• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.107-110
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• 2002

The optical memory devices of BST thin films to composite $(Ba_{0.7}\;Sr_{0.3})TiO_{3}$ using sol-gel method were fabricated by changing of the depositing layer number on $Pt/Ti/SiO_{2}/Si$ substrate. The structural properties of optical memory devices to be ferroelectric was investigated by fractal analysis and 3-dimension image processing. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was $2500[\AA]$, $3500[\AA]$ and $3800[\AA]$. BST thin films exhibited the most pronounced grain growth. The surface morphology image was roughness with coating numbers. The thin films increasing with coating numbers shows a more textured and complex configuration.