• New Physics: Sae Mulli
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• v.68 no.11
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• pp.1196-1202
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• 2018

$Li_2Sr_{1-x}Eu_xSiO_{4-{\alpha}}N_{\alpha}$ ($Li_2SrSiO_{4-{\alpha}}N_{\alpha}:Eu^{2+}$) phosphors were synthesized by using a solid state reaction (SSR) method with submicron $Si_3N_4$ and nano $Si_3N_4$ powders as the sources of Si and N, and the optical properties of those phosphors were studied. The studied phosphors showed efficient excitation characteristics over the broad range from 230 to 530 nm. Also, They showed broad emission spectra covering a range from 500 to 700 nm, with a peak at 568 nm, which was shifted longer wavelength by 18 nm as compared with that of commercial $YAG:Ce^{3+}$. Combined with a 450 nm blue LED chip, the results support the application of the $Li_2SrSiO_{4-{\alpha}}N_{\alpha}:Eu^{2+}$ phosphor as a luminescent material for a white-light source thaat is warmer than the commercial $YAG:Ce^{3+}$ white-light source. In addition, the $Li_2SrSiO_{4-{\alpha}}N_{\alpha}$ phosphors prepared from a submicron $Si_3N_4$ powder was found to emit a previously unreported self-activated luminescence in $Li_2SrSiO_{4-{\alpha}}N_{\alpha}$.

• Journal of the korean academy of Pediatric Dentistry
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• v.32 no.4
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• pp.634-643
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• 2005

The aim of this study is to evaluate the effects of blue light emitting diode (LED) Light Curing Units (FreeLight 2, L.E.Demetron I, Ultra-Lume 5) on the microhardness of three resin composites (Z250, Point 4, Dyract AP) and to determine their optimal curing time. Samples were made using acrylic molds $(2.0mm{\times}3mm)$ of each composite. All samples were prepared over a Mylar strip placed on a flat glass surface. After composite placement on the molds, the top surface was covered with another Mylar strip and a glass slab was gently pressed over it. The times of irradiation were as follows: Elipar TriLight, 40 s; Elipar FreeLight 2. L.E.Demetron I, and Ultra-Lume 5, 10s, 20s, 40s, respectively. Mean hardness values were calculated at the top and bottom for each group. ANOVA and Sheffe's test were used to evaluate the statistical significance of the results. Results showed that FreeLight 2, Ultra-Lume 5, and L.E.Demetron I were able to polymerize point 4 in 20 seconds to a degree equal to that of the halogen control at 40 seconds. FreeLight 2 and L.E.Demetron I were able to polymerize Z250 in 10 seconds to a degree equal to that of the halogen control at 20 seconds. FreeLight 2 and L.E.Demetron I were able to polymerize Dyract AP in 10 seconds to a degree equal to that of the halogen control at 40 seconds. The commercially available LED curing lights used in this study showed an adequate microhardness with less than half of the exposure time of a halogen curing unit.

• Journal of Bio-Environment Control
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• v.22 no.4
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• pp.392-399
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• 2013

This study aimed to investigate responses of photosynthesis, plant growth, and phytochemical contents to different artificial light sources for 'Seneca RZ' and 'Gaugin RZ' two butterhead lettuce (Lactuca sativa L.). In this study, fluorescent lamps (FL), three colors LEDs (red, blue and white, 5 : 4 : 1; RBW) and metalhalide lamps (MH) were used as artificial lighting sources. Photoperiod, air temperature, relative humidity, EC, and pH in a cultivation system were maintained at 16/8 h, $25/15^{\circ}C$, 60~70%, $1.4{\pm}0.2dS{\cdot}m^{-1}$, and $6.0{\pm}0.5$, respectively. The photosynthetic rate of both two butterhead lettuce were the highest under RBW in middle growth stage. However, in late growth stage, the photosynthetic rate of both two butterhead lettuce were higher under RBW and MH than FL. The light sources showed significant results for plant growth but those effects were different to variety. Fresh and dry weight of 'Gaugin RZ' butterhead lettuce under MH were heavier than other lights in all growth stages. Growth of 'Seneca RZ' butterhead lettuce was maximized highest under MH in middle growth stage and FL in late growth stage. In the leaf tissue of 'Seneca RZ' butterhead lettuce, tipburn symptom occurred under all light sources and in the leaf tissue of 'Gaugin RZ' butterhead lettuce, it occurred under two light sources except for fluorescent lamps in late growth stage. kinds of lamp affect plant growth more than plant quality. Relative growth rate of both two butterhead lettuce was faster in middle growth stage than late stage. Growth of 'Gaugin RZ' was shown by kinds of lamp in middle growth stage and but it was not significantly affected by light sources and variety in late stage. Most of the phytochemical contents of two butterhead lettuce were significantly affected by different light sources. Contents of all vitamins showed higher than other light sources on RBW for both two lettuce, especially ${\beta}$-Carotene content of 'Gaugin RZ' was the highest. Plant growth, photosynthesis, and phytochemical contents were observed significant effects by different light sources for two butterhead lettuce but those effects were highly different between variety and kinds of phytochemicals. Therefore, the selection of optimum light source should be considered by variety and kinds of phytochemicals in the plant factory.

• Horticultural Science & Technology
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• v.35 no.2
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• pp.188-198
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• 2017

Asparagus (Asparagus officinalis L.) spears were treated with white (color temperature 4,500 k), blue (peak 450 nm), and red (peak 660 nm) light-emitting diodes (LEDs) at a photosynthetic photon flux density (PPFD) of $200{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$ for 12 h, and UV-B (280 nm) at 0.5 kJ or 1.0 kJ to determine the effect on agronomic characteristics, antioxidant phytochemicals, and antioxidant activity. The fresh weight, length, and width of spears were not affected by light quality treatments. The free sugars and chlorophyll contents were increased by 9 and 41%, respectively in the UV-0.5 kJ treatments. Among the antioxidant phytochemicals (vitamin C, total phenol, rutin, and total flavonoid), vitamin C was most greatly affected by the light treatments. Vitamin C content was significantly increased in asparagus spears subjected to the white (114%), red (137%), and UV-0.5 kJ(127%) treatments compared to the control. By contrast, rutin, total phenol, and total flavonoid content were increased only in samples subjected to the red and UV-0.5 kJ treatment. Furthermore, antioxidant activity, as measured by DPPH (2,2-diphenyl-1-picrylhydrazyl) radical scavenging activity, increased in white, red, and UV-0.5 kJ treatments by about 43, 41, and 43%, respectively, compared to the control. These results suggest that postharvest treatment of asparagus spears with red light at $200{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$ for 12 h or with UV-B (280 nm) at 0.5 kJ could enhance the functional quality of the asparagus spears by increasing the content of phytochemicals like vitamin C, rutin, total phenolics, and total flavonoids.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.281-286
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• 2010

Thickness effects on the structural and optical properties of ZnO thin films fabricated by spin coating method have been carried out. With increase in the thickness of the ZnO thin films, the width and density of striation shape are increased. The ZnO thin film with thickness of 450 nm has a smooth surface morphology. For the ZnO thin film with a smooth surface, orientation factor ${\alpha}_{(002)}$ is sharply increased and FWHM of (002) diffraction peak is decreased compared to the ZnO thin films with a striation shape surface. Thickness and surface morphology of the ZnO thin films hardly affect the NBE peak position. However, the DLE peak position is blue-shifted as the surface morphology is changed from striation to smooth surface. The PL intensity ratio of the NBE to DLE is increased and the FWHM of NBE peak is decreased as the thickness of the ZnO thin films is increased.

• Korean Journal of Optics and Photonics
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• v.32 no.4
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• pp.163-171
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• 2021

Conventional white light-emitting diodes (LEDs) for lighting applications consist of blue LEDs and yellow phosphors, the spectrum of which lacks deep red. To improve the color-rendering characteristics of white LEDs, a red quantum-dot film was applied to the diffuser plate of LED lighting. The mean free paths of the quantum dots and the concentration of the TiO₂ particles in the diffuser plate were adjusted to optimize the optical structure of the lighting. The color-rendering index (CRI) was greater than 90 for most conditions, which demonstrates that adoption of the red quantum-dot film is an effective way for improving the color-rendering properties of conventional white LEDs. The angular dispersion of color coordinates could be removed by utilizing the optical cavity formed between the diffuser plate and the reflector on the bottom of the lighting, where multiple passages of the light through the quantum-dot film reduced the differences in optical path length depending on the viewing angle.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.1
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• pp.1-16
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• 2023

A non-rare earth-based strontium-aluminate red light emitting phosphor was synthesized by a solid-state reaction method and the effect of synthesis temperature and Mn⁴⁺ activator concentration on the photoluminescence characteristics of the phosphor was studied. The synthesized SrAl₂O₄:Mn⁴⁺ phosphor showed broad band absorption characteristics in the near-ultraviolet and blue regions with peaks at wavelengths of near 330 and 460 nm, and a triple band deep red emission consisted of three peaks at near 644, 658, and 673 nm. The SrAl₂O₄:Mn⁴⁺ phosphor synthesized at a temperature 1600℃ and a Mn⁴⁺ activator concentration of 0.5 mol% showed the strongest PL emission intensity, and concentration quenching was observed at concentrations higher than 0.7 mol%. FE-SEM and DLS particle size distribution analysis showed that the synthesized SrAl₂O₄:Mn⁴⁺ phosphor had a particle size distribution of 2~6.4 ㎛ and an irregular spherical shape with an average particle size of ~4 ㎛.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.425-426
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• 2013

IIIN계 물질 기반의 광 반도체는 직접 천이형 넓은 밴드갭 구조를 갖고 있기 때문에 적외선부터 가시광선 및 자외선까지를 포함한 폭 넓은 발광파장 조절이 가능하여 조명 및 디스플레이 관련 차세대 광원으로 많은 관심을 받고 있다. 일반적인 청색 및 녹색 발광영역의 활성층으로는 InGaN/GaN 다중양자우물구조를 사용하고 있으나, 장파장의 녹색 발광을 얻기 위해서는 인듐의 함유량이 증가하여야 한다. 하지만, 인듐의 함유량이 증가함에 따라서 InGaN/GaN 다중양자우물 구조내에서 인듐의 편석현상의 발생이 용이하게 되어 계면 특성을 저하할 뿐 아니라, 비발광 센터를 증가하여 발광 효율을 급격히 감소시키는 원인이 되고 있다. 또한, InGaN과 GaN의 큰 성장온도의 차이에 따라 800도 부근의 저온 영역에서 성장된 InGaN층이 1,000도 이상의 고온 영역에서 GaN층이 성장시 InGaN층의 열화 현상이 급격히 발생되고 있다. 이를 억제하기 위해서 금속유기화학증착법의 성장 변수 최적화, 응력제어, 도핑 등의 편석 억제기술 및 보호층이 사용되고 있다. 본 연구에서는 인듐함유량이 증가된 녹색 InGaN/GaN 다중양자우물구조에서 InGaN 우물층 상하부에 도입된 GaN 보호층에 따라 발생되는 양자우물구조의 광학 및 결정학적 특성 분석을 통해 GaN 보호층의 역할을 분석하고자 한다. 본 연구에서는 금속유기화학증착장치를 이용하여 사파이어 기판위에 GaN 템플릿을 성장하고, n-형 GaN, InGaN/GaN 다중양자우물구조 및 p-형 층을 성장하였다. 앞선 언급하였듯이, InGaN/GaN 다중양자우물구조내에 GaN 보호층의 역할을 규명하기 위하여 샘플 A의 경우는 보호층이 전혀 없는 구조이고, 샘플 B의 경우는 InGaN 우물층의 상단부에만, 샘플 C의 경우에는 우물층 상부 및 하단부 모두에 약 2.0 nm 두께의 GaN 보호층을 형성하였다. 이 보호층의 유무에 따른 다중양자우물구조의 계면 특성을 확인하기 위한 X-선 회절을 이용하였고, 광학적 특성을 확인하고 상온 포토루미네선스법을 이용하여 녹색 발광 파장의 변화 및 발광세기를 관찰하였다. 우선적으로, 상온 포토루미네선스법을 이용하여 각 샘플의 발광특성을 확인한 바 상하부 모두에 GaN 보호층이 존재하는 샘플 C의 경우 약 510 nm 부근에서 발광이 관찰되었지만, 상단부에 GaN 보호층이 존재하는 샘플 B는 약 495 nm영역에 발광이 확인되었다. 특히, 전혀 보호층이 존재하지 않는 샘플 A의 경우 약 440 nm에서 발광하는 현상을 관찰하였다. 이는 우물층 상단부 및 하단부에 존재하는 GaN 보호층이 In의 확산을 억제하는 것으로 판단된다. 또한, 발광파장 및 세기를 확인한 바, 보호층의 존재하지 않을수록 단파장화가 발생함에도 불구하고 발광세기는 급격히 약해지는 것으로 보아 계면특성이 저하되어 비발광센터가 증가되는 것으로 판단된다. 이를 구조적으로 확인하기 위하여 X-선 회절법을 통한 ${\omega}$/$2{\Theta}$ 스캔의 결과는 In의 0차 피크가 GaN 보호층이 없을 경우 GaN의 피크 방향으로 이동하는 것으로 보아 GaN 보호층은 우물층 성장 후 GaN 장벽층을 성장하기 위해 온도를 증가시키는 과정에서 In의 확산되는 것으로 판단된다. 또한, 하부 GaN 보호층의 경우 GaN 장벽층 성장 후 온도를 감소시키는 과정에서 성장되므로, 우물층으로부터 In의 탈착현상이 아닌 장벽층과의 상호 확산으로 판단된다. 또한, 계면특성을 확인하기 위해 InGaN의 X-선 위성 피크를 확인한 바 샘플 A의 경우 매우 넓고 약한 피크가 관찰된 반면, 보호층이 존재하는 샘플 B와 C의 경우 강하고 얇은 피크가 확인되었다. 이는 GaN 보호층의 도입으로 인해 계면특성이 향상되는 것으로 판단된다. 따라서, 우리는 InGaN/GaN 다중양자우물구조에서 GaN 보호층은 상부의 열화 억제 뿐아니라, 하부의 장벽층 및 우물층 사이의 상호확산을 억제하는 GaN 보호층의 도입을 통하여 우수한 계면 특성 및 비발광센터의 억제를 얻을 수 있을 것으로 생각되며, 이는 향후 GaN계 발광다이오드의 전계 발광특성을 증가하여 우수한 발광소자를 개발할 수 있을 것으로 기대된다.