• 제목/요약/키워드: 첨단

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블랙베리(Rubus fructicosus L.) 돌연변이 유전자원의 생육특성과 형태학적 변이 분석 (Growth Characteristics and Morphological Variation Analysis of Mutant Lines Derived from Gamma-ray and Chemical Mutagen Treatments in Rubus fructicosus L.)

  • 류재혁;김동섭;하보근;김진백;김상훈;정일윤;조한직;김이엽;강시용
    • 방사선산업학회지
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    • 제6권3호
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    • pp.257-265
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    • 2012
  • This study was carried out to evaluate growth, morphological characteristics, and sugar content among fifty six blackberry (Rubus fructicosus) genotypes derived from gamma-ray treatment (fifty two lines), MNU treatments (three lines), and cross breed R. fructicosus${\times}$R. parvifolius(one line). While 56 genotypes had similar stem diameter with origin variety, the most of mutants showed reduced leaf size. Also, they showed a wide range of variation in fruit size and one hundred fruit weight compared with origin variety. In fruit size and sugar content, two mutant lines showed large fruit sizes and ten mutant lines showed 20% higher sugar content than the original variety. In the correlation analysis, positive relationships were determined between sugar content and stem diameter, fruit length, leaf wide and fruit length/fruit wide ratio. However, leaf length/leaf wide ratio showed a negative correlation with sugar content. The results will be used as fundamental data for Rubus fructicosus breeding program.

마그네트론 스퍼터링법으로 제조된 ZTZ 박막의 구조적 전기광학적 특성에 미치는 전자빔 조사의 영향 (Influence of electron irradiation on the structural and optoelectronics properties of ZTZ thin films prepared by magnetron sputtering)

  • 차병철;장진규;최진영;이인식;김대욱;김유성;김대일
    • 한국표면공학회지
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    • 제55권6호
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    • pp.363-367
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    • 2022
  • Transparent ZnO/Ti/ZnO (ZTZ) tri-layered films were prepared with radio frequency (RF) and direct current (DC) magnetron sputtering on the glass substrate. The thickness of the ZnO and Ti films was kept at 50 and 10 nm to consider the effect of the electron irradiation on the crystallization and optoelectrical properties of the films. From the XRD spectra, post-depostion electron irradiated films showed the characteristic peaks of ZnO(002) and Ti(200), respectively. the observed grain size of the ZnO(002) and Ti(200) enlarged up to 18.27 and 12.16 nm at an irradiation condition of 750 eV. In the figure of merit which means an optoelectrical performance of the films, as deposited films show a figure of merit of 2.0×10-5 𝛺-1, while the films electron irradiated at 750 eV show a higher figure of merit of 5.7×10-5 𝛺-1.

Ag 중간층이 SnO2 박막의 광학적, 전기적 특성에 미치는 영향 (Influence of Ag Interlayer on the Optical and Electrical Properties of SnO2 Thin Films)

  • 장진규;김현진;최재욱;이연학;허성보;김유성;공영민;김대일
    • 한국표면공학회지
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    • 제54권3호
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    • pp.119-123
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    • 2021
  • SnO2 single layer and SnO2/Ag/SnO2 (SAS) tri-layered films were deposited on the glass substrate by RF and DC magnetron sputtering at room temperature and then the effect of Ag interlayer on the opto-electrical performance of the films were considered. As deposited SnO2 films show a visible transmittance of 85.5 % and a sheet resistance of 1.2×104 Ω/□, the SAS films with a 15 nm thick Ag interlayer show a lower resistance of 18.8 Ω/□ and a visible transmittance of 70.6 %, respectively. The figure of merit based on the optical transmittance and sheet resistance revealed that the Ag interlayer in the SnO2 films enhances the opto-electrical performance without substrate heating or annealing process.

Ag 중간층 두께에 따른 ZnO 박막의 광학적, 전기적 특성 연구 (Effect of Ag interlayer on the optical and electrical properties of ZnO thin films)

  • 김현진;장진규;최재욱;이연학;허성보;공영민;김대일
    • 한국표면공학회지
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    • 제55권2호
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    • pp.91-95
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    • 2022
  • ZnO single layer (60 nm thick) and ZnO with Ag interlayer (ZnO/Ag/ZnO; ZAZ) films were deposited on the glass substrates by using radio frequency (RF) and direct current (DC) magnetron sputter to evaluate the effectiveness of Ag interlayer on the optical visible transmittance and the conductivity of the films. In the ZAZ films, the thickness of ZnO layers was kept at 30 nm, while the Ag thickness was varied as 5, 10, 15 and 20 nm. In X-ray diffraction (XRD) analysis, ZnO films show the (002) diffraction peak and ZAZ films also show the weak ZnO (002) peak and Ag (111) diffraction peak. As a thickness of Ag interlayer increased to 20 nm, the grain size of the Ag films enlarged to 11.42 nm and the optical band gap also increased from 4.15 to 4.22 eV with carrier concentration increasing from 4.9 to 10.5×1021 cm-3. In figure of merit measurements, the ZAZ films with a 10 nm thick Ag interlayer showed the higher figure of merit of 4.0×10-3 Ω-1 than the ZnO single layer and another ZAZ films. From the experimental result, it is assumed that the Ag interlayer enhanced effectively the opto-electrical performance of the ZAZ films.

Powder Bed Fusion 공정으로 제조한 STS 316L의 미세조직과 후속 열처리 특성 (Microstructural Analysis of STS316L Samples Manufactured by Powder Bed Fusion and Post-heat Treatments)

  • 송승윤;이동완;딘 반 꽁;김진우;이성모;주승환;김진천
    • 한국분말재료학회지
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    • 제29권1호
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    • pp.14-21
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    • 2022
  • In the powder bed fusion (PBF) process, a 3D shape is formed by the continuous stacking of very fine powder layers using computer-aided design (CAD) modeling data, following which laser irradiation can be used to fuse the layers forming the desired product. In this method, the main process parameters for manufacturing the desired 3D products are laser power, laser speed, powder form, powder size, laminated thickness, and laser diameter. Stainless steel (STS) 316L exhibits excellent strength at high temperatures, and is also corrosion resistant. Due to this, it is widely used in various additive manufacturing processes, and in the production of corrosion-resistant components with complicated shapes. In this study, rectangular specimens have been manufactured using STS 316L powder via the PBF process. Further, the effect of heat treatment at 800 ℃ on the microstructure and hardness has been investigated.

열처리 효과에 따른 SnO2 기반 수소가스 센서의 특성 최적화 (Optimization of SnO2 Based H2 Gas Sensor Along with Thermal Treatment Effect)

  • 정동건;이준엽;권진범;맹보희;김영삼;양이준;정대웅
    • 센서학회지
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    • 제31권5호
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    • pp.348-352
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    • 2022
  • Hydrogen gas (H2) which is odorless, colorless is attracting attention as a renewable energy source in varions applications but its leakage can lead to disastrous disasters, such as inflammable, explosive, and narcotic disasters at high concentrations. Therefore, it is necessary to develop H2 gas sensor with high performance. In this paper, we confirmed that H2 gas detection ability of SnO2 based H2 gas sensor along with thermal treatment effect of SnO2. Proposed SnO2 based H2 gas sensor is fabricated by MEMS technologies such as photolithgraphy, sputtering and lift-off process, etc. Deposited SnO2 thin films are thermally treated in various thermal treatement temperature in range of 500-900 ℃ and their H2 gas detection ability is estimatied by measuring output current of H2 gas sensor. Based on experimental results, fabricated H2 gas sensor with SnO2 thin film which is thermally treated at 700 ℃ has a superior H2 gas detection ability, and it can be expected to utilize at the practical applications.

p-CuO/n-ZnO 이종접합 박막 구조의 수소 가스 특성 평가 (Hydrogen Gas Sensor Performance of a p-CuO/n-ZnO Thin-film Heterojunction)

  • 양이준;맹보희;정동건;이준엽;김영삼;안희경;정대웅
    • 센서학회지
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    • 제31권5호
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    • pp.337-342
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    • 2022
  • Hydrogen (H2) gas is widely preferred for use as a renewable energy source owing to its characteristics such as environmental friendliness and a high energy density. However, H2 can easily reverse or explode due to minor external factors. Therefore, H2 gas monitoring is crucial, especially when the H2 concentration is close to the lower explosive limit. In this study, metal oxide materials and their p-n heterojunctions were synthesized by a hydrothermal-assisted dip-coating method. The synthesized thin films were used as sensing materials for H2 gas. When the H2 concentration was varied, all metal oxide materials exhibited different gas sensitivities. The performance of the metal oxide gas sensor was analyzed to identify parameters that could improve the performance, such as the choice of the metal oxide material, effect of the p-n heterojunctions, and operating temperature conditions of the gas sensor. The experimental results demonstrated that a CuO/ZnO gas sensor with a p-n heterojunction exhibited a high sensitivity and fast response time (134.9% and 8 s, respectively) to 5% H2 gas at an operating temperature of 300℃.

전자선 조사가 팽이버섯의 품질특성에 미치는 영향 (Effect of Quality Characteristics of Enoki Mushroom (Flammulina velutipes) by Electron-beam Irradiation)

  • 염서준;이건아;김상수;윤기남;송범석;박종흠;김영민;김재경
    • 방사선산업학회지
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    • 제17권1호
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    • pp.75-82
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    • 2023
  • This research was carried out to evaluate on microbiological (total aerobic bacteria, yeast and mold) and physicochemical (color, firmness, water content, water activity and weight loss) characteristics of 10MeV electron-beam irradiated(0, 0.5, 1, 2 and 3kGy) enoki mushroom during storage (0, 7, 14, 21 and 28 day) at 4℃ with 80% relative humidity. As compared to control, all irradiated samples exhibited dose-dependent decreases of microbial counts up to 28 days, and electron beam irradiation above 2 kGy kept below the microbiological safety threshold. Yellowness (b*) which is associated with discoloration of mushrooms was significantly reduced by electron beam irradiation (2 kGy). Firmness, water content, water activity and weight loss showed no significant difference in all group up to 28 days. Thus, the appropriate electron-beam irradiation dose was confirmed as 2 kGy to inhibit the microbial growth and browning reaction in enoki mushroom.