• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.155-162
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• 2002

The sensing properties of carbon monooxide were investigated as a function of mixing ratio and the lamination structure of 3mol% ZnO-doped $SnO_2$ and 3mol% $SnO_2$-doped ZnO. The lamination structures were fabricared monolayer, double layer, and hetero layer of $SnO_2$, Zno, and theirs mixture composition using thick film process. There was no second phase by the reaction of $SnO_2$ and ZnO. The conductance was decreased by the addition of ZnO in $SnO_2$, but it was increased with the addition of $SnO_2$ in ZnO. The conductance was increased with temperature and the inlet of CO. There was no improvement of sensitivity in the structure of mono- and double-layer. The hetero-layer structure, however, of $SnO_2$ 3ZnO-ZnO $3SnO_2$ showed the higher resistivity and the highest sensitivity. Ohmic characteristics was confirmed by the linear properties for I-V measurements.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.135-140
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• 2011

By investigating photoluminescence (PL) spectra (20 K) of undoped and Be-doped p-type GaSb/GaAs epilayers, the origin has been analyzed by the change due to doping density. We have observed that the PL peak shifts to higher energy and the full-width half-maximum (FWHM) decreases with increasing the doping density below ${\sim}10^{17}cm^{-3}$, contrasted to shift to low energy and increasing FWHM above the density of ${\sim}10^{17}cm^{-3}$. From the variation of the integrated PL intensities of three peaks dissolved by Gaussian fit, it has been analyzed that, as the density increases, the $Be[Be_{Ga}]$ acceptor level (0.794 eV) reduces, whereas the intrinsic defect of $A[Ga_{Sb}]$ (0.778 eV) enhances together with a new $Be^*$ level (0.787 eV) locating between A and Be. We have discussed that it is due to coexistence of the Be acceptor level (${\Delta}E=16meV$) and the complex level (${\Delta}E=23meV$), $Be^*[Ga_{Sb}-Be_{Ga}]$combined by Be and A, in Be-doped p-GaSb, and that the level density of $Be[Be_{Ga}]$ may be reduced above ${\sim}10^{17}cm^{-3}$.

• The Journal of Engineering Geology
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• v.12 no.2
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• pp.215-234
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• 2002

Groundwater Dam is one of the reliable techniques to get huge amount of groundwater abstraction for municipal, agricultural, drinking, industrial water supply system. It can be a major technique to solve water shortage problems when it based on the sufficient watershed, proper topology, and adequate aquifer distribution and pollution control, Groundwater Dam had initiated its construction by RDC(former KARICO) in early eighties in Korea and 4 of it in total were added more until late eighty. However, this technique has shrunken its application due to gradually decreased yield rate after sever years of construction. After we studied several existing sites precisely, we concluded that the main reason of decreasing yield rate was come form engineering roughness on construction in early nineties. Theoretically, the technique itself seemed to be little detectives however, there were a little application in the fields in Korea. With the recent advance in engineering fields, those defects in construction would be no longer obstacle to construct underground wall and the technique could be a one of major ground water production technique in the future. It is essential to study following items thoroughly before select the appropriate site. The topography and the site of the underground wall, aquifer distribution, the specific technique for wall construction to block groundwater flow effectively and strict quality control during construction are critical. The surface and ground water monitoring data should be collected. Sustainability of the Groundwater Dam with huge groundwater abstraction in long term should be based on the long-term water balance analysis for each site. The water quality, environmental effect analysis and maintenance achedule should be also analyzed and planned in prior. It is suggested that the two consecutive underground wall in the coastal area to prevent seawater intrusion beneath a single wall.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.30-37
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• 1989

The PIN type a-SiC:H/a-Si:H heterojunction solar cells were fabricated by using the rf glow discharge decomposition of $SiH_4$ mixed with $CH_4,B_2,H_6\;and\;PH_3.$ The efficiency of the solar cell of the $SnO_2/ITO$ was higher than that of ITO transparent oxide layer by 1.5%. The P layer was prepared with the thickness of $100{\AA}$ and $CH_4/SiH_4$ ration of 5. The I layer has been deposited on the P layer and it is not pure intrinsic but near N type. So $SiH_4$ mixed with $B_2H_6$ of 0.3ppm was used to change this N type nature to intrinsic having the thickness of 5000${\AA}$. And consecutively, the N layer was deposited with t ethickness of $400{\AA}$ using $SiH_4/PH_3$ mixtures. The solar cell demonstrated 0.94V of $V_{oc'}$ 14.6mA/cm of $J_{sc}$ and 58.2% of FF, resulting the efficiency of 8.0%. To minimize loss by the reflection of light, $MgF_2$ layer was coated on the lgass and the efficiency was improved by 0.5%. Therefore, the solar cell indicated overall efficiency of 8.5%.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.7
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• pp.1777-1783
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• 2014

In this paper, we designed and fabricated a high-speed semiconductor sensor for use in power control devices and analyzed the characteristics with pulsed radiation tests. At first, radiation sensitive circular Si PIN diodes with various diameters(0.1 mm ~5.0 mm) were designed and fabricated using Si epitaxial wafer, which has a $42{\mu}m$ thick intrinsic layer. The reverse leakage current of the diode with a radius of 2 mm at a reverse bias of 30 V was about 20.4 nA. To investigate the characteristic responses of the developed diodes, the pulsed gamma-radiation tests were performed with the intensity of 4.88E8 rad(Si)/sec. From the test results showing that the output currents and the rising speeds have a linear relationship with the area of the sensors, we decided that the optimal condition took place at a 2 mm diameter. Next, for the selected 2 mm diodes, dose rate tests with a range of 2.47E8 rad(Si)/sec to 6.21E8 rad(Si)/sec were performed. From the results, which showed linear characteristics with the radiation intensity, a large amount of photocurrent over 60mA, and a high speed response under 350ns without saturation, we can conclude that the our developed PIN diode can be a good candidate for the sensor of power control devices.

• Journal of Sensor Science and Technology
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• v.7 no.6
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• pp.426-431
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• 1998

This paper describes electrochemical etch-stop characteristics in THAH/IPA/pyrazine solution. I-V curves of n- and p-type Si in THAH/IPA/pyrazine solution were obtained. OCP(Open Circuit Potential) and PP (Passivation Potential) of p-type Si were -1.2 V and 0.1 V, and of n-type Si were -1.3 V and -0.2 V, respectively. Both n- and p-type Si, etching rates were abruptly decreased at potentials anodic to the PP. The etch-stop characteristics in THAH/IPA/pyrazine solution were observed. Since accurate etching stop occurs at pn junction, Si diaphragms having thickness of epi-layer were fabricated. Etching rate is highest at optimum etching condition, TMAH 25wt.%/IPA 17vol.%/pyrazine 0.1g/100ml. thus the elapsed time of etch-stop was reduced.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.45 no.12
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• pp.1013-1020
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• 2017

In this study, the failure prediction of composite laminates under flexural loading is investigated. A FEA(finite element analysis) using 2D strain-based interactive failure theory. A pregressive failure analysis was applied to FEA for stiffness degradation with failure mode each layer. A three-point bending test based on the ASTM D790 are performed for cross-ply $[0/90]_8$ and quasi-isotropic $[0/{\pm}45/90]_{2s}$ laminated composites. The accuracy of the applied failure theory is verified with the experimental results and other failure criteria such as maximum strain, maximum stress and Tsai-Wu theories.

• Journal of Advanced Navigation Technology
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• v.4 no.1
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• pp.23-35
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• 2000

In this paper, the design for a PCS base station antenna which is using broadband method by a stacked structure has been studied. The sensitive parameters, such as the parasitic elements, the height of air layer between the upper and lower patch, and the variation of feed point, of the microstrip antenna that has stacked structure in a characteristics variation situation are classified and the characteristics has been investigated through the simulations. A designed antenna has following characters. Impedance bandwidth is Z57.5MHz(VSWR${\leq}$2), horizontal beamwidth is $64.1^{\circ}$, and gain is 14.7dBi. Therefore, it is confirmed the characteristics is good. In this paper, through the designing of a stacked microstrip antenna, we has investigated the availability for Korea PCS base station antenna.

• 한국지구물리탐사학회:학술대회논문집
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• 2005.05a
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• pp.59-64
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• 2005

Although experimental analysis for groundwater sample at wells located systematically are very effective to delineate seawater intrusion region at coastal area, this method is restricted in few wells and time. We have conducted electrical resistivity sounding at 30 points in the study areas to analyze the region of seawater intrusion and found the boundary between salt wedge and fresh water lens from the analysis results of geostatistical method using variogram for one-dimensional inversion results. The methodology adopted in this study would be useful for finding the seawater intrusion region and evaluating quantitatively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.1
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• pp.83-88
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• 2002

To increase the device linearities and the breakdown-voltages of FETs, $Al_{0.25}$G $a_{0.75}$As/I $n_{0.25}$G $a_{0.75}$As/A $l_{0.25}$G $a_{0.75}$As partially doped channel FET(DCFET) structures are proposed. The metal insulator-semiconductor(MIS) like structures show the high gate-drain breakdown voltage(-20V) and high linearities. We propose a partially doped channel structure to enhance the device linearity to the homogeneously doped channel structure. The physics of partially doped channel structure is investigated with 2D device simulation. The devices showed the small ripple of the current cut-off frequency and the power cut-off frequency over the wide bias range. bias range.