• Journal of Powder Materials
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• v.15 no.6
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• pp.489-495
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• 2008

Colored tantalum oxy-nitride (TaON) and tantalum nitride ($Ta_{3}N_{5}$) were synthesized by ammonolysis. Oxygen deficient tantalum oxides ($TaO_{1.7}$) were produced by a titration process, using a tantalum chloride ($TaCl_5$) precursor. The stirring speed and the amount of $NH_{4}OH$ were important factors for controling the crystallinity of tantalum oxides. The high crystallinity of tantalum oxides improved the degree of nitridation which was related to the color value. Synthesized powders were characterized by XRD, SEM, TEM and Colorimeter.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.22.1-22.1
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• 2009

차세대 CMOS 공정에서 유전상수가 높은 게이트 절연막과 함께 게이트 전극이 관심을 끌고 있다. 게이트 전극은 전도도가 높아야 하고 p-MOS, n-MOS에 맞는 일함수를 가져야 하며 열적 특성이 안정해야 한다. 탄탈룸 계열 탄화물이나 질화물은 게이트 전극으로 관심을 끌고 있는 물질이며 이를 원자층 화학증착법으로 박막화 하는 공정이 관심을 끌고 있다. 원자층 화학공정에서는 전구체의 역할이 중요하며 이의 기상반응 메카니즘, 표면 반응 메카니즘을 제대로 이해해야 한다. 본 연구에서는 TBTDET (tert-butylimido tris-diethylamido tantalum) 전구체의 반응 메커니즘을 FTIR(Fourier Transform Infrared)을 이용해 진단하였다. 또한 수소, 암모니아, 메탄을 이용한 열화학 원자층 증착, 플라즈마 원자층 증착 공정을 수행하여 박막을 얻고 이들의 특성을 평가하였다. 각 공정에 따라 반응 메커니즘이 달라지고 박막의 조성이 달라지며 또한 박막의 물성도 달라진다. 특히 박막에 형성되는 TaC, TaN, Ta3N5, Ta2O5 (증착 후 산소의 유입에 의해 형성됨) 등의 조성이 공정에 따라 달라지며 박막의 물성도 달라진다. 반응메카니즘의 연구를 통해 각 공정에서 어떠한 조성의 박막이 얻어지는 지를 규명하였고 박막의 밀도에 따라 산소유입량이 어떻게 달라지는 지를 규명하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.82-82
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• 2015

원자층 단위의 정밀 제어가 가능한 원자층 증착법(Atomic Layer Deposition)은 반도체, 디스플레이, 에너지, MEMS 등 다양한 분야에서 점차 그 응용 범위를 확대하고 있다. 응용분야의 확대와 함께, 물질적 측면에서는 산화물 위주의 적용에서 나아가 금속층, 질화물 등 다양한 물질 개발로 이루어져 왔으며, 이는 precursor의 개발과 함께 공정적 측면에서 plasms를 이용한 plasma-enhanced atomic layer deposition (PEALD)의 개발과 함께 이루어져 왔다. 본 발표에서는 ALD 공정에서의 플라즈마의 활용에 대하여 논의하고, ALD 공정에서의 플라즈마 적용에 따른 영향을 살펴보았다.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.4
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• pp.17-23
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• 2002

The more productive and stable fabrication can be obtained by applying chemical mechanical polishing (CMP) process to shallow trench isolation (STI) structure in 0.18 $\mu\textrm{m}$ semiconductor device. However, STI-CMP process became more complex, and some kinds of defect such as nitride residue, tern oxide defect were seriously increased. Defects like nitride residue and silicon damage after STI-CMP process were discussed to accomplish its optimum process condition. In this paper, we studied how to reduce torn oxide defects and nitride residue after STI-CMP process. To understand its optimum process condition, We studied overall STI-related processes including trench depth, STI-fill thickness and post-CMP thickness. As an experimental result showed that as the STI-fill thickness becomes thinner, and trench depth gets deeper, more tern oxide were found in the CMP process. Also, we could conclude that low trench depth whereas high CMP thickness can cause nitride residue, and high trench depth and over-polishing can cause silicon damage.

• Journal of the Korean Ceramic Society
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• v.41 no.12 s.271
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• pp.907-914
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• 2004

The nitridation mechanism of Si by SHS at $Si-NaCl-NH_{4}Cl-NaN_3$ system was investigated in this work. It was revealed that NaCl as a diluent was helpful to the perfect nitridation reaction by retarding the growth of Si particle resulted from the melting of Si at the initial stage of the nitridation reaction. And $NH_{4}Cl\;and\;NaN_3$ formed NaCl through decomposition and combination, and the preheating of pellet was helpful to the nitridation reaction in this process. The main nitridation mechanism of this system was liquid-gas reaction. The optimum porosity of the pellet for the nitridation of ${\alpha}-Si_{3}N_4$ was $67-69\%$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.1-7
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• 2014

Aluminum nitride, which has outstanding properties such as high thermal conductivity and electrical resistivity, has been received a great attention as a substrate and packaging material of semiconductor devices. Since aluminum nitride has a high sintering temperature of 2173 K and its properties depends on the impurity level, it is necessary to synthesize high-purity and nano-sized aluminum nitride powders for the applications. In this research, we synthesized high purity aluminum nitride nanopowders from aluminum using RF induction thermal plasma system. Sheath gas (NH3) flow was controlled to establish the synthesis condition of high purity aluminum nitride nanopowders. The obtained aluminum nitride nanopowders were evaluated by XRD, SEM, TEM, BET, FTIR and N-O analysis.

• Applied Microscopy
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• v.29 no.2
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• pp.255-263
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• 1999

We have investigated the interfacial reactions in Co/Ti multilayer thin films prepared by DC Magnetron sputtering system. We observed that the amorphous Co-Ti phase formed by SSAR (Solid State Amorphization Reaction) upon annealing at $200^{\circ}C$. Upon annealing treatments at $300^{\circ}C\;and\;400^{\circ}C$, a crystalline phase of CoTi formed at the Co/Ti interface. The sheet resistance of Co/Ti multilayer thin film increased by the formation of the amorphous phase at the Co/Ti interface, which decreased by the formation of new crystalline compound CoTi.

• Journal of the Korean institute of surface engineering
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• v.34 no.3
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• pp.231-239
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• 2001

The structure and composition of Cr-nitrides formed on an electroplated hard Cr layer during an ionnitriding process was analyzed, and the growth kinetics of the Cr-nitrides was examined as a function of the ion-nitriding temperature and time in order to establish a computer simulation model prediction the growth behavior of the Cr-nitride layer. The Cr-nitrides formed during the ion-nitriding at $550~770^{\circ}C$ were composed of outer CrN and inner $Cr_2$N layers. A nitrogen diffusion model in the multi-layer based on fixed grid FDM (Finite Difference Method) was applied to simulate the growth kinetics of Cr-nitride layers. By measuring the thickness of each Cr-nitride layer as a function of the ion-nitriding temperature and time, the activation energy for growth of each Cr-nitride was determined; 82.26 KJ/mol for CrN and 83.36 Kj/mol for $Cr_2$N. Further, the nitrogen diffusion constant was determined in each layer; $9.70$\times$10^{-12}$ /$m^2$/s in CrN and $2.46$\times$10^{-12}$ $m^2$/s in $Cr_2$N. The simulation on the growth kinetics of Cr-nitride layers was in good agreements with the experimental results at 550~72$0^{\circ}C$.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.28 no.12
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• pp.1632-1639
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• 2004

Numerical calculation has been performed to investigate the transport phenomena in the horizontal reactor which has two different gas inlets for MOCVD(metalorganic chemical vapor deposition). The full elliptic governing equations for continuity, momentum, energy and chemical species are solved by using the commercial code FLUENT. It is investigated how thermal characteristics, reactor geometry, and the operating parameters affect flow fields, mass fraction of each reactants. The numerical simulations demonstrate that flow rate of each species, inlet geometry of the reactor, and its distance from the susceptor as well as the inclination of upper wall of reactor can be used effectively to optimize reactor performance. The commonly used idealized boundary conditions are also investigated to predict flow phenomena in the actual deposition system.

• Journal of the Korean Society for Heat Treatment
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• v.18 no.6
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• pp.383-393
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• 2005

본 고에서는 사출금형소재로 널리 사용되는 프리하든 강의 수명을 극대화 시킬 수 있는 열 표면처리 기술에 대해 소개하였다. 이러한 열 표면처리 기술 및 기술 적용시 고려해야할 점을 다시 정리해 보면, 제조하는 대상물을 고려한 최적 금형 재료의 선택 (표 1~3) 선택된 금형의 물성을 최적으로 구현할 수 있는 열처리 선택 (표 4) 금형의 사용 환경을 고려한 최적 열 표면처리 선택 (표 5) 질화 열처리에 의한 수명 향상 피로 수명이 중요한 경우 : 질화층 $100{\mu}m$이내 열간 내마모성, 크립저항성이 요구되는 경우 : 질화층 $300{\sim}400{\mu}m$ TiN, CrN 등 세라믹 코팅에 의한 성능 향상 내식성 중요시 CrN, DLC의 적용 내마모성 및 초저마찰계수의 구현 : 방향성 코팅, 나노구조화 금형의 국제경쟁력을 향상시키기 위해서는 고품위 금형 제조 기술이 필요하고 이를 위하여, 표면개질처리가 필수불가결하다는 것이다. 또한, 열 표면처리에는 각각의 특징이 있고, 적용 상황의 미묘한 차이에 따라 특성이 바뀌기 때문에 고품위, 품질 금형을 얻고자 하면 어느 때보다 사용자, 금형기술자, 열 열 표면처리 기술자들과의 협력이 요구된다.