Czocllralski convection. Numerical computation was also made to delineate the dynamic transition. The period of temperature oscillation ($t_p$) and the interval of temperature oscillation ($\Delta\theta$) were scrutinized to capture the critical transition regime. The mixed convection parameter was varied in the range of $0.134\le Ra/PrRe^2 \le3.804$. The data from calculation were in good agreement with ones from experiment. The influence of the Prandtl number on the transition was examined for Pr ＝ 910, 4445 and 8889. To understand the transition mechanism, the detailed temperature oscillation modes, the isolines of meridional temperature and the axial velocity profiles were investigated.

• Korean Chemical Engineering Research
• /
• v.58 no.3
• /
• pp.369-380
• /
• 2020

Most mono-crystalline silicon ingots are manufactured by the Czochralski (Cz) process. But If there are oxygen impurities, These Si-ingot tends to show low-efficiency when it is processed to be solar cell substrate. For making single-crystal Si- ingot, We need Czochralski (Cz) process which melts molten Si and then crystallizing it with seed of single-crystal Si. For melts poly Si-chunk and forming of single-crystalline Si-ingot, the heat transfer plays a main role in the structure of Cz-process. In this study to obtain high-quality Si ingot, the Cz-process was modified with the process design. The crystal growth simulation was employed with pulling rate and rotation speed optimization. Studies for modified Cz-process and the corresponding results have been discussed. The results revealed that using crystal growth simulation, we optimized the oxygen concentration of single crystal silicon by the optimal design of the pulling rate, rotation speed and melt charge level of Cz-process.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.20 no.3
• /
• pp.988-1004
• /
• 1996

The characteristics of flow and oxygen concentration are numerically studied in Czochralski 8" silicon crystal growing process considering radiative heat transfer. The analysis of net radiative heat flux on all relevant surfaces shows growing crystal affects the heater power. Furthermore, the variation of the radiative heat flux along the crystal surface in the growing direction is confirmed and should be a cause of thermal stress and defect of the crystal. The calculated distributions of temperature and, heat flux along the wall boundaries including melt/crystal interface, free surface and crucible wall indicate that the frequently used assumption of the thermal boundary conditions of insulated crucible bottom and constant temperature at crucible side wall is not suitable to meet the real physical boundary conditions. It is necessary, therefore, to calculate radiative heat transfer simultaneously with the melt flow in order to simulate the real CZ crystal growth. If only natural convection is considered, the oxygen concentration on the melt/crystal interface decreases and becomes uniform by the application of a cusp magnetic filed. The heater power needed also increases with increasing the magnetic field. For the case of counter rotation of the crystal and crucible, the magnetic field suppresses azimutal flow produced by the crucible rotation, which results in the higher oxygen concentration near the interface.

• Korean Chemical Engineering Research
• /
• v.49 no.4
• /
• pp.432-437
• /
• 2011

Recently, industry needs a new design of Czochralski(Cz) process for higher productivity with reasonable energy consumption. In this study, we carried out computational simulations for finding out a new optimal design of Cz process with variables which can be applied in real industry such as location of heater, shape of shield and crucible size. Objective process was Cz process which can be produced 8 inch diameter Si ingot for solar cell and we acquired an optimal design for higher productivity, low power consumption with stable production condition. For higher productivity we also change the crucible diameter from 22 inches to 24 inches with changing insulation thickness only because the process housing size could not be changed in industry.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.21 no.5
• /
• pp.193-198
• /
• 2011

Recently sapphire crystals are used in LED applications. The Czochralski (CZ) growth process is one of the most important techniques for growing high quality sapphire single crystal. A successful growth of perfect single crystals requires the control of heat and mass transport phenomena in the CZ growth furnace. In this study, the growth processes of the sapphire crystal in an inductively heated CZ furnace have been analyzed numerically using finite element method. The results shown that the high temperature positions moved from the crucible surface to inside the melt and the crystal-melt interface changed to the flat shape when the rpm was increased. Also the crystal-melt interface shape has been influenced by the shoulder shape of the grown crystal during the initial stage.

• Korean Chemical Engineering Research
• /
• v.54 no.6
• /
• pp.775-780
• /
• 2016

Recently, photovoltaic industry needs a new design of Czochralski (Cz) process for higher productivity with reasonable energy consumption as well as solar cell's efficiency. If the process uses the large size reactor for increasing productivity, it is possible to produce a 12-inch, rather than the 8-inch. Also the continuous czochralski process method can be maximized to increase productivity. In this study, it was designed to improve the yield value of ingot with optimal condition which reduce consumption of electrical power. It has increased the productivity of the 12-inch ingot process condition by using CFD simulation. I have found optimal growth rate, by comparing each growth rate the interface shape, Temperature gradient, power consumption. As a result, the optimal process parameters of the growth furnace has been derived to improve for the productivity and to reduce energy. This study will contribute to the improvement of the productivity in the solar cell industry.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.34 no.1
• /
• pp.8-15
• /
• 2024

The CaF₂ single crystal has notable characteristics such as a large band gap (12 eV), excellent transparency over a wide wavelength range, low refractive index and dispersion. Due to these outstanding properties, CaF₂ single crystal has considered as a promising material for short-wavelength light sources in recent lithography processes. However, there is an inherent birefringence of the material at 157 nm and the resulting aberration can be compensated for through the combination of the (100) plane and the (111) plane. Therefore, it is necessary to investigate the characteristics according to the plane. In this study, we analyzed crystallinity, optical properties of commercial CaF₂ single crystal wafers grown by the Czochralski method. In particular, through chemical etching under various conditions, it was confirmed that the shape of etch pits appears differently depending on the plane and the shape and array of specific etch pits affected by dislocations and defects were examined.