• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.4
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• pp.659-664
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• 2020

In this paper, we propose a silicon-based electro-optic (EO) modulator which can modulate a sign of a topological charge number l of |l|=1 orbital angular momentum (OAM) mode. The proposed EO modulator consists of position-dependent doped Si waveguide core and undoped SiO2, cladding, which enables control of the effective index and propagation loss of two OAM constitutive eigenmodes. The modulator functions as OAM mode maintaining waveguide at -0.33V and as topological charge sign inverter at 10V. The output OAM mode purity is calculated through electric field distribution, showing high purity of |l|>0.92 in both cases.

• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.509-514
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• 2003

Mach-Zehnder interferometric wavelength converters with monolithically integrated semiconductor optical amplifiers (SOA's) have been fabricated and characteristics of wavelength conversion at 10 Gb/s have been investigated for wavelength span of 40 nm. The devices have been achieved by using a butt-joint combination of buried ridge structure type SOA's and passive waveguides. In the integration, a new method has been applied that removes p+InP cladding layer leading to high propagation loss and forms simultaneously the current blocking and the cladding layer using undoped InP. The module packaging has been achieved by using a titled fiber array for effective coupling into the tilted waveguide in the wavelength converter. Using the module, wavelength conversion with power penalty lower than 1 ㏈ at 10 Gb/s has been demonstrated for wavelength span of 40 nm. In addition, it is show that the module can provide 2R (re-amplification, re-shaping) operation by demonstrating the conversion with the negative penalty.

• Korean Journal of Optics and Photonics
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• v.18 no.1
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• pp.50-55
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• 2007

Using the Selective Area Growth (SAG) technology of Metal Organic Chemical Vapor Deposition (MOCVD), we successfully integrated an active device and passive devices on the same substrate. In other words, we integrated a Semiconductor Optical Amplifier (SOA) as an active device and an S-bend waveguide and a Multi Mode Interference (MMI) waveguide as passive devices. The SOA is successfully integrated with passive devices on the same substrate. The Cross-Gain Modulation (XGM) characteristic of the integrated SOA and the loss of an MMI and an S-bend waveguide were measured. Measured XGM characteristics of the SOA showed an extinction ratio of 8.82 dB. The total loss of the MMI and S-bend waveguide was 18 dB.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.2
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• pp.337-343
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• 2007

Since three-dimensional (3D) images reconstructed in interval imaging technique are related to the resolution of elemental images, there has been a problem that ray information of elemental images increases largely in order to obtain high-resolution 3D images. In this paper, to overcome this problem, a new unidirectional integral imaging based on pinhole model is proposed. Proposed method provides a new type of unidirectional elemental images, which are simply obtained by magnifying single horizontal pixel line of each elemental image to the vertical size of lenslet using ray analysis based on pinhole model and used to display 3D images. In proposed method, reduction effect of the ray information of elemental images can be obtained by scarifying vortical parallax. Feasibility of the proposed scheme is experimentally demonstrated and its results are presented.

• Korean Journal of Optics and Photonics
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• v.19 no.6
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• pp.394-399
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• 2008

An integral imaging system enabling enhanced depth of field by incorporating a pair of liquid-crystal (LC) lens arrays was proposed and demonstrated. The lens arrays exhibit two different refractive indexes depending on the light polarization. The proposed LC lens array I and II were implemented by depositing a ZLI-4119 LC and an E-7 LC, respectively, on top of a lens-array substrate in glass. When the two LC lens arrays were aligned appropriately, a birefringence was obtained for a specific light polarization in such a way that the incoming light sees different refractive indexes for them. As a result, the focal length associated with the imaging system utilizing the LC lens arrays was adaptively varied, thereby enhancing the depth of field for the image reconstruction. We have theoretically analyzed the proposed integral imaging system with the $LightTools^{(R)}$ to confirm that the focal length could be adjusted with the help of the birefringent lens array. Finally the proposed imaging system successfully reconstructed the objects. The birefringent lens array employing the ZLI-4119 LC produced a real image with the focal length of 680 mm, while the other using the E-7 LC yielded a virtual image with the focal length of -29 mm.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.22-23
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• 2000

GaAs/AlGaAs나 InGaAs/InGaAsP와 같은 반도체 기판을 이용한 전계광학 광변조기는 LD나 SOA와 같은 광소자와 단일기판 집적이 가능하고 낮은 chirping과 높은 변조대역폭을 갖는 외부광변조기로서의 장점으로 인하여 마이크로파 대역의 초고속광통신소자로 각광을 받아왔다. 특히 진행파의 속도가 정합된 traveling-wave 전극 구조를 갖는 경우 변조대역폭은 30-400Hz에 달하고 있다$^{(1)}$ . 그러나 한편으로는 반도체의 전계광학계수(electro-Optic Coefficient)가 LiNbO$_3$에 비해 10분의 1정도로 작아 상대적으로 동작전압이 커지는 단점이 대두되며 실제 구동전압이 수십 V에 이르고 있다. 이런 단점을 극복하기 위하여 p-i-n 구조를 이용하여 전계 집속도를 높이는 방법이 제안되어 동작전압이 2 V/mm 정도까지 감소하였다$^{(2)}$ . 본 논문에서는 이와 같은 반도체 전계광학 광변조기에서의 소신호 및 대신호 광변조특성을 분석함으로써 보다 높은 변조대역폭과 보다 낮은 동작전압을 갖는 구조를 연구하였다. (중략)

• Korean Journal of Optics and Photonics
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• v.26 no.5
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• pp.269-274
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• 2015

In this paper we design the optical system for an integrated two-channel TO-type optical transmitter to apply the HDMI interface using the code V simulator. The proposed integrated two-channel optical transmitter has two VCSELs attached in parallel on an 8-pin TO-CAN package, on top of which is a lens filter block ($1mm{\times}2mm{\times}4mm$) composed of hemispherical lenses and WDM filters. Considering two-channel transmitters manufactured with wavelength combinations of 1060nm/1270nm and 1330nm/1550nm, we obtain the optimum value of the diameter of the hemispherical lens as 0.6 mm for both combinations, and the distances L between the lens filter block and ball lens as 1.7 mm and 2.0 mm for the 1060nm/1270nm and 1330nm/1550nm wavelength combinations, respectively. At this time, the focal length f0 of the lens filter blocks for wavelengths of 1060, 1270, 1330, and 1550 nm are 0.351, 0.354, 0.355, and 0.359 mm, respectively, and the focal lengths F of light passing through the lens filter block and ball lens are 0.62 mm for 1060nm/1270nm and 0.60-0.66 mm for 1330nm/1550nm wavelength combinations.

• Korean Journal of Optics and Photonics
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• v.9 no.5
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• pp.333-341
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• 1998

The novel integrated device, 1.55 ${\mu}{\textrm}{m}$ DR-LD(distrbuted reflector laser diode) integrated EA-MOD (electro-absorption modulator) as light source, is proposed to improve the device yield and its operational performances. This device can be easily fabricated by the selective MOVPE technique and its fabrication processes are almost the same as the reported 1.55 ${\mu}{\textrm}{m}$ DFB-LD(distributed feedback laser diode) integrated EA-MOD except the asymmetric gratings. The static and dynamic properties are investigated simultaneously by solving the transfer matrix method for light propagation, the time-dependent rate equation for carrier change and schr$\"{o}$dinger equation for QCSE (Quantum-Confined Stark Effect). The performances of the proposed device such as output power, chirp, and extinction ratio are compared with those of DFB-LD integrated EA-MOD. Under 10Gb/s NRZ modulation, we obtain that DR-LD integrated EA-MOD. is 30% higher in output power on the on-state, about 50% lower in chirp, and slightly larger in extinction ratio than DFB-LD integrated EA-MOD.-MOD.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.161.1-161.1
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• 2017

최근 OLED기술을 조명에 응용하고자 하는 연구가 급증되고 있다. 이는 유연하고, 대면적 확장이 가능하며, 다양한 형태 구현에 있어 장점이 존재하기에 차세대 감성조명으로써 주목을 받고 있다. 고효율의 OLED 조명을 위해서는 저저항/고유연의 투명전극 소재의 개발을 통해 전기적 손실을 최소화해야하고, 광추출층의 적용을 통해 내부에서 생성된 빛을 외부로 잘 방출시켜 광학적 손실을 최소화해야한다. 이를 위해 많은 다양한 투명전극에 대한 연구와 광추출을 위한 방법에 대한 연구가 진행이 되고 있고, 두 가지 효과를 한번에 얻을 수 있는 집적기판에 대한 수요가 높아지고 있다. 본 연구는 인쇄공정과 플라즈마 공정을 통해, 미세배선이 함몰된 집적 기판을 개발하여 저저항/고유연 투명전극을 구현하였고 기판상 나노구조체 형성을 통해 광추출 효율을 기존에 비해 20% 이상 향상시킬 수 있었다. 이러한 기판은 향후 대면적 OLED 조명에 응용이 가능할 것이라 전망한다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.8
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• pp.1659-1665
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• 2009

In this paper, we propose an implementation method of 3D image correlator using integral imaging technique. In the proposed method, elemental images of the reference and signal 3D objects are recorded by lenslet arrays and then reference and signal output plane images with high resolution are optically reconstructed on the output plane by displaying these elemental images into a display panel. Through cross-correlations between the reconstructed reference and the single plane images, 3D object recognition is performed. The proposed method can provide a precise 3D object recognition by using the high-resolution output plane images compared with the previous methods and implement all-optical structure for real-time 3D object recognition system. To show the feasibility of the proposed method, optical experiments are carried out and the results are presented.