• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1624-1626
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• 1996

PoIyimide thin films fabricated at substrate temperature $20^{\circ}C$, $40^{\circ}C$and $70^{\circ}C$ by vapor deposition polymerization method were confirmed by FT-IR spectra. It is found that deposition rate decreas according as increasing substrate temperature. Defusion depth of evaporation Al at which thin films be used for an insulating films between layers of semiconductor were about $300{\AA}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.154-157
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• 1996

The thin films are fabricated by VDPM and its heat resistant characteristics are investigated using Thermogravimetry. About polyimide, there is a wide difference between 5% weight loss temperature of TG curve and 20,000hr. of life time by methode of ASTM D2307. Therefore, TGI can be obtained by thermogravimetric analysis of NEMA std. pub. NOREI-1974. The TGI was got 670, 674 and 585 at 20$^{\circ}C$, 40$^{\circ}C$ and 70$^{\circ}C$, respectively.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1552-1554
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• 1997

In this paper, thin films of PI were fabricated VDPM of dry processes which are easy to control the film's thickness and hard to pollute due to volatile solvents. From FT-IR, PAA thin films fabricated by VDP were changed to PI thin films by thermal curing. From AFM and ellipsometer experimental, the higher curing temperature is, the films thickness decreases and reflectance increases. Therefore, PI could be fabricated stable by increasing curing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.402-405
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• 1999

The Study of this paper is to establish the optimum fabricating condition of specimens using Vapor Deposition Polymerization Method which belongs to a mode of preparation of functional organic thin films with dry process and to develop thin film type humidity sensor which has good humidity sensitive Characteristics. Scanning electron microscopy Atomic force microscopy were used to analyze the characteristics of thin film and the basic structure of the humidity sensor is a parallel capacitor which consists of three layers of Al/PI/Al. The characteristics of fabricated samples were measured under various conditions and obtained linear characteristics in the range of 20∼80%RH independent of temperature change and low hysteresis characteristics.

• Polymer(Korea)
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• v.31 no.6
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• pp.469-473
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• 2007

In this study, oligo(3-methylthiothiophene) was synthesized from thiophene derivative according to the method of reductive coupling using palladium catalyst. For the preparation of monomer, 3-methylthiothiophene was first synthesized through the metal-halogen exchange reaction of 3-bromothiophene with n-butyllithiuim, and the corresponding 2,5-dibromo-3-methylthiothiophene was formed by bromination. Their synthesis and characterization were determined by $^1H-NMR$ and ATR analyses. Thermal stability of the oligothiophene was monitored by thermogravimetric analysis (TGA). Thermal evaporation of the oligo(3-methylthiothiophene) on the substrate was attempted for OTFT applications.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1171-1173
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• 1995

Polyimide thin films were fabricated through the vapor deposition polymerization method, and the structure and capacitance characteristics of them were investigated in detail. It was found that the chemical structure and uniformity of the film could be stabilized with curing. The peaks of $720cm^{-l},\;1380cm^{-1}\;and\;1780cm^{-1}$ show C=O stretch mode, C-N stretch mode and carbonyl stretch mode, and those of polyimide which cured over $300^{\circ}C$ were fixed. It was found that capacitance was changed in proportion to temperature.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1487-1489
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• 1998

In this paper, thin films of PI were fabricated VDPM of dry processes which are easy to control the film's thickness and hard to pollute due to volatile solvents. From FT-lR, PAA thin films fabricated by VDP were changed to PI thin films by thermal curing. From SEM, AFM and Ellipsometer experimental, as the higher curing temperatures the films thickness decreases and reflectance increases. Therefore, Pl could be fabricated stable by increasing curing temperature. The relative permitivity and dissipation loss factor were 3.7 and 0.008. Also, the resistivity was about $1.05{\times}10^{15}{\Omega}cm$ at $30^{\circ}C$.