• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.03b
• /
• pp.6-6
• /
• 2010

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode (Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition temperature. The crystallinity of SBN thin films were increased with increase of deposition temperature in the temperature range of 100~400[$^{\circ}C$]. The surface roughness of deposition temperature($300^{\circ}C$) showed about 4.33[nm]. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.282-282
• /
• 2010

LED Device was designed of electronic circuits of electrical power part for used Pspice student version and used Infrared LED lamps of load part. LED was used Computerized Electronic Medical Infrared Thermographic Imaging System for body surface Investigation of variable Body thermal asymmetry. It was knowledge body thermal Asymmetry of body surface and quantity body surface of electromagnetic wave to inflow electrical power part.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.77-77
• /
• 2010

We used eddy current sensor for diagnosis of power line. The power line according to the cross section has 6~18 element wires. The corrosion of power line was made by sodium hydroxide. The corrosion time of power line was from 18 hours to 27 hours. We obtained physical characteristics from tensile and torsion tests of power line. The eddy current Characteristics of power line according to the corrosion appeared change of amplitude 200 ~ 800 mV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.291-291
• /
• 2010

The SBN ceramic thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at substrate temperature of 300[$^{\circ}C$]. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The crystallinity of SBN thin films were increased with increase of annealing temperature in the temperature range of 600~800[$^{\circ}C$]. the surface rougness showed about 20 [nm].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.03b
• /
• pp.7-7
• /
• 2010

The SBN thin films were deposited at substrate temperature of 300[$^{\circ}C$] on Pt-coated electrode (Pt/Ti/$SiO_2$/Si(100)) using RF sputtering method. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The dielectric constant(150) of SBN thin film was obtained by annealing temperature above 750[$^{\circ}C$]. The frequency dependence of dielectric loss showed a value within 0.03 in frequency ranges of 1~1000[kHz].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.8
• /
• pp.671-676
• /
• 2009

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition conditions. We investigated the effect of deposition condition on the surface morphology and dielectric properties of SBN thin films. The optimum of the rougness showed about 4.33 nm in 70/30 of Ar/$O_2$ ratio. The crystallinity and rougness of SBN thin films were increased with the increase of rf power. Also, Deposition rate of SBN thin films was about 4.17 nm/min in 70 W of rf power. The capacitance of SBN thin films were increased with the increase of Ar/$O_2$ ratio, rf power and deposition temperature respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.185-186
• /
• 2008

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/SiO2/Si) using RF sputtering method at various substrate temperature. The optimum conditions of RF power and Ar/O2 ratio were 60[W] and 70/30, respectively. The rougness showed about 4.33[nm]. Deposition rate of SBN thin films was about 4.17[nm/min]. The capacitance of SBN thin films were increased with the increase of substrate temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.213-214
• /
• 2008

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/SiO2/Si) using RF sputtering method at various substrate temperature. The optimum conditions of RF power and Ar/O2 ratio were 60[W] and 70/30, respectively. The crystallinity of SBN thin films were increased with increase of substrate temperature in the temperature range of 100~400[$^{\circ}C$]. The capacitance of SBN thin films were increased with the increase of substrate temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.7
• /
• pp.459-462
• /
• 2017

In this study, we design, model, and analyze a compound generator that combines the axial flux permanent magnet (AFPM,) and radial flux permanent magnet (RFPM), which is expected to increase power generation by allowing the magnets to be placed on the upper, lower, left, and right sides of the same-sized generator. Through the design, modelling, and analysis of AFPM and RFPM compound generators, the generator load evaluation results rated output of 500.25 W and efficiency of 87.60%, respectively, at a rated speed of 600 rpm. By employing this complex generation system,these findings are expected to contribute to the activation of a small power generation system.

• The Korean Journal of Rheology
• /
• v.3 no.2
• /
• pp.156-165
• /
• 1991

폴리비닐리덴플루오라이드 바이모프 외팔보(poly(vinylidene fluoride) bimorph cantilever beam)의 진동을 기술하는 수학적 모형을 세우고 실험으로 그모형의 타당성을 고 찰하였다. 여러 전압의 교류전류에 대해 여러 길이의 외팔보의 주파수응답을 측정하였고 여 러 전압의 직류전류에 대해 여러 길이의 외팔보의 처짐을 측정하였다. 실험으로부터 이 외 팔보의 진동은 점성감쇠보다는 구조감쇠로 기술하는 것이 더 타덩하고 외팔보가 전기장에 대해 damping factor가 일정해야 하나 각각의 normal mode에 대해 다른 damping factor로 수정하여 계산한이론치가 실험과 더 일치하였다. 공명주파수의 공명진폭을 예측할수 있고 넓은 입력주파수 영역에 대한 외팔보의 응답을 기술 할수 있으며 진동하는 외팔보는 모든위 치에서의 진폭을 기술할수 있다는 점에서 여기서의 모형은 Toda와 Smits의 모형들보다 우 수하다고 볼수 있다.