• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.455-459
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• 2002

I have investigated the effects of annealing on a polymeric $\alpha-C_3N_{4.2}$ at high pressure and temperature in the presence of seeds of crystalline carbon nitride films prepared by a high voltage discharge plasma. The samples were evaluated by x-ray photoelectron spectroscopy (XPS), infrared spectroscopy, Auger electron spectroscopy and x-ray diffraction(XRD). Notably, XPS studies of the film composition before and after annealing demonstrate that the nitrogen composition in $\alpha-C_3N_{4.2}$ material initially containing more than 58% nitrogen decreases during the annealing process and reaches a common, stable composition of ~43%. XPS analysis also shows that the nitrogen composition in the annealed films without polymeric $\alpha-C_3N_{4.2}$ was reduced from 35% to 17%. Furthermore the concentration of the sp$^3$bonded phase increased with the increment of the annealing temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.641-646
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) substrate using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in the presence of a N$_2$ reactive gas. We calculated dielectric constant, $\varepsilon$$\_$s/, with a capacitance Schering bridge method. We investigated the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were increased drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and C=N bonds. The carbon nitride thin films were observed crystalline phase confirmed by x-ray diffraction data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.33-38
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• 2021

Using facing target magnetron sputtering (FTMS) with a graphite target source, carbon nitride thin films were deposited on silicon and glass substrates at different substrate temperatures to confirm the tribological, electrical, and structural properties of thin films. The substrate temperatures were room temperature, 150℃, and 300℃. The tribology and electrical properties of the carbon nitride thin films were measured as the substrate temperature increased, and a study on the relation between these results and structural properties was conducted. The results show that the increase in the substrate temperature during the fabrication of the carbon nitride thin films increased the hardness and elastic modulus values, the critical load value was increased, and the residual stress value was reduced. Moreover, the increase in the substrate temperature during thin-film deposition was attributed to the improvement in the electrical properties of carbon nitride thin film.

• Resources Recycling
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• v.25 no.5
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• pp.75-83
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• 2016

AlN powder was prepared by carbon reduction and subsequent nitridation method through the scale-up experiments of 0.7 ~ 1.5 kg per batch. AlN powder was synthesized using the mixture of $Al_2O_3$ powder and carbon black at $1,550{\sim}1,750^{\circ}C$ for 0.5 ~ 4 hours under nitrogen atmosphere (flow rate of nitrogen gas: $10{\sim}40{\ell}/min$) at $2.0{\times}10^{-1}Torr$. Experimental results showed that $1,700{\sim}1,750^{\circ}C$ for the reaction temperature, 3 hr for reaction time, and $40{\ell}/min$ for the flow rate of nitrogen gas were the optimal conditions. Also, in order to remove carbon in the synthesized AlN, the remained carbon was removed at $650{\sim}750^{\circ}C$ for 1 ~ 2 hr using horizontal tube furnace. The results showed that 1 : 3.2 mol ratio of $Al_2O_3$ to carbon black, reaction temperature of $750^{\circ}C$, reaction time of 2 hours, rotating speed of 1.5 rpm under atmosphere condition were the optimal conditions. Under these conditions, high-purity AlN powder over 99% could be prepared: carbon and oxygen contents of the AlN powder were 835 ppm and 0.77%, respectively.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.987-992
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• 2001

A refractory grade low-cost silicon nitride powder was chemically analyzed, purified, and gas pressure sintered with the sintering additives. As-received powder contained a significant amount of free-Si, 0.72 wt% of Fe, 0.5 wt% of al and 0.31 wt% of Ca. Oxygen and carbon contents of the powder were 3.3 wt% and 0.4 wt%, respectively, and it consisted of 96% of $\beta$-phase and 4% of $\alpha$-phase. After lowering the Fe content and nitriding treatment, the powder was sintered with 6 wt% yttria and 2 wt% alumina for 1 h between 1823 K and 2123 K in order to examine the sintering behavior. Fully dense samples were obtained by sintering at 2123k for 2h. For comparison, a commercially available high-grade powder was also sintered at the same time. The low-cost powder showed much slower densification rate than the high-grade powder. Fully dense sample prepared from the low-cost powder contained a number of coarse grains with a low aspect ratio, and its hardness, fracture toughness, flexural strength and thermal shock resistance were not as good as those of the sample prepared with the high-grade powder.

• Journal of the korean Society of Automotive Engineers
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• v.4 no.2
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• pp.35-46
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• 1982

This paper deals with residual stress characteristics of ion-nitrided metal which is primarilly concerned with the effects of added carbon content in gas atmosphere. A small optimal amount of carbon content in gas atmosphere increase compound layer thickness, as well as to increase diffusion layer thickness and hardness. The residual stress and deflection of the specimens was measured in various elevated temperature at the surface of ion-nitrided metal and the internal stress distribution was calculated. It is found that compressive residual stress at the compound layer is largest at the compound layer, and decreases as the depth from the surface increases.

• Proceedings of the Korean Environmental Sciences Society Conference
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• 2018.10a
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• pp.87-87
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• 2018

• Proceedings of the Korean Environmental Sciences Society Conference
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• 2018.10a
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• pp.78-78
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• 2018

• Composites Research
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• v.29 no.4
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• pp.156-160
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• 2016

Glassy carbon can be utilized in a variety of harsh environment due to exceptional thermal stability and chemically impermeability along with scalability and low electrical resistance. In this work, we studied effects of electron(e)-beam irradiation on thermoelectric properties of the glassy carbon film. E-beam irradiation triggered local crystallization and/or amorphization of glassy carbon thin films, which was determined by a Raman spectroscopy. The structural change by e-beam irradiation leads to the change in the doping level of the glassy carbon, which can be inferred from the change of a Seebeck coefficient and an electric conductivity. The optimal power factor we obtained for the irradiated glassy carbon film was ~200% higher than that of the non-irradiated sample.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2001.04a
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• pp.34-34
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• 2001

열CVD법에 의하여 아세틸렌 가스를 탄소 원으로 사용한 탄소 나노튜브의 성장거동을 조사하였다. 닉켈 분말의 직경을 15nm 내지 90nm 범위로 조정하여 기판 에 촉매로 배열하였다. 탄소 나노튜브는 질소, 수소, 알곤, 암모니아 등 여러가지의 가스 분위기에서 증착되었으며 이들 가스의 혼합 분위기가 탄소나 노튜브의 성장에 미치는 영향을 조사하였다. 증착은 대기압 압력하에서 85$0^{\circ}C$ 의 온도에서 이루어졌다. 순수한 질소 분위기에서는 탄소 나노튜브의 성장이 이루어지지 않고 두꺼운 탄소 층이 기판 위에 중착되었다. 이 조건에서는 탄소로 뒤덮혀진 닉켈 입자가 탄소 나노튜브 형성의 촉매 역할을 담당하지 못했다. 그러나 질소와 수소의 혼합분위기에서는 수소의 농도가 증가함에 따라 탄소 나노튜브의 성장이 증진되었다. 순수한 수소 분위기에서는 일정한 방향이 없이 꼬여진 탄소 나노튜브가 성장되었다. 탄소 나노튜브의 성장은 분위기 가스로 암모니아를 사용하였을 때 훨씬 더 증진되었다. 수직으로 배열된 탄소 나노튜료를 암모니아 분위기에서는 성장시킬 수 있었으나 암모니아와 같은 비율의 수소와 질소 가스의 혼합 분위기 하에서 는 탄소 나노튜브의 성장을 얻을 수 없었다. 이러한 결과를 여기에서는 닉켈 촉매의 표면에 과도하게 석출된 탄소의 촉매 passivation으로 설명하였다. 탄소 나노튜브의 증착을 위해서는 아세틸렌 가스의 분해율이 너무 과도하지 않게 즉 촉매의 표면이 과도한 탄소의 증착으로 수동태화 되지않도록 조절되어야 한다는 것이다. 이 연구결과는 분위기 가스의 조성이 탄소 나노튜브의 성장에 있어서 그 반웅 kinetics에 큰 영향을 미친다는 것을 잘 보여주고 있다. 또한 암모니아 분위기에서는 촉매 닉켈입자 표면에 질화물층이 형성되어 탄소 나노튜브의 성장에 영향을 미쳤다는 것도 알 수 있었다.며 실제 가공업체에서도 터짐 문제가 발견되지 않았다. 결론적으로 표면층의 인장강도가 패션/구부림에 가장 중요한 변수로 작용하며 어떠 한 형태로 표면층의 인장강도를 향상시킬 경우 침엽수 펄프는 재생펄프로 대체가 가능 할 것으로 판단된다.하는 통계기법 중의 하나인 주성분회귀분석을 실시하였다. 주성분 분석은 여러 개의 반응변수에 대하여 얻어진 다변량 자료의 다차원적인 변 수들을 축소, 요약하는 차원의 단순화와 더불어 서로 상관되어있는 반응변수들 상호간 의 복잡한 구조를 분석하는 기법이다. 본 발표에서는 공정 자료를 활용하여 인공신경망 과 주성분분석을 통해 공정 트러블의 발생에 영향 하는 인자들을 보다 현실적으로 추 정하고, 그 대책을 모색함으로써 이를 최소화할 수 있는 방안을 소개하고자 한다.금 빛 용사 둥과 같은 표면처리를 할 경우임의 소재 표면에 도금 및 용 사에 용이한 재료를 오버레이용접시킨 후 표면처리를 함으로써 보다 고품질의 표면층을 얻기위한 시도가 이루어지고 있다. 따라서 국내, 외의 오버레이 용접기술의 적용현황 및 대표적인 적용사례, 오버레이 용접기술 및 용접재료의 개발현황 둥을 중심으로 살펴봄으로서 아직 국내에서는 널리 알려지지 않은 본 기 술의 활용을 넓이고자 한다. within minimum time from beginning of the shutdown.및 12.36%, $101{\sim}200$일의 경우 12.78% 및 12.44%, 201일 이상의 경우 13.17% 및 11.30%로 201일 이상의 유기의 경우에만 대조구와 삭제 구간에 유의적인(p<0.05) 차이를 나타내었다.는 담수(淡水)에서 10%o의 해수(海水)로 이주된지 14일(日) 이후에 신장(腎臟)에서 수축된 것으로 나타났다. 30%o의 해수(海水)에 적응(適應)된 틸라피아의 평균 신사구체(腎絲球體)의 면적은 담수(淡水)에