• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.155-158
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• 2004

질산화 (SiON) 막은 메모리와 광통신 소자 제조를 위해 활발한 응용이 기대되는 중요한 재료이다. SiON막 증착특성에 관해서는 많은 연구보고가 있었으나, 식각특성에 대해서는 그 발표가 매우 미미하다. 이에 본 연구에서는 PECVD를 이용하여 증착한 SION 박막을 Ni 마스크를 이용하여 식각하였다. 공정변수에는 소스 전력, 바이어스 전력, 압력, 그리고 $C_2F_6$ 유량 등이며, 각 변수의 실험범위는 400-1000 W, 30-90 W, 6-12 mTorr, 그리고 30-80 sccm이다. 식각률은 소스전력의 증가에 따라 233 에서 444 nm/min으로 거의 선형적으로 증가하였다. 비슷한 경향성이 바이어스 전력의 증가에 따라 관찰되었다. 이는 식각률이 플라즈마 밀도와 이온충돌 에너지에 강하게 영향을 받고 있음을 의미한다. 6-10 mTorr의 압력범위와 30-50 sccm의 $C_2F_6$ 유량범위 내에서의 식각률의 변화는 매우 미미하였다. 그러나 고압 (12 mTorr)과 고 유량 (60 sccm)에서 식각률은 크게 상승하거나 감소하였다. 전체 실험범위에서 관측된 식각률의 범위는 233-444 nm/min이었다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1699-1705
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• 1989

Nitridation of about 300\ulcornerSiO2 filmss thermally grown on Si was performed in NH3 plasm ambient (0.2-2 torr) at 900\ulcornerC-1100\ulcorner for 15-20 minutes. The peoperties of those films have been investigated by analyzing the AES and the SIMS data, and the results of the I-V and the C-V measurements. At the plasma ambient of less than 1.5 torr pressure, etching of the films have been shown. Above the 1.5 torr pressure, however, SiO2 films were nitrided as SiIxNy. Plasma thermal nitridation of SiO2 by addition of small amount (6%) of CF4 to the NH3 showed higher pile-up N concentration in the surface region of SiOxNy film. The higher the nitridation temperature is and the longer the nitridation time is the larger the dielectric constant is. The plasma thermal nitridation of silicon dioxide on silicon causes the flat-band voltage shift based on the formation of the positive charge. The conduction mechanism for SiOxNy films could be elucidated by Fowler-Nordheim tnneling model. By SIMS analysis, surface of the film nitrided in plasma process has less contamination than that of the film nitrided in open-tube process.

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1150-1154
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• 2001

Silicon oxynitride (SiON) thick films using the core layer of silica optical waveguide have been deposited on Si wafer by PECVD at low temperature (32$0^{\circ}C$) were obtained by decomposition of appropriate mixture of (SiH$_4$+$N_2$O+$N_2$) gaseous mixtures under RF power and SiH$_4$/($N_2$O+$N_2$) ratio deposition condition. Prism coupler measurements show that the refractive indices of SiON layers range from 1.4663 to 1.5496. A high SiH$_4$/($N_2$O+$N_2$) of 0.33 and deposition power of 150 W leads to deposition rates of up to 8.67 ${\mu}{\textrm}{m}$/h. With decreasing SiH$_4$/($N_2$O+$N_2$) ratio, the SiON layer become smooth from 41$\AA$ to 6$\AA$.