• Korean Journal of Materials Research
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• v.9 no.1
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• pp.86-91
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• 1999

We have fabricated high-$\textrm{T}_c$ superconducting $\textrm{YBa}_{2}\textrm{Cu}_{3}\textrm{O}_{7-x}$(YBCO) grain boundary junctions at a step-edge on (001) $\textrm{SrTiO}_3$(STO) substrates. A diamond-like carbon (DLC) film grown by plasma enhanced chemical vapor deposition were used as an ion milling mask to make steps on the STO (100) single crystal and was removed by an oxygen reactive ion etch process. The c-axis oriented YBCO and TO thin films were deposited epitaxially on the STO substrate with a step-edge by pulsed laser deposition. The grain boundary junctions were formed at the top and the bottom of the step. The junctions worked at temperatures above 77 K, and had I\ulcornerR\ulcorner products of 7.5mV at 16K and 0.3 mV at 77K, respectively. The I-V characteristics of these junctions showed the shape of the two noisy resistively shunted junction model.

• Progress in Superconductivity and Cryogenics
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• v.23 no.2
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• pp.6-9
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• 2021

Heterostructures fabricated by various combinations of van der Waals (vdW) materials enable us to investigate disorder-free physical properties and realize novel functional devices. Superconducting vdW junctions have attracted a lot of attention because of its simple structure without a barrier layer. In superconducting vdW junction, without extra fabrication effort, a natural barrier can be formed, whose character is sensitive to distance and angle of lattice between two superconducting vdW materials. Using high-quality single crystals and the dry transfer technique, we fabricated the vertically stacked NbSe₂/NbSe₂ and FeSe/FeSe vdW junctions and investigated their Josephson junction properties. We found that in the FeSe junctions, Josephson coupling is extremely sensitive to the fabrication conditions, in contrast to the NbSe₂ junctions. We attributed this distinct character of the FeSe junctions to surface instability and small Fermi surface of FeSe.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.536-539
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• 2007

BSCCO am films fabricated by using the evaporation method at various substrate temperatures, Tsub and ozone gas pressures $PO_3$. Despite setting the composition of thin film Bi2223, Bi2201, Bi2212 and Bi2223 phase were appeared. It was confirmed the obtained field of stabilizing phase was represented in the diagonal direction of the right below end in the Arrhenius plot of temperature of the substrate and $PO_3$, and it was distributed in the rezone. The XRD peak of the generated film continuously changed according to the substrate temperature. This demonstrates the existence of mixed crystal composition where the phases of Bi2201, Bi2212 and Bi2223 are mixed in the crystal structure; and the single-phase film of each phase exist in a very rezone of temperature and gas pressure.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.77-77
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• 1999

박막시료의 분석에는 RBS, XPS, SIMS, AES 등이 주로 이용되고 있으며, 특히 RBS는 비교체가 필요없고 정량성이 좋다는 장점 때문에 중요하다. 그러나 RBS는 원리적으로 경원소에 대한 감도가 낮아 기판원소보다 무거운 질량을 갖는 원소의 분석에만 이용되는 것이 보통이다. 이러한 단점을 보완하기 위해 본 연구에서는 수년전부터 RBS와 비슷한 원리를 갖고 같은 장비를 이용하여 수행이 가능한 경원소 분석법인 TOF-ERDA(Time of Flight Elastic Recoil detection)을 개발하여 실용화 하였다. 본 연구실에서 보유하고 있는 미국 NEC사의 5SDH 가속기는 최대 가속전압이 1.7MV로 Cl5+ 이온을 사용하는 경우 10 MeV가 최대 가속에너지가 된다. 이런 정도의 에너지 범위에서는 TOF spectrometer의 시간분해능이 아주 높을 필요가 없고 비교적 작은 가속기로도 분석이 가능하며, 수소의 검출효율이 우수하다는 점 등 많은 장점이 있다. 그러나 한편으로는 분석가능한 깊이가 수천 $\AA$ 정도로 제한되고 질량 분해능도 수십 MeV 내지 100MeV 이상의 고에너지 이온빔을 이용하는 경우에 비해 떨어진다는 단점이 있다. 또한 묵운 원소의 분석이 불가능하기 때문에 경원소의 분석에 국한하여 적용하고 무거운 원소에 대해서는 RBS를 병용하게 된다. 본 연구에서는 일본 이화학연구소의 선형가속기인 RILAC으로부터 얻은 40MeV Ar 이온 및 138 MeV Xe 이온을 이용하여 TOF-ERDA 시스템을 제작하였다. 그러기 위해서 고에너지 이온의 비행시간을 측정하는 목적으로 높은 시간 분해능을 갖는 시간 검출기를 설계, 제작하였다. 또한 표적함 밑에는 회전원판이 있어 시간검출기 및 에너지 검출기가 중앙의 시료홀더를 중심으로 회전이 가능하도록 되었다. 회전은 표적함 밖에서 원격조정 가능하다. 이렇게 함으로써 검출각을 임의로 바꾸면서 측정이 가능하도록 하였다. 제작된 분석시스템의 성능을 확인하기 위해 YBaCuO 초전도 박막을 측정하였으며 그 결과를 그림에 나타낸다. 저 에너지 ERDA에서는 나타나기 힘든 Ba, Y, Cu 등의 무거운 원소의 피크들이 분명히 나타남을 확인할 수 있다.

• Korean Journal of Materials Research
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• v.3 no.2
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• pp.151-157
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• 1993

Abstract We have fabricated Y-Ba-Cu-O superconducting thin films by in-situ on-axis rf magnetron sputtering method using $Y_1$B$a_2$C${u_4}\;{_2O_x}$ nonstoichiometric target. Reactive ion etching (RIE) method was used in patterning the films. We have investigated the properties of patterned films, and compared the properties of the films before and after patterning. As the line width of the pattern decreases from 5${\mu}$m to 2${\mu}$m, a slight but not significant degradation in superconducting properties of the patterned films is observed. The bridge patterns are found to have clean edges and good electrical properties enough to be applied in device applications. From the result of this research, the possibility of submicron patterning by RlE is confirmed.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.459-465
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• 1994

A-axis oriened YBCO thin flims were grown on $LaAIO_{3}$ single crystal substrate by off-axis rf magnetron sputtering method. We used two kinds of process to get a-axis oriented fi1ms;one-step process and two-step process. In one-step process, films are grown in single step in which substrate temperature( $T_s$) is in the range of $590^{\circ}C$ to $680^{\circ}C$. On the other hand, in two step process a-axis oriented thin film templates i f about 30nm thickness is deposited at low temperature first, and subsequently films are grown at elevated temperature to the final thickness of about 100nm. In the case of one step process($T_s$ ~)$600^{\circ}C$), prefered a-axis orientation is dominant and Cu-rich phases segregate at the surface. Segregations decrease and ($00 \ell$) peaks increase upon increasing $T_s$. The films prepared by two step method appeared to have strong(h00) peaks as the deposition rate increased. Microstructure shows pin holes resulted from mixed phases of a-axis and c-axis oriented films. In both cases of one step and two step process, as TS decreases, prepared films show stronger a-axis orientation. However electrical properties of the films are depressed with lower $T_c$ and wider $\Delta T$ as $T_s$ decreases.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.160-164
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• 2008

The Characterization of $MgB_2$ Thin Film by Slow Positron Annihilation Spectroscopy Enhance signal-to-noise ratio, slow positron coincidence Doppler Broadening method has been applied to study of characteristics of $MgB_2$ superconductor film, which were performed at 30 K and 50 K sample temperature near Tc of it. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The S-parameter values were increased then decreased while the positron implantation energies were increasing, that indicated the diffusion into the samples. The S-parameters of the anisotropic 1 ${\mu}m$ $MgB_2$ thin film which were implanted by positrons at 10 keV are 0.567 at 30 K and 0.570 at 50 K. It is believed that the positrons annihilate with normal-electrons instead of super-electrons in the $MgB_2$ superconductor.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.27-32
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• 2004

High temperature superconducting coated conductor has a structure of /< superconducting layer>//. The buffer layer consists of multi layer, and the architecture most widely used in RABiTS approach is CeO$_2$(cap layer)/YSZ(diffusion barrier layer)/CeO$_2$(seed layer). Evaporation technique is used for the CeO$_2$ layer and DC reactive sputtering technique is used for the YSZ layer, A chamber was set up specially for DC reactive sputtering, Detailed features are as following. A separator divided the chamber into two halves a sputtering chamber and a reaction chamber. The argon gas for sputtering target elements flows out of the cap of sputtering gun, and water vapor for reaction with depositing species spouts near the substrate. Turbo pump is connected with reaction chamber. High speed deposition of YSZ film could be achieved in the chamber. Detailed deposition conditions (temperature and partial pressure of reaction gas) were investigated for the rapid growth of high quality YSZ film.

• Progress in Superconductivity
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• v.11 no.1
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• pp.8-12
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• 2009

We investigated the effects of the irradiation of light-ions on the superconducting $MgB_2$ thin films fabricated by using HPCVD. Deuterium and helium ions were irradiated on $MgB_2$ thin films by various doses, from $1{\times}10^{10}cm^{-2}\;to\;8{\times}10^{15}cm^{-2}$. During these experiments some reasonable results and unpredictable results have been obtained. The reasonable results are that the peak of the reduced maximum pinning force shifts by increasing the pinning sites in $MgB_2$ films and the slightly change of critical current density of films. We obtained some unusual results, which are the increasing of the transition temperature and the change of residual resistance ratio. Among the data of deuterium and helium ion irradiation experiments, the results of helium ion irradiation have most notable points so we will discuss mainly about helium irradiation experiments.

• Progress in Superconductivity
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• v.13 no.2
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• pp.117-121
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• 2011

We have fabricated $FeSe_x$ superconducting thin films at much different substrate temperatures of 430 and $610^{\circ}C$ on $Al_2O_3$(0001) substrates by using a pulsed laser deposition (PLD) technique. Superconducting transitions for both films were shown around 10 K, but their transition width and growth directions of grains were different. We found that superconducting tetragonal FeSe phases and non-superconducting hexagonal FeSe phases were coexisted in the sample grown at the low temperature of $430^{\circ}C$, whereas the hexagonal FeSe phase was decreased with increasing fabrication temperatures.