• Title/Summary/Keyword: 차폐막

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GTR 차폐막

  • 이승진;정종평
    • Polymer Science and Technology
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    • v.12 no.4
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    • pp.512-518
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    • 2001
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Healing patterns after guided bone regeneration in human extraction sockets (인간의 발치와 내에서 골유도재생술 후의 치유양상)

  • Jang, Hyun-Seon;Yeom, Chang-Yeob;Park, Joo-Cheol;Kim, Su-Gwan;Kim, Heung-Joong;Kook, Joong-Ki;Kim, Chong-Kwan;Kim, Byung-Ock
    • Journal of Periodontal and Implant Science
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    • v.35 no.4
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    • pp.949-959
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    • 2005
  • 이 연구는 임플란트를 식립하기를 원하는 전신건강상태가 양호하며 구강위생상태가 좋은 14명 환자(남자:8명, 여자:6명, 평균나이 : 44세)의 20개의 발치와 내에 흡수성 차폐막(BioMesh. Sam Yang Corporation, Korea)과 함께 탈회냉동 건조동종 골(dem-ineralized freezedried bone allografts, $250-500{\mu}m$. Pacific Coast Tissue Bank, U.S.A.)과 이종골(Bovine-Bone, Bio-Oss 0.25-1.0 mm, Geistlich, Biomaterials and Osteohealth, Switzerland)을 1:1(부피)로 혼합하여 이식한 후 그 치유양상을 관찰하고자 조직학적 및 면역조직화학적으로 평가하였다. 이직재가 탈락되는 것을 방지하기 위하여 발치한 후 1개윌이 경과된 후에 이식재와 차폐막을 위치시켰다. 표본제작을 위하여 이식술을 시행한 지 약 6개윌 후에 임플란트를 식립하기 직전 식립부위에서 trephine bur로 골을 채취하였는데, 20증례 중 7증례에서 임플란트를 식립하기 전에 차폐막이 노출되었다. 차폐막이 노출되지 않은 것을 대조군으로, 노출된 것을 실험군으로 설정하였다. 조직학적인 관찰을 위하여 통상적인 방법에 따라 탈회 표본을 제작하였고, alkaline phosphotase(ALP)틀 이용하여 면역조직화학적 염색을 시행한 후 골 형성 상태를 평가하여 다음과 같은 결과를 얻었다. 본 연구에서는 발치와내에서 골유도재생술 후 나타나는 치유 형태를 5가지 형태로 분류할 수 있었다. Type I, II와 III는 새로운 골 형성을 나타내지 않았고, 면역조직화학적 검사 시 ALP 음성 소견을 나타내었다. Type V는 새로운 골 형성과 ALP 양성 소견을 나타내었으나 염증, 괴사, 결합조직의 증식 등은 없었다. Type IV와 Type V의 차이는 결합조직의 증식여부로 구분되었다. 막이 노출되지않은 증례들 중 7 증례에서는 Type V의 치유 형태를, 2증례에서는 Type IV의 치유 형태를 나타내었다. 막이 노출되었던 증례에서는 Type I, II, III의 다양한 치유 형태를 나타내었다. 본 연구결과, 발치와 내에 골유도재생술을 시행한 후 차폐막의 노출 여부가 신생골 형성에 중요한 영향을 미칠 것으로 사료되며, 본 연구에서 분류한 치유 형태가 향후 골유도재생술 후의 결과 분석에 활용될 수 있을 것으로 사료된다.

Effects of Crystallinity and Stoichiometry on the Mobility of InSb Thin Films (InSb 박막의 결정성 및 화학양론이 이동도에 미치는 영향)

  • Lee, Jeong-Young;Lee, Byung-Soo
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.1
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    • pp.75-80
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    • 2012
  • $InSb$ films were fabricated by DC magnetron sputtering and the effects of deposition temperature, heat treatment, passivation from evaporation and multi-layered structure were investigated. Electron mobility and electron concentration were linearly increased with deposition temperature for as-deposited specimens. It was found that the mobilities depend on the grain size rather than the stoichiometry for the samples with very low mobilities. The mobilities largely increased for the specimens with evaporation passivation compared with those without passivation layer. The mobility also increased with the amount of indium deposition in the multi-layer structured $InSb$ films. It was found that the mobility increments in both cases are due to the matching of the stoichiometry in $InSb$ films. For the heat treated and passivated specimens, the mobilities increased with annealing time and the maximum mobility was measured as 1612 $cm^2$/Vs.

Thermal Analysis of a Cryochamber for an Infrared Detector Considering a Radiation Shield (적외선 검출기용 극저온 챔버에서 복사 차폐막을 고려한 열해석)

  • Kim Young-Min;Kang Byung-Ha
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.18 no.8
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    • pp.672-677
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    • 2006
  • The steady cooling characteristics of a cryochamber for infrared (IR) detector have been investigated analytically, considering radiation shields. The thermal modeling considers the conduction heat transfer through cold finger, the gaseous conduction due to out-gassing, and the radiation heat transfer. The cooling load of the cryochamber is obtained by using a fin equation. The results obtained indicate that the gaseous conduction plays an important role in determining the steady cooling load. The steady cooling load is increased as the gas pressure is increased. It is also found that the cooling load is substantially decreased with a radiation shield. The most thermal load of a cryochamber occurs through the cold finger.

Analysis for the Effect of EMI Shield Layers' Height on Circuit Function (EMI 차폐막의 높이가 회로의 기능에 미치는 영향 분석)

  • Kim, Hyeon-Woo;Woo, Jin-Ha;Jang, Se-Hyun;Chang, Tae-Soon;Lee, Won-Hui;Hur, Jung
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.19 no.6
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    • pp.57-63
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    • 2019
  • S-parameters were used to analyze the effect of the circuit according to the height of the EMI shield layers. Among the S-parameters, S11, S21, S22, and S31 were used as factors for determining the effect on the circuit function. Simulations were performed using shields made of Graphite and Ferrite, and the frequencies were run from 100 MHz to 1 GHz. As the height of the shield was increased, the value of S21 was getting closer to 0 dB. In addition, the SE value was confirmed to improve the shielding performance according to the thickness of the insulating layer only in a specific frequency band. Based on 800um with thickest silicon dioxide thickness, the FG structure averaged -1 dB in narrow frequency bands between 100 MHz and 300 MHz, showing better efficiency than GF with an average of -2 dB. Although GF structures do not show high efficiency, they exhibit average performance of -3 dB in frequency bands between 100 MHz and 1 GHz rather than FG structures that sway over a wide range. In other words, FG and GF structures have trade-off structures. Therefore, it should be noted that the appropriate structure is selected for use.